Metal Oxide Semiconductors for Gas Sensor Applications
A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".
Deadline for manuscript submissions: closed (31 December 2020) | Viewed by 13172
Special Issue Editor
Interests: nanomaterials; chemical sensors; semiconductors; surface; hybrid materials
Special Issues, Collections and Topics in MDPI journals
Special Issue Information
Dear Colleagues,
Semiconductor metal oxides (binary and complex) are key compounds for the development of sensitive materials for gas sensors, due to a unique set of properties, the most important of which are electrical conductivity and high reactivity of the surface in the interaction with the gas phase. Conductometric gas sensors based on metal oxides semiconductors (MOS) are promising for creation gas control devices because of their high sensitivity, low cost, and miniaturization capability. Even though the principle of operation of MOS sensors is simple, the mechanism of the sensor response formation is rather complex. It is currently agreed that the sensor response is determined by a combination of factors: Receptor function, transducer function, and utility factor. The receptor function is responsible for the recognition of the target gas molecule, the transducer function provides the conversion of the chemical changes on the metal oxide surface into electrical signal, and the utility factor is related to the possibility provided by the sensitive material for the diffusion of the target gas into the volume of the sensitive layer. Conscious change of these characteristics can be carried out on the basis of the knowledge about fundamental relationships between the reactivity of oxide compounds and their chemical composition, crystal structure, and electronic properties.
Today’s requirements for gas control devices, necessary in various areas of human life, pose new challenges for scientists working in the field of creating new gas sensitive materials. Depending on specific task, various sensor characteristics become the most significant: High sensitivity to low concentrations of target gases (when analyzing air quality in residential areas), weak signal dependence on variable air humidity (for environmental monitoring), high resistance to various chemical agents and high ambient temperature (in the analysis of flue gases and for automotive engines), low energy consumption (for mobile devices), etc. The key direction in developing the technology of gas sensors and multisensor systems is the design of new materials with preassigned characteristics by complicating the chemical composition (complex oxides, nanocomposites, organic-inorganic hybrids) and varying the microstructure dimensionality (1D, 2D, 3D).
Thus, you are invited to submit contributions devoted to the synthesis of gas sensitive MOS materials and their characterization in relation to specific gas sensor properties:
- Metal oxide materials for low-temperature gas sensors;
- Metal oxide materials for high-temperature gas sensors;
- Metal oxide materials for light-activated gas sensors;
- Complex oxide (spinel, perovskite) materials;
- Metal oxide-based nanocomposites;
- Metal oxide-based hybrid materials.
Prof. Dr. Marina N. Rumyantseva
Guest Editor
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Keywords
- binary metal oxide semiconductors
- complex metal oxide semiconductors
- nanocomposites
- organic-inorganic hybrids
- solid-gas interaction
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