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The 44th IMAPS Poland Conference
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The 44th IMAPS Poland Conference

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: closed (30 September 2021) | Viewed by 18278

Special Issue Editors

Prof. Dr. Balázs Illés

E-Mail Website
Guest Editor
Department of Electronics Technology, Budapest University of Technology and Economics, Budapest, Hungary
Interests: soldering; heat and mass transfer; reliability; metallurgy
Special Issues, Collections and Topics in MDPI journals
Dr. Skwarek Agata

E-Mail Website
Guest Editor
Łukasiewicz Research Network - Institite of Microeletronics and Photonics, Warszawa, Poland
Interests: surface mount technology; assmembly; ciruits integration; soldering methods; composite solder alloys

Special Issue Information

Dear Colleagues,

The International Microelectronics and Packaging Society (IMAPS) Poland Chapter Conference is one of the most significant conferences with an international range, bringing together students, scientists, and experts in the field of microelectronics from around the world. The conference represents a high level of invited papers and is annually supported by different JCR journals. Each year, the conference is organized by a different research institution that is a member of an IMAPS Poland Chapter, in various places in Poland. This year, the IMAPS Poland Conference is co-organized by Łukasiewicz Research Network and the Institute of Micorelectronics and Phototnics. The event will take place online due to the COVID-19 pandemic. The main themes of the conference are hybrid and semiconductor technologies, design methods and computer simulations, electronic materials and components, thick-film and thin-film technologies, sensors, packaging, thermal management, optoelectronics, and photovoltaics. The most important goals of the IMAPS Poland Conference are to provide a forum for knowledge development and exchange on microelectronics technology and to encourage researchers (especially early career researchers) to develop interest and engagement in the field of electrical engineering.

Prof. Dr. Balázs Illés
Dr. Skwarek Agata
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2600 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • microelectronics
  • packaging
  • semiconductors
  • sensors
  • photovoltaics

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Published Papers (6 papers)

