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High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3

1
Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA
2
School of Chemical, Biological, and Environmental Engineering, Oregon State University, Corvallis, OR 93771, USA
3
Institute for Microelectronics and Microsystems, National Council for Research (IMM-CNR), Via Monteroni, ed. A3, 73100 Lecce, Italy
*
Author to whom correspondence should be addressed.
Materials 2019, 12(7), 1056; https://doi.org/10.3390/ma12071056
Received: 7 March 2019 / Revised: 26 March 2019 / Accepted: 27 March 2019 / Published: 30 March 2019
(This article belongs to the Special Issue 2D Materials for Advanced Devices)
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Abstract

We report an excellent growth behavior of a high-κ dielectric on ReS2, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al2O3 thin film on the UV-Ozone pretreated surface of ReS2 yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al2O3 thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al2O3 was achieved using a UV-Ozone pretreatment. The ReS2 substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S–O bonds presents an effective route for a uniform and conformal high-κ dielectric for advanced devices based on 2D materials. View Full-Text
Keywords: rhenium sulfide; atomic layer deposition; plasma-enhanced atomic layer deposition; X-ray photoelectron spectroscopy rhenium sulfide; atomic layer deposition; plasma-enhanced atomic layer deposition; X-ray photoelectron spectroscopy
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited (CC BY 4.0).

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Khosravi, A.; Addou, R.; Catalano, M.; Kim, J.; Wallace, R.M. High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3. Materials 2019, 12, 1056.

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