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2D Materials: Fundamentals and Applications

A Special Issue of Materials (ISSN 1996-1944) belonging to the section "Materials Physics".

Deadline for manuscript submissions: closed (20 August 2026) | Viewed by 327

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Guest Editor
Department of Physics and Astronomy, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 05006, Republic of Korea
Interests: nano materials; electronics devices; sensors; photodetectors

Special Issue Information

Dear Colleagues,

Two-dimensional (2D) materials have emerged as one of the most transformative classes of materials in modern science and technology due to their atomic-scale thickness, extraordinary physical properties, and broad application potential. Since the discovery of graphene, the 2D materials family has rapidly expanded to include transition metal dichalcogenides (TMDs), hexagonal boron nitride (h-BN), MXenes, black phosphorus, layered oxides, perovskites, and numerous emerging van der Waals crystals. These materials offer unique advantages such as high carrier mobility, tunable bandgaps, strong light–matter interaction, mechanical flexibility, and surface-dominated functionality, making them highly attractive for next-generation electronic, optoelectronic, photonic, energy, sensing, and quantum technologies.

This Special Issue aims to bring together cutting-edge research and comprehensive reviews that deepen our understanding of the fundamental physics and chemistry of 2D materials while highlighting their latest technological advancements. We invite contributions that explore synthesis and growth mechanisms, structural and electronic characterization, interface engineering, defect physics, heterostructure assembly, and theoretical insights. Submissions focusing on devices—including photodetectors, transistors, memristors, sensors, catalysts, batteries, and flexible/wearable systems—are highly welcomed.

By providing a platform for interdisciplinary discussion, this Special Issue seeks to accelerate the integration of 2D materials into practical applications and inspire innovative pathways for future research. We look forward to receiving high-quality manuscripts that showcase novel concepts, breakthrough discoveries, and emerging trends within the rapidly evolving landscape of 2D materials science.

Dr. Ghulam Dastgeer
Guest Editor

Manuscript Submission Information

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Keywords

  • two-dimensional materials
  • van der Waals materials
  • graphene and TMDs
  • 2D heterostructures
  • synthesis and characterization
  • electronic and optoelectronic devices
  • 2D semiconductor physics
  • flexible and wearable electronics
  • energy storage and catalysis
  • emerging applications of 2D materials

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Published Papers (1 paper)

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Research

25 pages, 2770 KB  
Article
Flexible h-BN/GaN Heterostructure Thin-Film Piezoelectric Sensors for Harsh Environments
by Yi Peng, Wenwang Wei, Zhi Hu, Xiaolan Huang, Jianzhi Bai, Xifeng Xie, Qunsong He, Yang Zhou, Bei Huang, Zonghua Zhang, Lili Ding, Qiu Zhong and Lingyun Liu
Materials 2026, 19(17), 3664; https://doi.org/10.3390/ma19173664 (registering DOI) - 28 Aug 2026
Abstract
Harsh-environment pressure sensing requires piezoelectric materials that can simultaneously withstand elevated temperature, mechanical loading, and structural degradation. GaN is a promising lead-free piezoelectric semiconductor owing to its wide bandgap, high thermal stability, and non-centrosymmetric wurtzite structure. However, its piezoelectric output can be significantly [...] Read more.
Harsh-environment pressure sensing requires piezoelectric materials that can simultaneously withstand elevated temperature, mechanical loading, and structural degradation. GaN is a promising lead-free piezoelectric semiconductor owing to its wide bandgap, high thermal stability, and non-centrosymmetric wurtzite structure. However, its piezoelectric output can be significantly affected by free-carrier compensation in unintentionally n-type GaN. Here, we report a flexible all-inorganic piezoelectric pressure sensor based on a directly grown h-BN/GaN heterostructure thin film. The h-BN layer was deposited on GaN/Si by plasma-enhanced chemical vapor deposition, followed by backside Si removal, electrode deposition, and transfer onto a flexible Cu foil substrate. Structural characterizations confirmed the formation of a compact h-BN/GaN interface with clear lattice fringes, preferential out-of-plane orientation, and characteristic Raman signatures of both h-BN and GaN. Compared with the flexible GaN/Cu reference, the h-BN/GaN device exhibits modified interfacial electrical transport behavior, enhanced voltage and current-density outputs, and prolonged transient voltage retention. Finite-element simulations reveal modified electrostatic potential distribution after h-BN integration, while electrical and interfacial characterizations suggest electronic structure modulation and reduced carrier compensation effects at the heterointerface. Raman optothermal analysis indicates an improved relative/local thermal response of the h-BN/GaN device under identical optical excitation conditions, supporting its enhanced thermal robustness. Under 200 psi at 400 °C, the h-BN/GaN sensor maintains an output voltage of approximately 27.65 mV, about 2.32 times that of the GaN reference. This work demonstrates an interfacial engineering strategy based on two-dimensional h-BN integration for constructing flexible, thermally robust, and high-output piezoelectric sensors for harsh-environment monitoring. Full article
(This article belongs to the Special Issue 2D Materials: Fundamentals and Applications)
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