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Special Issue "2D Materials for Advanced Devices"

A special issue of Materials (ISSN 1996-1944).

Deadline for manuscript submissions: 30 November 2019.

Special Issue Editor

Guest Editor
Dr. Rafik Addou

Oregon State University, Corvallis, OR, USA
Website | E-Mail
Interests: 2D crystals; advanced devices; integration challenges; interface and surface engineering

Special Issue Information

Dear Colleagues,

Since the isolation of the first single layer of graphite (graphene) and the revelation of its outstanding optical, electrical, and mechanical properties, increased interests have focused on all existing layered materials and in developing novel 2D nanomaterials. Two-dimensional materials are extensively used in various 2D/flexible technological applications such as nanoelectronics, optoelectronics, energy, composites, sensing, filtration, nanocoating, life science, and medicine. In the last few years, remarkable efforts have been made towards the growth of high-quality, atomically thin, and large domain films, as well as a realizing electronic grade 2D materials. Except for graphene, immature 2D materials requires tremendous work in making a substantial transition from reporting the fundamental properties and the experimental proof-of-concept (feasibility) to the technology development and validation.

The aim of this Special Issue, entitled “2D Materials for Advanced Devices”, is to offer the latest cutting-edge research and development of 2D technology. This issue seeks to publish recent advances in the synthesis of novel and high-quality 2D materials, device fabrication and testing, integration challenges solving, and surface and interface engineering. Both experimental and theoretical articles will be published in this Special Issue, focusing on the state-of-the-art of recent research on the engineering and developments of 2D materials for advanced devices such as graphene and related materials, hexagonal boron nitride, transition metal dichalcogenides, silicene, phosphorene, tellurene, topological insulators, oxides, nitrides, carbides, hydroxides, perovskites, MOFs, MXenes, etc.

As a renowned expert in the field of 2D nanomaterials, I would like to invite you to submit a manuscript to foster the “2D Materials for Advanced Devices Special Issue.

Dr. Rafik Addou
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All papers will be peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Materials is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 1800 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Graphene and its analogs (graphane, graphene oxide, fluorographene, etc.)
  • Monoelement 2D materials: silicene, germanene, borophene, phosphorene, arsenene, stanene, bismuthene, tellurene, etc.
  • 2D chalcogenides: WSe2, MoTe2, TaS2, GaTe, InSe, Sb2Te3, Bi2Se3, etc.
  • 2D oxides, carbides, and nitrides
  • 2D perovskites, hydroxides, MOFs, MAX phases, MXenes, metal halides, and other novel 2D materials.
  • 2D Materials engineering: surfaces, interfaces, heterostructures, alloying, passivation, functionalization, etching, 0D and 1D structures from 2D materials, 2D quantum wells, etc.
  • 2D advanced devices and applications
  • Physics and materials science at 2D limit

Published Papers (4 papers)

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Research

Open AccessArticle
New Findings on Multilayer Silicene on Si(111)√3×√3R30°–Ag Template
Materials 2019, 12(14), 2258; https://doi.org/10.3390/ma12142258
Received: 15 June 2019 / Revised: 8 July 2019 / Accepted: 11 July 2019 / Published: 13 July 2019
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Abstract
We report new findings on multilayer silicene grown on Si(111)√3 × √3 R30°–Ag template, after the recent first compelling experimental evidence of its synthesis. Low-energy electron diffraction, reflection high-energy electron diffraction, and energy-dispersive grazing incidence X-ray diffraction measurements were performed to show up [...] Read more.
We report new findings on multilayer silicene grown on Si(111)√3 × √3 R30°–Ag template, after the recent first compelling experimental evidence of its synthesis. Low-energy electron diffraction, reflection high-energy electron diffraction, and energy-dispersive grazing incidence X-ray diffraction measurements were performed to show up the fingerprints of √3 × √3 multilayer silicene. Angle-resolved photoemission spectroscopy displayed new features in the second surface Brillouin zone, attributed to the multilayer silicene on Si(111)√3 × √3 R30°–Ag. Band-structure dispersion theoretical calculations performed on a model of three honeycomb stacked layers, silicene grown on Si(111)√3 × √3 R30°-Ag surface confirm the experimental results. Full article
(This article belongs to the Special Issue 2D Materials for Advanced Devices)
Figures

