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Thin Films: Growth and Characterization
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Thin Films: Growth and Characterization

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Chemistry".

Deadline for manuscript submissions: closed (20 April 2023) | Viewed by 9047

Special Issue Editors

Dr. Victor Leca

E-Mail Website1 Website2
Guest Editor
Department Extreme Light Infrastructure-Nuclear Physics (ELI-NP), Horia Hulubei National Institute for R&D in Physics and Nuclear Engineering, Bucharest, Romania
Interests: materials; thin films; X-ray diffraction; nanomaterials; nanostructured materials; material characteristics; XRD analysis; materials science; materials engineering; thin film deposition
Prof. Dr. Maria Dinescu

E-Mail Website
Guest Editor
INFLPR—National Institute for Laser, Plasma and Radiation Physics, Magurele, Romania
Interests: laser–matter interactions; functional thin films and heterostructures; coatings of biologically-active materials; matrix-assisted pulsed laser evaporation (MAPLE); pulsed laser deposition (PLD); laser-induced forward transfer (LIFT)
Special Issues, Collections and Topics in MDPI journals

Special Issue Information

Dear colleagues,

This Special Issue will bring together papers with topics in the field of thin films, more particularly on chemical and physical fabrication methods and technologies for thin film growth and their characterization. Aspects such as surface modifications of substrates used as templates will be also considered. Correlation between microstructural, morphological, and electrical properties will be emphasized based on techniques such as X-ray and electron diffraction, transmission electron microscopy, atomic force microscopy, X-ray, electron or positron spectroscopy, and electrical transport property measurements. A large spectrum of materials and structures are considered, such as semiconductors, superconductors, materials for spintronics, nitrides, ZnO, multiferroics, ferroelectrics, plasmonic materials, transparent conductors, superlattices, nanocrystals, polymers, carbon-based materials, and others. Companies are encouraged to present new products that can be used for any of the above topics.

Dr. Victor Leca
Prof. Dr. Maria Dinescu
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • thin films
  • growth
  • characterization
  • electrical properties
  • applications

Published Papers (5 papers)

