High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3
AbstractWe report an excellent growth behavior of a high-κ dielectric on ReS2, a two-dimensional (2D) transition metal dichalcogenide (TMD). The atomic layer deposition (ALD) of an Al2O3 thin film on the UV-Ozone pretreated surface of ReS2 yields a pinhole free and conformal growth. In-situ half-cycle X-ray photoelectron spectroscopy (XPS) was used to monitor the interfacial chemistry and ex-situ atomic force microscopy (AFM) was used to evaluate the surface morphology. A significant enhancement in the uniformity of the Al2O3 thin film was deposited via plasma-enhanced atomic layer deposition (PEALD), while pinhole free Al2O3 was achieved using a UV-Ozone pretreatment. The ReS2 substrate stays intact during all different experiments and processes without any formation of the Re oxide. This work demonstrates that a combination of the ALD process and the formation of weak S–O bonds presents an effective route for a uniform and conformal high-κ dielectric for advanced devices based on 2D materials. View Full-Text
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Khosravi, A.; Addou, R.; Catalano, M.; Kim, J.; Wallace, R.M. High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3. Materials 2019, 12, 1056.
Khosravi A, Addou R, Catalano M, Kim J, Wallace RM. High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3. Materials. 2019; 12(7):1056.Chicago/Turabian Style
Khosravi, Ava; Addou, Rafik; Catalano, Massimo; Kim, Jiyoung; Wallace, Robert M. 2019. "High-κ Dielectric on ReS2: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al2O3." Materials 12, no. 7: 1056.
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