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Open AccessFeature PaperArticle

Electronic Transport Properties of Silicane Determined from First Principles

Department of Material science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA
Faculty of Electrical and Computer Engineering, Tarbiat Modares University, Tehran 1411713116, Iran
School of Electrical and Computer Engineering, University of Tehran, Tehran 14395-515, Iran
Author to whom correspondence should be addressed.
Materials 2019, 12(18), 2935;
Received: 8 August 2019 / Revised: 2 September 2019 / Accepted: 6 September 2019 / Published: 11 September 2019
(This article belongs to the Special Issue 2D Materials for Advanced Devices)
Silicane, a hydrogenated monolayer of hexagonal silicon, is a candidate material for future complementary metal-oxide-semiconductor technology. We determined the phonon-limited mobility and the velocity-field characteristics for electrons and holes in silicane from first principles, relying on density functional theory. Transport calculations were performed using a full-band Monte Carlo scheme. Scattering rates were determined from interpolated electron–phonon matrix elements determined from density functional perturbation theory. We found that the main source of scattering for electrons and holes was the ZA phonons. Different cut-off wavelengths ranging from 0.58 nm to 16 nm were used to study the possible suppression of the out-of-plane acoustic (ZA) phonons. The low-field mobility of electrons (holes) was obtained as 5 (10) cm2/(Vs) with a long wavelength ZA phonon cut-off of 16 nm. We showed that higher electron (hole) mobilities of 24 (101) cm2/(Vs) can be achieved with a cut-off wavelength of 4 nm, while completely suppressing ZA phonons results in an even higher electron (hole) mobility of 53 (109) cm2/(Vs). Velocity-field characteristics showed velocity saturation at 3 × 105 V/cm, and negative differential mobility was observed at larger fields. The silicane mobility was competitive with other two-dimensional materials, such as transition-metal dichalcogenides or phosphorene, predicted using similar full-band Monte Carlo calculations. Therefore, silicon in its most extremely scaled form remains a competitive material for future nanoscale transistor technology, provided scattering with out-of-plane acoustic phonons could be suppressed. View Full-Text
Keywords: silicane; phonon scattering; mobility; Monte Carlo; DFT; DFPT silicane; phonon scattering; mobility; Monte Carlo; DFT; DFPT
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Khatami, M.M.; Gaddemane, G.; Van de Put, M.L.; Fischetti, M.V.; Moravvej-Farshi, M.K.; Pourfath, M.; Vandenberghe, W.G. Electronic Transport Properties of Silicane Determined from First Principles. Materials 2019, 12, 2935.

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