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Research

20 pages, 4049 KiB  
Article
Nanoscale Control of Structure and Composition for Nanocrystalline Fe Thin Films Grown by Oblique Angle RF Sputtering
by Cristina C. Gheorghiu, Aurelia Ionescu, Maria-Iulia Zai, Decebal Iancu, Ion Burducea, Gihan Velisa, Bogdan S. Vasile, Adelina C. Ianculescu, Mariana Bobeica, Daniel Popa and Victor Leca
Materials 2022, 15(17), 6134; https://doi.org/10.3390/ma15176134 - 4 Sep 2022
Cited by 2 | Viewed by 1573
Abstract
The use of Fe films as multi-element targets in space radiation experiments with high-intensity ultrashort laser pulses requires a surface structure that can enhance the laser energy absorption on target, as well as a low concentration and uniform distribution of light element contaminants [...] Read more.
The use of Fe films as multi-element targets in space radiation experiments with high-intensity ultrashort laser pulses requires a surface structure that can enhance the laser energy absorption on target, as well as a low concentration and uniform distribution of light element contaminants within the films. In this paper, (110) preferred orientation nanocrystalline Fe thin films with controlled morphology and composition were grown on (100)-oriented Si substrates by oblique angle RF magnetron sputtering, at room temperature. The evolution of films key-parameters, crucial for space-like radiation experiments with organic material, such as nanostructure, morphology, topography, and elemental composition with varying RF source power, deposition pressure, and target to substrate distance is thoroughly discussed. A selection of complementary techniques was used in order to better understand this interdependence, namely X-ray Diffraction, Atomic Force Microscopy, Scanning and Transmission Electron Microscopy, Energy Dispersive X-ray Spectroscopy and Non-Rutherford Backscattering Spectroscopy. The films featured a nanocrystalline, tilted nanocolumn structure, with crystallite size in the (110)-growth direction in the 15–25 nm range, average island size in the 20–50 nm range, and the degree of polycrystallinity determined mainly by the shortest target-to-substrate distance (10 cm) and highest deposition pressure (10−2 mbar Ar). Oxygen concentration (as impurity) into the bulk of the films as low as 1 at. %, with uniform depth distribution, was achieved for the lowest deposition pressures of (1–3) × 10−3 mbar Ar, combined with highest used values for the RF source power of 125–150 W. The results show that the growth process of the Fe thin film is strongly dependent mainly on the deposition pressure, with the film morphology influenced by nucleation and growth kinetics. Due to better control of film topography and uniform distribution of oxygen, such films can be successfully used as free-standing targets for high repetition rate experiments with high power lasers to produce Fe ion beams with a broad energy spectrum. Full article
(This article belongs to the Special Issue Thin Films: Growth and Characterization)
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12 pages, 4313 KiB  
Article
Features of the Preparation and Luminescence of Langmuir-Blodgett Films Based on the Tb(III) Complex with 3-Methyl-1-phenyl-4-stearoylpyrazol-5-one and 2,2′-Bipyridine
by Julia Devterova, Kirill Kirillov, Anton Nikolaev, Michail Sokolov, Victor Shul’gin, Alexey Gusev, Victor Panyushkin and Wolfgang Linert
Materials 2022, 15(3), 1127; https://doi.org/10.3390/ma15031127 - 31 Jan 2022
Cited by 1 | Viewed by 1744
Abstract
In this study, we investigated the effect of terbium ions (Tb3+) on the subphases of the limiting area of the molecule for the complex compound (CC) TbL3∙bipy (where HL is 3-methyl-1-phenyl-4-stearoylpyrazol-5-one and bipy is 2,2′-bipyridine). We examined the Langmuir monolayer [...] Read more.
In this study, we investigated the effect of terbium ions (Tb3+) on the subphases of the limiting area of the molecule for the complex compound (CC) TbL3∙bipy (where HL is 3-methyl-1-phenyl-4-stearoylpyrazol-5-one and bipy is 2,2′-bipyridine). We examined the Langmuir monolayer and the change in the luminescence properties of TbL3∙bipy-based Langmuir-Blodgett films (LBFs). The analysis of the compression isotherms, infrared, and luminescence spectra of TbL3∙bipy LBFs was performed by varying the concentration of Tb3+ in the subphases. Our results demonstrate the partial dissociation of the CC at concentrations of C(Tb3+) < 5 × 10−4 M. Full article
(This article belongs to the Special Issue Thin Films: Growth and Characterization)
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11 pages, 2791 KiB  
Article
Ultrasmooth Organic Films Via Efficient Aggregation Suppression by a Low-Vacuum Physical Vapor Deposition
by Youngkwan Yoon, Jinho Lee, Seulgi Lee, Soyoung Kim and Hee Cheul Choi
Materials 2021, 14(23), 7247; https://doi.org/10.3390/ma14237247 - 27 Nov 2021
Viewed by 1476
Abstract
Organic thin films with smooth surfaces are mandated for high-performance organic electronic devices. Abrupt nucleation and aggregation during film formation are two main factors that forbid smooth surfaces. Here, we report a simple fast cooling (FC) adapted physical vapor deposition (FCPVD) method to [...] Read more.