Figure 1

Open AccessArticle
High-throughput Production of ZnO-MoS2-Graphene Heterostructures for Highly Efficient Photocatalytic Hydrogen Evolution
Materials 2019, 12(14), 2233; https://doi.org/10.3390/ma12142233
Received: 30 May 2019 / Revised: 1 July 2019 / Accepted: 8 July 2019 / Published: 11 July 2019
PDF Full-text (3400 KB) | HTML Full-text | XML Full-text | Supplementary Files
Abstract
High-throughput production of highly efficient photocatalysts for hydrogen evolution remains a considerable challenge for materials scientists. Here, we produced extremely uniform high-quality graphene and molybdenum disulfide (MoS2) nanoplatelets through the electrochemical-assisted liquid-phase exfoliation, out of which we subsequently fabricated MoS2 [...] Read more.
High-throughput production of highly efficient photocatalysts for hydrogen evolution remains a considerable challenge for materials scientists. Here, we produced extremely uniform high-quality graphene and molybdenum disulfide (MoS2) nanoplatelets through the electrochemical-assisted liquid-phase exfoliation, out of which we subsequently fabricated MoS2/graphene van der Waals heterostructures. Ultimately, zinc oxide (ZnO) nanoparticles were deposited into these two-dimensional heterostructures to produce an artificial ZnO/MoS2/graphene nanocomposite. This new composite experimentally exhibited an excellent photocatalytic efficiency in hydrogen evolution under the sunlight illumination ( λ > 400   n m ), owing to the extremely high electron mobilities in graphene nanoplatelets and the significant visible-light absorptions of MoS2. Moreover, due to the synergistic effects in MoS2 and graphene, the lifetime of excited carriers increased dramatically, which considerably improved the photocatalytic efficiency of the ZnO/MoS2/graphene heterostructure. We conclude that the novel artificial heterostructure presented here shows great potential for the high-efficient photocatalytic hydrogen generation and the high throughput production of visible-light photocatalysts for industrial applications. Full article
(This article belongs to the Special Issue 2D Materials for Advanced Devices)
Figures

Figure 1

Open AccessArticle
High Optical Response of Niobium-Doped WSe2-Layered Crystals
Materials 2019, 12(7), 1161; https://doi.org/10.3390/ma12071161
Received: 24 January 2019 / Revised: 2 April 2019 / Accepted: 9 April 2019 / Published: 10 April 2019
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Abstract
The optical properties of WSe2-layered crystals doped with 0.5% niobium (Nb) grown by the chemical vapor transport method were characterized by piezoreflectance (PzR), photoconductivity (PC) spectroscopy, frequency-dependent photocurrent, and time-resolved photoresponse. With the incorporation of 0.5% Nb, the WSe2 crystal [...] Read more.
The optical properties of WSe2-layered crystals doped with 0.5% niobium (Nb) grown by the chemical vapor transport method were characterized by piezoreflectance (PzR), photoconductivity (PC) spectroscopy, frequency-dependent photocurrent, and time-resolved photoresponse. With the incorporation of 0.5% Nb, the WSe2 crystal showed slight blue shifts in the near band edge excitonic transitions and exhibited strongly enhanced photoresponsivity. Frequency-dependent photocurrent and time-resolved photoresponse were measured to explore the kinetic decay processes of carriers. Our results show the potential application of layered crystals for photodetection devices based on Nb-doped WSe2-layered crystals. Full article
(This article belongs to the Special Issue 2D Materials for Advanced Devices)
Figures

Figure 1

Open AccessArticle
High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
Materials 2019, 12(7), 1056; https://doi.org/10.3390/ma12071056
Received: 7 March 2019 / Revised: 26 March 2019 / Accepted: 27 March 2019 / Published: 30 March 2019
PDF Full-text (1584 KB) | HTML Full-text | XML Full-text | Supplementary Files
Abstract
We report an excellent growth behavior of a high-κ dielectric on ReS2, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al2O3 thin film on the UV-Ozone pretreated surface of ReS2 yields [...] Read more.
We report an excellent growth behavior of a high-κ dielectric on ReS2, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al2O3 thin film on the UV-Ozone pretreated surface of ReS2 yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al2O3 thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al2O3 was achieved using a UV-Ozone pretreatment. The ReS2 substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S–O bonds presents an effective route for a uniform and conformal high-κ dielectric for advanced devices based on 2D materials. Full article
(This article belongs to the Special Issue 2D Materials for Advanced Devices)
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Graphical abstract

Planned Papers

The below list represents only planned manuscripts. Some of these manuscripts have not been received by the Editorial Office yet. Papers submitted to MDPI journals are subject to peer-review.

Author: Rafik Addou
Affiliation: Oregon State University, USA

Author:Stephen McDonnell
Affiliation:The University of Virginia

Author:Massimo V Fischetti
Affiliation:The University of Texas at Dallas

Author:Christopher Hinkle
Affiliation:The University of Texas at Dallas

Author:Chadwin D. Young
Affiliation:The University of Texas at Dallas

Author:Yu-Chuan Lin
Affiliation:Oak Ridge National Laboratory; Penn State University

Author:Santosh KC
Affiliation:Oak Ridge National Laboratory

Author:Lee Walsh
Affiliation:Wesleyan University

Author:William Vandenberghe
Affiliation:The University of Texas at Dallas

Author:Irene Paola De Padova
Affiliation: ISM - CNR - Rome, Italy

Author:Susan Fullerton
Affiliation:University of Pittsburgh

Author:Alan Seabaugh
Affiliation:University of Notre Dame

 

 

 

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