Special Issue "Metal Oxide Semiconductors for Gas Sensor Applications"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Materials Physics".

Deadline for manuscript submissions: 31 December 2019.

Special Issue Editor

Prof. Dr. Marina N. Rumyantseva
E-Mail Website
Guest Editor
Chemistry Department, Moscow State University, Leninskie Gory 1-3, 119991 Moscow, Russia
Tel. +7(495)939-54-71
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Special Issue Information

Dear Colleagues,

Semiconductor metal oxides (binary and complex) are key compounds for the development of sensitive materials for gas sensors, due to a unique set of properties, the most important of which are electrical conductivity and high reactivity of the surface in the interaction with the gas phase. Conductometric gas sensors based on metal oxides semiconductors (MOS) are promising for creation gas control devices because of their high sensitivity, low cost, and miniaturization capability. Even though the principle of operation of MOS sensors is simple, the mechanism of the sensor response formation is rather complex. It is currently agreed that the sensor response is determined by a combination of factors: Receptor function, transducer function, and utility factor. The receptor function is responsible for the recognition of the target gas molecule, the transducer function provides the conversion of the chemical changes on the metal oxide surface into electrical signal, and the utility factor is related to the possibility provided by the sensitive material for the diffusion of the target gas into the volume of the sensitive layer. Conscious change of these characteristics can be carried out on the basis of the knowledge about fundamental relationships between the reactivity of oxide compounds and their chemical composition, crystal structure, and electronic properties.

Today’s requirements for gas control devices, necessary in various areas of human life, pose new challenges for scientists working in the field of creating new gas sensitive materials. Depending on specific task, various sensor characteristics become the most significant: High sensitivity to low concentrations of target gases (when analyzing air quality in residential areas), weak signal dependence on variable air humidity (for environmental monitoring), high resistance to various chemical agents and high ambient temperature (in the analysis of flue gases and for automotive engines), low energy consumption (for mobile devices), etc. The key direction in developing the technology of gas sensors and multisensor systems is the design of new materials with preassigned characteristics by complicating the chemical composition (complex oxides, nanocomposites, organic-inorganic hybrids) and varying the microstructure dimensionality (1D, 2D, 3D).

Thus, you are invited to submit contributions devoted to the synthesis of gas sensitive MOS materials and their characterization in relation to specific gas sensor properties:

  • Metal oxide materials for low-temperature gas sensors;
  • Metal oxide materials for high-temperature gas sensors;
  • Metal oxide materials for light-activated gas sensors;
  • Complex oxide (spinel, perovskite) materials;
  • Metal oxide-based nanocomposites;
  • Metal oxide-based hybrid materials.

Prof. Dr. Marina N. Rumyantseva
Guest Editor

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Keywords

  • binary metal oxide semiconductors
  • complex metal oxide semiconductors
  • nanocomposites
  • organic-inorganic hybrids
  • solid-gas interaction

Published Papers (3 papers)

