Special Issue "Advances of Semiconductor Nanostructures"

A special issue of Materials (ISSN 1996-1944). This special issue belongs to the section "Advanced Nanomaterials and Nanotechnology".

Deadline for manuscript submissions: 30 June 2020.

Special Issue Editor

Prof. Dr. Anna Vilà
E-Mail Website
Guest Editor
Department of Electronic and Biomedical Engineering, University of Barcelona, 08028-Barcelona, Spain
Interests: electronic materials and devices, nanoscience, nanotechnology
Special Issues and Collections in MDPI journals

Special Issue Information

Dear Colleagues,

Since gate-all-around nanowire devices were combined with 3D integration, semiconductor nanostructures have promise to scale up the overall performance of electronics technology. Traditional scaling-down has allowed the construction of components and final chips with higher speed and density, lower power, increased functionality, etc. However, a change paradigm suggests that “More Moore” and “More Than Moore” will evolve towards novel strategies involving new materials, advanced devices, or higher-value nanosystems.

This Special Issue of Materials attempts to cover the recent advances in semiconductor nanostructures for logic and memory, sensors and actuators, biological and mechanical nanosystems, etc. 

Prof. Dr. Anna Vilà
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2000 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Nanomaterials, nanodevices, nanotechnologies
  • Logic and memory nanostructures
  • Nanosensors and nanoactuators
  • Nanobioapplications

Published Papers (2 papers)

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Research

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Open AccessArticle
Effect of pH in the Hydrothermal Preparation of Bi2WO6 Nanostructures
Materials 2019, 12(11), 1728; https://doi.org/10.3390/ma12111728 - 28 May 2019
Cited by 2
Abstract
In this study, Bi2WO6 was prepared by the hydrothermal method. The effects of reaction temperature (150/170/200 °C) and reaction time (6/12/24 h) were investigated. The role of strongly acidic pH (1 >) and the full range between 0.3 and 13.5 [...] Read more.
In this study, Bi2WO6 was prepared by the hydrothermal method. The effects of reaction temperature (150/170/200 °C) and reaction time (6/12/24 h) were investigated. The role of strongly acidic pH (1 >) and the full range between 0.3 and 13.5 were studied first. Every sample was studied by XRD and SEM; furthermore, the Bi2WO6 samples prepared at different temperatures were examined in detail by EDX and TEM, as well as FT-IR, Raman and UV-vis spectroscopies. It was found that changing the temperature and time slightly influenced the crystallinity and morphology of the products. The most crystallized product formed at 200 °C, 24 h. The pure, sheet-like Bi2WO6, prepared at 200 °C, 24 h, and 0.3 pH, gradually transformed into a mixture of Bi2WO6 and Bi3.84W0.16O6.24 with increasing pH. The nanosheets turned into a morphology of mixed shapes in the acidic range (fibers, sheets, irregular forms), and became homogenous cube- and octahedral-like shapes in the alkaline range. Their band gaps were calculated and were found to vary between 2.66 and 2.59 eV as the temperature increased. The specific surface area measurements revealed that reducing the temperature favors the formation of a larger surface area (35.8/26/21.6 m2/g belonging to 150/170/200 °C, respectively). Full article
(This article belongs to the Special Issue Advances of Semiconductor Nanostructures)
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Review

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Open AccessReview
Printed Electronics as Prepared by Inkjet Printing
Materials 2020, 13(3), 704; https://doi.org/10.3390/ma13030704 - 04 Feb 2020
Abstract
Inkjet printing has been used to produce a range of printed electronic devices, such as solar panels, sensors, and transistors. This article discusses inkjet printing and its employment in the field of printed electronics. First, printing as a field is introduced before focusing [...] Read more.
Inkjet printing has been used to produce a range of printed electronic devices, such as solar panels, sensors, and transistors. This article discusses inkjet printing and its employment in the field of printed electronics. First, printing as a field is introduced before focusing on inkjet printing. The materials that can be employed as inks are then introduced, leading to an overview of wetting, which explains the influences that determine print morphology. The article considers how the printing parameters can affect device performance and how one can account for these influences. The article concludes with a discussion on adhesion. The aim is to illustrate that the factors chosen in the fabrication process, such as dot spacing and sintering conditions, will influence the performance of the device. Full article
(This article belongs to the Special Issue Advances of Semiconductor Nanostructures)
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