Organic thin films with smooth surfaces are mandated for high-performance organic electronic devices. Abrupt nucleation and aggregation during film formation are two main factors that forbid smooth surfaces. Here, we report a simple fast cooling (FC) adapted physical vapor deposition (FCPVD) method to produce ultrasmooth organic thin films through effectively suppressing the aggregation of adsorbed molecules. We have found that thermal energy control is essential for the spread of molecules on a substrate by diffusion and it prohibits the unwanted nucleation of adsorbed molecules. FCPVD is employed for cooling the horizontal tube-type organic vapor deposition setup to effectively remove thermal energy applied to adsorbed molecules on a substrate. The organic thin films prepared using the FCPVD method have remarkably ultrasmooth surfaces with less than 0.4 nm root mean square (RMS) roughness on various substrates, even in a low vacuum, which is highly comparable to the ones prepared using conventional high-vacuum deposition methods. Our results provide a deeper understanding of the role of thermal energy employed to substrates during organic film growth using the PVD process and pave the way for cost-effective and high-performance organic devices. Full article
(This article belongs to the Special Issue Thin Films: Growth and Characterization)
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15 pages, 2776 KiB  
Article
Rubrene Thin Films with Viably Enhanced Charge Transport Fabricated by Cryo-Matrix-Assisted Laser Evaporation
by Rafał Jendrzejewski, Natalia Majewska, Sayani Majumdar, Mirosław Sawczak, Jacek Ryl and Gerard Śliwiński
Materials 2021, 14(16), 4413; https://doi.org/10.3390/ma14164413 - 6 Aug 2021
Cited by 1 | Viewed by 1717
Abstract
Among organic semiconductors, rubrene (RB; C42H28) is of rapidly growing interest for the development of organic and hybrid electronics due to exceptionally long spin diffusion length and carrier mobility up to 20 cm2V−1s−1 in [...] Read more.
Among organic semiconductors, rubrene (RB; C42H28) is of rapidly growing interest for the development of organic and hybrid electronics due to exceptionally long spin diffusion length and carrier mobility up to 20 cm2V−1s−1 in single crystals. However, the fabrication of RB thin films resembling properties of the bulk remains challenging, mainly because of the RB molecule’s twisted conformation. This hinders the formation of orthorhombic crystals with strong π–π interactions that support the band transport. In this work, RB films with a high crystalline content were fabricated by matrix-assisted laser evaporation and the associated structure, composition, and transport properties are investigated. Enhanced charge transport is ascribed to the crystalline content of the film. Spherulitic structures are observed on top of an amorphous RB layer formed in the initial deposition stage. In spherulites, orthorhombic crystals dominate, as confirmed by X-ray diffraction and the absorption and Raman spectra. Surprisingly, nanowires several microns in length are also detected. The desorption/ionization mass and X-ray photoelectron spectra consistently show minimal material decomposition and absence of RB peroxides. The observed carrier mobility up to 0.13 cm2V−1s−1, is close to the technologically accepted level, making these rubrene films attractive for spintronic and optoelectronic applications. Full article
(This article belongs to the Special Issue Thin Films: Growth and Characterization)
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12 pages, 2528 KiB  
Article
Effect of In-Incorporation and Annealing on CuxSe Thin Films
by Algimantas Ivanauskas, Remigijus Ivanauskas and Ingrida Ancutiene
Materials 2021, 14(14), 3810; https://doi.org/10.3390/ma14143810 - 8 Jul 2021
Cited by 6 | Viewed by 1690
Abstract
A study of indium-incorporated copper selenide thin-film deposition on a glass substrate using the successive ionic adsorption and reaction method (SILAR) and the resulting properties is presented. The films were formed using these steps: selenization in the solution of diseleniumtetrathionate acid, treatment with [...] Read more.
A study of indium-incorporated copper selenide thin-film deposition on a glass substrate using the successive ionic adsorption and reaction method (SILAR) and the resulting properties is presented. The films were formed using these steps: selenization in the solution of diseleniumtetrathionate acid, treatment with copper(II/I) ions, incorporation of indium(III), and annealing in an inert nitrogen atmosphere. The elemental and phasal composition, as well as the morphological and optical properties of obtained films were determined. X-ray diffraction data showed a mixture of various compounds: Se, Cu0.87Se, In2Se3, and CuInSe2. The obtained films had a dendritic structure, agglomerated and not well-defined grains, and a film thickness of ~90 μm. The band gap values of copper selenide were 1.28–1.30 eV and increased after indium-incorporation and annealing. The optical properties of the formed films correspond to the optical properties of copper selenide and indium selenide semiconductors. Full article
(This article belongs to the Special Issue Thin Films: Growth and Characterization)
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