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Research

Open AccessArticle
Nanocomposites SnO2/SiO2:SiO2 Impact on the Active Centers and Conductivity Mechanism
Materials 2019, 12(21), 3618; https://doi.org/10.3390/ma12213618 - 04 Nov 2019
Abstract
This paper is focused on the effect of the stabilizing component SiO2 on the type and concentration of active sites in SnO2/SiO2 nanocomposites compared with nanocrystalline SnO2. Previously, we found that SnO2/SiO2 nanocomposites show [...] Read more.
This paper is focused on the effect of the stabilizing component SiO2 on the type and concentration of active sites in SnO2/SiO2 nanocomposites compared with nanocrystalline SnO2. Previously, we found that SnO2/SiO2 nanocomposites show better sensor characteristics in CO detection (lower detection limit, higher sensor response, and shorter response time) compared to pure SnO2 in humid air conditions. Nanocomposites SnO2/SiO2 synthesized using the hydrothermal method were characterized by low temperature nitrogen adsorption, XRD, energy dispersive X-ray spectroscopy (EDX), thermo-programmed reduction with hydrogen (TPR-H2), IR-, and electron-paramagnetic resonance (EPR)-spectroscopy methods. The electrophysical properties of SnO2 and SnO2/SiO2 nanocomposites were studied depending on the oxygen partial pressure in the temperature range of 200–400 °C. The introduction of SiO2 results in an increase in the concentration of paramagnetic centers Sn3+ and the amount of surface hydroxyl groups and chemisorbed oxygen and leads to a decrease in the negative charge on chemisorbed oxygen species. The temperature dependences of the conductivity of SnO2 and SnO2/SiO2 nanocomposites are linearized in Mott coordinates, which may indicate the contribution of the hopping mechanism with a variable hopping distance over local states. Full article
(This article belongs to the Special Issue Metal Oxide Semiconductors for Gas Sensor Applications)
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Open AccessArticle
Nanocomposites SnO2/SiO2 for CO Gas Sensors: Microstructure and Reactivity in the Interaction with the Gas Phase
Materials 2019, 12(7), 1096; https://doi.org/10.3390/ma12071096 - 02 Apr 2019
Cited by 2
Abstract
Nanocomposites SnO2/SiO2 with a silicon content of [Si]/([Sn] + [Si]) = 3/86 mol.% were obtained by the hydrothermal method. The composition and microstructure of the samples were characterized by EDX, XRD, HRTEM and single-point Brunauer-Emmet-Teller (BET) methods. The surface sites [...] Read more.
Nanocomposites SnO2/SiO2 with a silicon content of [Si]/([Sn] + [Si]) = 3/86 mol.% were obtained by the hydrothermal method. The composition and microstructure of the samples were characterized by EDX, XRD, HRTEM and single-point Brunauer-Emmet-Teller (BET) methods. The surface sites were investigated using thermal analysis, FTIR and XPS. It is shown that the insertion of silicon dioxide up to the value of [Si]/([Sn] + [Si]) = 19 mol.% stabilizes the growth of SnO2 nanoparticles during high-temperature annealing, which makes it possible to obtain sensor materials operating stably at different temperature conditions. The sensor properties of SnO2 and SnO2/SiO2 nanocomposites were studied by in situ conductivity measurements in the presence of 10–200 ppm CO in dry and humid air in the temperature range of 150–400 °C. It was found that SnO2/SiO2 nanocomposites are more sensitive to CO in humid air as compared to pure SnO2, and the sample with silicon content [Si]/([Sn] + [Si]) = 13 mol.% is resistant to changes in relative air humidity (RH = 4%–65%) in the whole temperature range, which makes it a promising sensor material for detecting CO in real conditions. The results are discussed in terms of the changes in the composition of surface-active groups, which alters the reactivity of the obtained materials. Full article
(This article belongs to the Special Issue Metal Oxide Semiconductors for Gas Sensor Applications)
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Open AccessArticle
Metal Oxide Thin Films Prepared by Magnetron Sputtering Technology for Volatile Organic Compound Detection in the Microwave Frequency Range
Materials 2019, 12(6), 877; https://doi.org/10.3390/ma12060877 - 15 Mar 2019
Cited by 4
Abstract
Metal oxide thin films such as copper oxide, titanium dioxide, and tin dioxide deposited by magnetron sputtering technology were verified as a gas-sensitive layer in microwave-based gas sensors operated at 2.4 GHz. The developed gas sensors were tested at room temperature (23 °C) [...] Read more.
Metal oxide thin films such as copper oxide, titanium dioxide, and tin dioxide deposited by magnetron sputtering technology were verified as a gas-sensitive layer in microwave-based gas sensors operated at 2.4 GHz. The developed gas sensors were tested at room temperature (23 °C) and 50% relative humidity (RH) under exposure to 0–200 ppm of selected volatile organic compounds (acetone, ethanol, and methanol) that are of high interest in industry and biomedical applications. The highest responses to acetone were obtained for CuO-based gas sensors, to ethanol for SnO2-based gas sensors, while for methanol detection both dioxides, SnO2 and TiO2, exhibited good sensitivity. Full article
(This article belongs to the Special Issue Metal Oxide Semiconductors for Gas Sensor Applications)
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