Special Issue "Semiconductor Nanowire Devices and Applications"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".

Deadline for manuscript submissions: 30 June 2020.

Special Issue Editors

Dr. Francesco Rossella
Website
Guest Editor
NEST, Scuola Normale Superuire and Istituto Nanoscienze-CNR, Piazza S Silvestro 12, I-56127 Pisa, Italy
Interests: III-V semiconductor nanowires; nanowire devices and applications; transport phenomena at the nanoscale
Prof. Giovanni Pennelli
Website
Guest Editor
Dipartimento di Ingegneria dell'Informazione, Università di Pisa, Via Caruso 16, I-56122 Pisa, Italy
Interests: Thermoelectric devices; silicon nanostructures for thermoelectricity; Silicon nanowire devices
Prof. Dr. Antonio Polimeni
Website
Guest Editor
Dipartimento di Fisica, Sapienza Università di Roma
Interests: nanostructured materials (quantum dots, nanowires, 2D crystals), optical properties, hydrogen in semiconductors, optoelectronic devices

Special Issue Information

Dear Colleagues,

This special issue of Materials focuses on semiconductor nanowires, hosting a manuscripts collection on different aspects of nanowire physics and technology.

The unique properties of nanowires, including large aspect ratio and surface area, strain relaxation allowing for uncharted material combinations, crystal phase engineering and facile quantum confinement, make these nanomaterials of rising interests for applications.

Semiconductor nanowires bear in fact enormous potential as building blocks for next generation devices in different fields including electronics, optoelectronics, energy harvesting and sensing at the nanoscale.
Nanowire researchers are invited to contribute with original research paper as well as review-style articles on technological and scientific aspects - both experimental and theoretical - of semiconductor nanowires.
Main topics include:

nanowire synthesis and growth modeling;
advanced microscopies/spectroscopies;
study of structure-properties relation;

phonon engineering;
electronic and optoelectronic devices;

gated devices based on nanowires;

transport phenomena;
sensing and chem-FETs.

Dr. Francesco Rossella
Prof. Giovanni Pennelli
Prof. Antonio Polimeni
Guest Editors

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Nanowire synthesis
  • Nanowire Growth modeling
  • Advanced spectroscopy and microscopy techniques
  • Structure-properties relation
  • Phonon engineering
  • Nanowire electronics and optoelectronics
  • gated devices based on nanowires
  • sensing applications
  • nanowire chem-FETs
  • nanowire-based hybrid systems

Published Papers (3 papers)