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Research

16 pages, 10357 KiB  
Article
Optically Active TiO2:Er Thin Films Deposited by Magnetron Sputtering
by Anna Kot, Marta Radecka, Dominik Dorosz and Katarzyna Zakrzewska
Materials 2021, 14(15), 4085; https://doi.org/10.3390/ma14154085 - 22 Jul 2021
Cited by 12 | Viewed by 2588
Abstract
Titanium dioxide photoanodes for hydrogen generation suffer from a profound mismatch between the optical absorption of TiO2 and the solar spectrum. To solve the problem of low solar-to-chemical efficiency, optically active materials are proposed. In this work, TiO2 thin films containing [...] Read more.
Titanium dioxide photoanodes for hydrogen generation suffer from a profound mismatch between the optical absorption of TiO2 and the solar spectrum. To solve the problem of low solar-to-chemical efficiency, optically active materials are proposed. In this work, TiO2 thin films containing erbium were deposited by radio frequency RF magnetron sputtering under ultrahigh vacuum conditions UHV. Morphology, structural, optical and electronic properties were studied. TiO2:Er thin films are homogenous, with uniform distribution of Er ions and high transparency over the visible VIS range of the light spectrum. However, a profound 0.4 eV blue shift of the fundamental absorption edge with respect to undoped TiO2 was observed, which can be attributed either to the size effect due to amorphization of TiO2 host or to the onset of precipitation of Er2Ti2O7 nanocrystals. Near-infrared NIR to VIS up-conversion is demonstrated upon excitation at 980 nm, while strong green photoluminescence at 525 and 550 nm occurs upon photon absorption at 488 nm. Full article
(This article belongs to the Special Issue The 44th IMAPS Poland Conference)
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11 pages, 3338 KiB  
Article
Sintering, Microstructure, and Dielectric Properties of Copper Borates for High Frequency LTCC Applications
by Dorota Szwagierczak, Beata Synkiewicz-Musialska, Jan Kulawik and Norbert Pałka
Materials 2021, 14(14), 4017; https://doi.org/10.3390/ma14144017 - 18 Jul 2021
Cited by 8 | Viewed by 2457
Abstract
New ceramic materials based on two copper borates, CuB2O4 and Cu3B2O6, were prepared via solid state synthesis and sintering, and characterized as promising candidates for low dielectric permittivity substrates for very high frequency circuits. [...] Read more.
New ceramic materials based on two copper borates, CuB2O4 and Cu3B2O6, were prepared via solid state synthesis and sintering, and characterized as promising candidates for low dielectric permittivity substrates for very high frequency circuits. The sintering behavior, composition, microstructure, and dielectric properties of the ceramics were investigated using a heating microscope, X-ray diffractometry, scanning electron microscopy, energy dispersive spectroscopy, and terahertz time domain spectroscopy. The studies revealed a low dielectric permittivity of 5.1–6.7 and low dielectric loss in the frequency range 0.14–0.7 THz. The copper borate-based materials, owing to a low sintering temperature of 900–960 °C, are suitable for LTCC (low temperature cofired ceramics) applications. Full article
(This article belongs to the Special Issue The 44th IMAPS Poland Conference)
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10 pages, 4241 KiB  
Article
Towards Efficient Luminescent Solar Energy Concentrator Using Cuprorivaite Infrared Phosphor (CaCuSi4O10)—Effect of Dispersing Method on Photoluminescence Intensity
by Piotr Sobik, Olgierd Jeremiasz, Paweł Nowak, Agata Sala, Bartłomiej Pawłowski, Grażyna Kulesza-Matlak, Anna Sypień and Kazimierz Drabczyk
Materials 2021, 14(14), 3952; https://doi.org/10.3390/ma14143952 - 15 Jul 2021
Cited by 10 | Viewed by 2776
Abstract
Cuprorivaite, also known as Egyptian blue (EB), CaCuSi4O10, has been utilized as an important blue pigment for thousands of years. It shows a 430–800 nm broad excitation band and an intense 910–920 nm near-infrared (NIR) emission peak at room [...] Read more.
Cuprorivaite, also known as Egyptian blue (EB), CaCuSi4O10, has been utilized as an important blue pigment for thousands of years. It shows a 430–800 nm broad excitation band and an intense 910–920 nm near-infrared (NIR) emission peak at room temperature. The application that motivates the current research is for luminescent solar concentrator (LSC) usage. Current technology for this purpose relies on high near-infrared reflectance. This article addresses the investigation of the relationship between dispersing methods and photoluminescence (PL) intensity. Mechanical grinding methods investigated in the study were: horizontal bead mill, exfoliation and three-roll mill. The initial aim of the study was to verify if the proposed methods do not damage PL. To the surprise of the authors, three-roll mill treatment enhanced PL by nearly 50% without altering the morphology of the powder. An X-ray diffraction study suggested slight alterations in the crystal lattice. Full article
(This article belongs to the Special Issue The 44th IMAPS Poland Conference)
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16 pages, 14230 KiB  
Article
Properties of Metallic and Oxide Thin Films Based on Ti and Co Prepared by Magnetron Sputtering from Sintered Targets with Different Co-Content
by Damian Wojcieszak, Michał Mazur, Patrycja Pokora, Adriana Wrona, Katarzyna Bilewska, Wojciech Kijaszek, Tomasz Kotwica, Witold Posadowski and Jarosław Domaradzki
Materials 2021, 14(14), 3797; https://doi.org/10.3390/ma14143797 - 7 Jul 2021
Cited by 8 | Viewed by 2851
