Functional Materials and Microdevices, 2nd Edition

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "D:Materials and Processing".

Deadline for manuscript submissions: 30 June 2025 | Viewed by 3388

Special Issue Editors


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Guest Editor
School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
Interests: thermoelectric; memristor; energy harvesting; sensors
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Guest Editor
School of Materials Science and Engineering, Henan Polytechnic University, Jiaozuo 454003, China
Interests: thermoelectric; energy harvesting and conversion; direct ink writing of 3D; radiative cooling
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Guest Editor
Key Laboratory of Applied Superconductivity and Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China
Interests: thermoelectric materials and devices; flexible electronics; low-dimension materials
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Guest Editor
Key Laboratory for Thin Film and Microfabrication of Ministry of Education, Shanghai, China
Interests: MEMS gas sensors; nanostructured sensing materials; chip-based in situ TEM characterization
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Special Issue Information

Dear Colleagues,

Functional materials play a crucial role in the development of advanced devices that have the potential to revolutionize various industries, including electronics, energy, healthcare, and environmental monitoring. These materials are designed to possess specific properties and functionalities that enable them to perform specific tasks or functions such as catalysis, thermoelectric, photoelectric, piezoelectric, ferroelectric, photothermal, and radiative cooling. They are typically engineered at the nanoscale level, allowing for precise control over their properties and performance. The development of functional materials and devices involves various approaches, including synthesis, fabrication, and characterization. Advancements in micro-nano manufacturing technologies enabled the fabrication of functional materials with tailored properties for advanced electronic devices, sensing, and monitoring. However, the development of high-performance functional materials and devices also presents several challenges, including cost, scalability, stability and reliability, toxicity, and environmental impact. Accordingly, this Special Issue seeks to showcase research papers and review articles that focus on functional materials and microdevices, encompassing a wide range of applications and technologies.

Dr. Zhenhua Wu
Dr. Erzhen Mu
Dr. Hongjing Shang
Dr. Ming Li
Guest Editors

Manuscript Submission Information

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Keywords

  • functional materials and characterizations
  • energy conversion and transport
  • nano-micro device
  • device modeling and simulation
  • sensors and actuators
  • 3D printing and MEMS technologies
  • machine learning and algorithm

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Related Special Issue

Published Papers (2 papers)

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Research

27 pages, 10127 KiB  
Article
Research on the Trajectory and Relative Speed of a Single-Sided Chemical Mechanical Polishing Machine
by Guoqing Ye and Zhenqiang Yao
Micromachines 2025, 16(4), 450; https://doi.org/10.3390/mi16040450 - 10 Apr 2025
Viewed by 337
Abstract
This study establishes a bidirectional kinematic analysis framework for single-sided chemical mechanical polishing systems through innovative coordinate transformation synergies (rotational and translational). To address three critical gaps in existing research, interaction dynamics for both pad–wafer and abrasive–wafer interfaces are systematically derived via 5-inch [...] Read more.
This study establishes a bidirectional kinematic analysis framework for single-sided chemical mechanical polishing systems through innovative coordinate transformation synergies (rotational and translational). To address three critical gaps in existing research, interaction dynamics for both pad–wafer and abrasive–wafer interfaces are systematically derived via 5-inch silicon wafers. Key advancements include (1) the development of closed-form trajectory equations for resolving multibody tribological interactions, (2) vector-based relative velocity quantification with 17 × 17 grid 3D visualization, and (3) first-principle parametric mapping of velocity nonuniformity (NUV = 0–0.42) across 0–80 rpm operational regimes. Numerical simulations reveal two fundamental regimes: near-unity rotational speed ratios (ωPC = [0.95, 1) and (1, 1.05]) generate optimal spiral trajectories that achieve 95% surface coverage, whereas integer multiples produce stable relative velocities (1.75 m/s at 60 rpm). Experimental validation demonstrated 0.3 μm/min removal rates with <1 μm nonuniformity under optimized conditions, which was attributable to velocity stabilization effects. The methodology exhibits inherent extensibility to high-speed operations (>80 rpm) and alternative polishing configurations through coordinate transformation adaptability. This work provides a systematic derivation protocol for abrasive trajectory analysis, a visualization paradigm for velocity optimization, and quantitative guidelines for precision process control—advancing beyond current empirical approaches in surface finishing technology. Full article
(This article belongs to the Special Issue Functional Materials and Microdevices, 2nd Edition)
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18 pages, 5900 KiB  
Article
Research on Deflection and Stress Analyses and the Improvement of the Removal Uniformity of Silicon in a Single-Sided Polishing Machine Under Pressure
by Guoqing Ye and Zhenqiang Yao
Micromachines 2025, 16(2), 198; https://doi.org/10.3390/mi16020198 - 8 Feb 2025
Cited by 1 | Viewed by 2879
Abstract
The chemical–mechanical polishing (CMP) of silicon wafers involves high-precision surface machining after double-sided lapping. Silicon wafers are subjected to chemical corrosion and mechanical removal under pressurized conditions. The multichip CMP process for 4~6-inch silicon wafers, such as those in MOSFETs (Metal Oxide Semiconductor [...] Read more.
The chemical–mechanical polishing (CMP) of silicon wafers involves high-precision surface machining after double-sided lapping. Silicon wafers are subjected to chemical corrosion and mechanical removal under pressurized conditions. The multichip CMP process for 4~6-inch silicon wafers, such as those in MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), IGBTs (Insulated-Gate Bipolar Transistors), and MEMS (Micro-Electromechanical System) field materials, is conducted to maintain multiple chips to improve efficiency and improve polish removal uniformity; that is, the detected TTV (total thickness variation) gradually increases from 10 μm to less than 3 μm. In this work, first, a mathematical model for calculating the small deflection of silicon wafers under pressure is established, and the limit values under two boundary conditions of fixed support and simple support are calculated. Moreover, the removal uniformity of the silicon wafers is improved by improving the uniformity of the wax-coated adhesion state and adjusting the boundary conditions to reflect a fixed support state. Then, the stress distribution of the silicon wafers under pressure is simulated, and the calculation methods for measuring the TTV of the silicon wafers and the uniformity measurement index are described. Stress distribution is changed by changing the size of the pressure ring to achieve the purpose of removing uniformity. This study provides a reference for improving the removal uniformity of multichip silicon wafer chemical–mechanical polishing. Full article
(This article belongs to the Special Issue Functional Materials and Microdevices, 2nd Edition)
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