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III-V Nanostructures and Their Devices

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".

Deadline for manuscript submissions: closed (31 December 2021) | Viewed by 3763

Special Issue Editors

Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China
Interests: nanoelectronic and optoelectronic devices based on semiconductor nanomaterials; characterization of nanostructure and nanodevices by electron microscopy; nanodevices based on III-V nanowires and nanosheets; nanodevices based on 2D semiconductor nanomaterials
Beijing Key Laboratory of Quantum Devices, Key Laboratory for the Physics and Chemistry of Nanodevices, and Department of Electronics, Peking University, Beijing 100871, China
Interests: solid state physics; semiconductor nanostructures and 2D materials; nanoelectronic and optoelectronic devices; quantum devices; spin physics and spintronics; Majorana fermions and topological states of matter; semiconductor-based qubits and quantum information science and technology

Special Issue Information

Dear Colleagues,

III-V materials, such as InAs, InSb and GaSb, have small bandgap and high carrier mobility. The electronic mobilities of InAs and InSb and hole mobility of GaSb are much higher than that of Si. These III-V materials have broad applications in nanoelectronic devices, optoelectronic devices, quantum devices and sensors. The bandgaps of InAs, InSb and GaSb are only 0.35 eV, 0.17 eV and 0.73 eV, respectively, which make these materials very promising in infrared photodetector. The bandgap of In1-xGaxAs1-ySby can be tuned by changing the values of x and y, and the heterojunction formed by two kinds of In1-xGaxAs1-ySby materials can have various energy band alignment. These heterojunctions have great potential in tunneling devices (such as tunneling diodes and tunneling field effect transistors TFET) and optoelectronic devices.

The synthesis of III-V nanostructures is the foundamental step for their applications.  Bottom-up growth methods can fabricate nanowires and nanosheets free of dislocation and strain. Several methods, including metal-organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE), have been developed to synthesis high quality III-V nanostructures, including nanowires, nanosheets, core-shell and axial heterostructured nanowires, and large-scale arrayed vertical nanowires.

Characterization is necessary to understand the structure and physical properties of nanomaterials. Advanced transmission electron microscopy (TEM) has been used to review the atomic-level structure of nanomaterials. In situ TEM and in situ scanning electron microscopy (SEM) have been developed to probe the structure–property relation. Fascinating properties have been revealed.

High-performance nanodevices have been demonstrated based on III-V nanostructures, including field effect transistor (FET), TFET and recently negative capacitance FET. Vertical gate-all-around FET arrays have been realized with outstanding performance. Optoelectronic devices, such as photodetectors, have been fabricated. Fascinating performances, including negative photoconductivity, have been reported.

Prof. Dr. Qing Chen
Prof. Dr. Hongqi Xu
Guest Editors

Manuscript Submission Information

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Keywords

  • III-V nanostructures
  • synthesis
  • characterization
  • electronic properties
  • optoelectronic properties
  • field effect transistors
  • tunneling field effect transistors
  • optoelectronic devices
  • quantum devices

Published Papers (2 papers)

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Research

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16 pages, 4871 KiB  
Article
Near-Infrared Artificial Optical Synapse Based on the P(VDF-TrFE)-Coated InAs Nanowire Field-Effect Transistor
by Rui Shen, Yifan Jiang, Zhiwei Li, Jiamin Tian, Shuo Li, Tong Li and Qing Chen
Materials 2022, 15(22), 8247; https://doi.org/10.3390/ma15228247 - 21 Nov 2022
Cited by 1 | Viewed by 1824
Abstract
Optical synapse is the basic component for optical neuromorphic computing and is attracting great attention, mainly due to its great potential in many fields, such as image recognition, artificial intelligence and artificial visual perception systems. However, optical synapse with infrared (IR) response has [...] Read more.
Optical synapse is the basic component for optical neuromorphic computing and is attracting great attention, mainly due to its great potential in many fields, such as image recognition, artificial intelligence and artificial visual perception systems. However, optical synapse with infrared (IR) response has rarely been reported. InAs nanowires (NWs) have a direct narrow bandgap and a large surface to volume ratio, making them a promising material for IR detection. Here, we demonstrate a near-infrared (NIR) (750 to 1550 nm) optical synapse for the first time based on a poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE))-coated InAs NW field-effect transistor (FET). The responsivity of the P(VDF-TrFE)-coated InAs NW FET reaches 839.3 A/W under 750 nm laser illumination, demonstrating the advantage of P(VDF-TrFE) coverage. The P(VDF-TrFE)-coated InAs NW device exhibits optical synaptic behaviors in response to NIR light pulses, including excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF) and a transformation from short-term plasticity (STP) to long-term plasticity (LTP). The working mechanism is attributed to the polarization effect in the ferroelectric P(VDF-TrFE) layer, which dominates the trapping and de-trapping characteristics of photogenerated holes. These findings have significant implications for the development of artificial neural networks. Full article
(This article belongs to the Special Issue III-V Nanostructures and Their Devices)
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Review

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24 pages, 90831 KiB  
Review
Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III–V Nanostructures
by Leilei Zhang, Xing Li, Shaobo Cheng and Chongxin Shan
Materials 2022, 15(5), 1917; https://doi.org/10.3390/ma15051917 - 04 Mar 2022
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Abstract
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship [...] Read more.
III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced. Full article
(This article belongs to the Special Issue III-V Nanostructures and Their Devices)
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