Abstract
In this work, selected properties of metallic and oxide thin films based on titanium and cobalt were described. Thin-film coatings were prepared using the magnetron sputtering method. The deposition was carried out from sintered targets with different Co-content (2 at.%, 12 at.% and [...] Read more.
In this work, selected properties of metallic and oxide thin films based on titanium and cobalt were described. Thin-film coatings were prepared using the magnetron sputtering method. The deposition was carried out from sintered targets with different Co-content (2 at.%, 12 at.% and 50 at.%). The relation between the Ti–Co target composition and the Co-content in the metallic and oxide films was examined. There was 15–20% more cobalt in the films than in the target. Moreover, the deposition rate under neutral conditions (in Ar plasma) was even 10-times higher compared to oxidizing Ar:O2 (70:30) plasma. A comprehensive analysis of the structural properties (performed with GIXRD and SEM) revealed the amorphous nature of (Ti,Co)Ox coatings, regardless of the cobalt content in the coating. The fine-grained, homogenous microstructure was observed, where cracks and voids were identified only for films with high Co-content. Optical studies have shown that these films were well transparent (60% ÷ 80%), and the amount of cobalt in the target from which they were sputtered had a significant impact on the decrease in the transparency level, the slight shift of the absorption edge position (from 279 nm to 289 nm) as well as the decrease in their optical band gap energy (from 3.13 eV to 1.71 eV). Electrical studies have shown that in (Ti,Co)Ox thin films, a unipolar memristive-like effect can be observed. The occurrence of such effects has not been reported so far in the case of TiO2 coatings with the addition of Co. Full article
(This article belongs to the Special Issue The 44th IMAPS Poland Conference)
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14 pages, 17722 KiB  
Article
TiO2@Cu2O n-n Type Heterostructures for Photochemistry
by Anita Trenczek-Zajac, Joanna Banas-Gac and Marta Radecka
Materials 2021, 14(13), 3725; https://doi.org/10.3390/ma14133725 - 2 Jul 2021
Cited by 13 | Viewed by 3488
Abstract
A TiO2@Cu2O semiconductor heterostructure with better photochemical response compared to TiO2 was obtained using an electrochemical deposition method of Cu2O on the surface of TiO2 nanotubes. The choice of 1D nanotubes was motivated by the [...] Read more.
A TiO2@Cu2O semiconductor heterostructure with better photochemical response compared to TiO2 was obtained using an electrochemical deposition method of Cu2O on the surface of TiO2 nanotubes. The choice of 1D nanotubes was motivated by the possibility of achieving fast charge transfer, which is considered best suited for photochemical applications. The morphology and structural properties of the obtained heterojunction were determined using standard methods —SEM and Raman spectroscopy. Analysis of photoelectrochemical properties showed that TiO2@Cu2O heterostructures exhibit better properties resulting from an interaction with sunlight than TiO2. A close relationship between the morphology of the heterostructures and their photoproperties was also demonstrated. Investigations representing a combination of photoelectrochemical cells for hydrogen production and photocatalysis—photoelectrocatalysis—were also carried out and confirmed the observations on the photoproperties of heterostructures. Analysis of the Mott–Schottky plots as well as photoelectrochemical measurements (Iph-V, Iph-t) showed that TiO2 as well as, unusually, Cu2O exhibit n-type conductivity. On this basis, a new energy diagram of the TiO2@Cu2O system was proposed. It was found that TiO2@Cu2O n-n type heterostructure prevents the processes of photocorrosion of copper(I) oxide contained in a TiO2-based heterostructure. Full article
(This article belongs to the Special Issue The 44th IMAPS Poland Conference)
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9 pages, 4685 KiB  
Article
Thermoelectric Properties of Cu2Se Synthesized by Hydrothermal Method and Densified by SPS Technique
by Paweł Nieroda, Anna Kusior, Juliusz Leszczyński, Paweł Rutkowski and Andrzej Koleżyński
Materials 2021, 14(13), 3650; https://doi.org/10.3390/ma14133650 - 30 Jun 2021
Cited by 21 | Viewed by 3067
Abstract
The aim of the work was to obtain copper (I) selenide Cu2Se material with excellent thermoelectric properties, synthesized using the hydrothermal method and densified by the spark plasma sintering (SPS) method. Chemical and phase composition studies were carried out by X-ray [...] Read more.
The aim of the work was to obtain copper (I) selenide Cu2Se material with excellent thermoelectric properties, synthesized using the hydrothermal method and densified by the spark plasma sintering (SPS) method. Chemical and phase composition studies were carried out by X-ray diffraction (XRD), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) methods. Measurements of thermoelectric transport properties, i.e., electrical conductivity, the Seebeck coefficient, and thermal conductivity in the temperature range from 300 to 965 K were carried out. Based on these results, the temperature dependence of the thermoelectric figure of merit ZT as a function of temperature was determined. The obtained, very high ZT parameter (ZT~1.75, T = 965 K) is one of the highest obtained so far for undoped Cu2Se. Full article
(This article belongs to the Special Issue The 44th IMAPS Poland Conference)
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