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Research

Open AccessArticle
Strong Modulations of Optical Reflectance in Tapered Core–Shell Nanowires
Materials 2019, 12(21), 3572; https://doi.org/10.3390/ma12213572 - 31 Oct 2019
Abstract
Random assemblies of vertically aligned core–shell GaAs–AlGaAs nanowires displayed an optical response dominated by strong oscillations of the reflected light as a function of the incident angle. In particular, angle-resolved specular reflectance measurements showed the occurrence of periodic modulations in the polarization-resolved spectra [...] Read more.
Random assemblies of vertically aligned core–shell GaAs–AlGaAs nanowires displayed an optical response dominated by strong oscillations of the reflected light as a function of the incident angle. In particular, angle-resolved specular reflectance measurements showed the occurrence of periodic modulations in the polarization-resolved spectra of reflected light for a surprisingly wide range of incident angles. Numerical simulations allowed for identifying the geometrical features of the core–shell nanowires leading to the observed oscillatory effects in terms of core and shell thickness as well as the tapering of the nanostructure. The present results indicate that randomly displaced ensembles of nanoscale heterostructures made of III–V semiconductors can operate as optical metamirrors, with potential for sensing applications. Full article
(This article belongs to the Special Issue Semiconductor Nanowire Devices and Applications)
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Open AccessArticle
3D Multi-Branched SnO2 Semiconductor Nanostructures as Optical Waveguides
Materials 2019, 12(19), 3148; https://doi.org/10.3390/ma12193148 - 26 Sep 2019
Abstract
Nanostructures with complex geometry have gathered interest recently due to some unusual and exotic properties associated with both their shape and material. 3D multi-branched SnO2 one-dimensional nanostructrures, characterized by a “node”—i.e., the location where two or more branches originate, are the ideal [...] Read more.
Nanostructures with complex geometry have gathered interest recently due to some unusual and exotic properties associated with both their shape and material. 3D multi-branched SnO2 one-dimensional nanostructrures, characterized by a “node”—i.e., the location where two or more branches originate, are the ideal platform to distribute signals of different natures. In this work, we study how this particular geometrical configuration affects light propagation when a light source (i.e., laser) is focused onto it. Combining scanning electron microscopy (SEM) and optical analysis along with Raman and Rayleigh scattering upon illumination, we were able to understand, in more detail, the mechanism behind the light-coupling occurring at the node. Our experimental findings show that multi-branched semiconductor 1D structures have great potential as optically active nanostructures with waveguiding properties, thus paving the way for their application as novel building blocks for optical communication networks. Full article
(This article belongs to the Special Issue Semiconductor Nanowire Devices and Applications)
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Open AccessArticle
Electrochemical Nanolithography on Silicon: An Easy and Scalable Method to Control Pore Formation at the Nanoscale
Materials 2019, 12(18), 2891; https://doi.org/10.3390/ma12182891 - 07 Sep 2019
Abstract
Lithography on a sub-100 nm scale is beyond the diffraction limits of standard optical lithography but is nonetheless a key step in many modern technological applications. At this length scale, there are several possible approaches that require either the preliminary surface deposition of [...] Read more.
Lithography on a sub-100 nm scale is beyond the diffraction limits of standard optical lithography but is nonetheless a key step in many modern technological applications. At this length scale, there are several possible approaches that require either the preliminary surface deposition of materials or the use of expensive and time-consuming techniques. In our approach, we demonstrate a simple process, easily scalable to large surfaces, where the surface patterning that controls pore formation on highly doped silicon wafers is obtained by an electrochemical process. This method joins the advantages of the low cost of an electrochemical approach with its immediate scalability to large wafers. Full article
(This article belongs to the Special Issue Semiconductor Nanowire Devices and Applications)
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Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

1. Strong Modulations of Optical Reflectance in Tapered Core-shell Nanowires

F. Floris1, L. Fornasari2, V. Bellani2, A. Marini3, F. Banfi4, D. Ercolani5, F. Beltram5, L. Sorba5 and F. Rossella5

 

1 Tyndall National Institute - University College Cork, Cork, Ireland

2 Dipartimento di Fisica, Università di Pavia, Pavia, Italy

3 Department of Physical and Chemical Sciences, University of L'Aquila, L'Aquila, Italy

4 Universitė de Lyon, Institut Lumière Matière (iLM), Université Lyon 1 and CNRS, Lyon, France

5 NEST, Scuola Normale Superiore and Istituto Nanoscienze-CNR, Pisa, Italy

 

Random assemblies of vertically aligned tapered core-shell nanowires display an optical response dominated by angular dependent oscillations of the reflected light. Angle-resolved specular reflectance measurements show the occurrence of periodic modulations in the polarization-resolved spectra of reflected light for a surprisingly wide range of incident angles. Numerical simulations allow us to identify the geometrical features of the core-shell nanowires leading to the observed oscillatory effects. Our results suggest that randomly displaced ensembles of nanoscale heterostructures made of III-V semiconductors can operate as optical metamirrors for sensing applications.

 

2. Large Collections of Silicon Nanowires for the Exploitation of Silicon as Thermoelectric Material


Giovanni Pennelli, Elisabetta Dimaggio
Dipartimento di Ingegneria dell’Informazione, Universita’ di Pisa
Via Caruso 16, I-56122, PISA, Italy

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