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Electronics
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Power Amplifier for Wireless Communication
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Power Amplifier for Wireless Communication

A special issue of Electronics (ISSN 2079-9292). This special issue belongs to the section "Microwave and Wireless Communications".

Deadline for manuscript submissions: closed (31 December 2022) | Viewed by 17796

Special Issue Editor

Prof. Dr. Rocco Giofre

E-Mail Website
Guest Editor
Electronic Engineering Department, University of Roma Tor Vergata, 00133 Rome, Italy
Interests: RF and microwave power amplifiers; linear and nonlinear active microwave components, circuits, and subsystems, including MMICs and their combinations in more complex multi-functionals chips such as Single-Chip Front-End

Special Issue Information

Dear Colleagues,

Forthcoming Wireless Communication Systems aim to provide ubiquitous network access with higher and higher data rate and capacity to an unbelievable number of users. To be sustainable, this evolution has to be accompanied by an efficient management of the available power and spectrum resources at each level of the network infrastructure. In this challenge, the power amplifier (PA) will play a key role, being the dominant subsystem in every Radio Frequency (RF) transmitter.

The aim of this Special Issue is to gather technical papers focusing on research and development of PAs for wireless communication systems ranging from sub-6GHz to millimeter-wave and beyond. All technologies (e.g., GaN, Si, GaAs, BiCMOS) and approaches (e.g., hybrid, MMIC) are within the scope.

Topics of interest include but are not limited to the following:

  • Broadband PAs
  • High Efficiency PAs
  • Continuous Modes PAs (e.g., Class J)
  • PAs Architectures (e.g. Doherty, Envelope Tracking, Outphasing, LMBA etc.)
  • Distributed PAs
  • Design Methodologies for Linear and efficient PAs
  • Linearization Techniques

Prof. Dr. Rocco Giofre
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 100 words) can be sent to the Editorial Office for announcement on this website.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Electronics is an international peer-reviewed open access semimonthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2400 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • Power Amplifiers
  • GaN PAs
  • Doherty PA
  • High Efficiency
  • PAs Architectures
  • MMICs PAs
  • Linearization Techniques

Published Papers (6 papers)

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Research

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17 pages, 8513 KiB  
Article
Design-Aware Parasitic-Aware Simulation Based Automation and Optimization of Highly Linear RF CMOS Power Amplifiers
by Rana Aly Onsy, Mohamed El-Nozahi and Hani Ragai
Electronics 2023, 12(2), 272; https://doi.org/10.3390/electronics12020272 - 5 Jan 2023
Viewed by 1099
Abstract
In this paper, a parasitic-design-aware simulation-based design tool is proposed for highly linear RF power amplifiers. The main aim of the proposed tool is to speed up the design process of RF power amplifiers. In addition, it provides accurate final designs taking into [...] Read more.
In this paper, a parasitic-design-aware simulation-based design tool is proposed for highly linear RF power amplifiers. The main aim of the proposed tool is to speed up the design process of RF power amplifiers. In addition, it provides accurate final designs taking into consideration the effect of parasitic components of both active and passive devices. The proposed tool relies on the knowledge of designing highly linear RF power amplifiers. Both the optimization steps and design methodology are presented in this paper. The proposed tool is verified by designing a highly linear RF power amplifier at three different frequencies (7 GHz, 10 GHz, and 13 GHz) using 65 nm technology node. The results show that an OP1 dB higher than 18 dBm, gain/S21 higher than 7 dB, and OIP3 higher than 24 dBm at 6 dB back-off power can be obtained. Full article
(This article belongs to the Special Issue Power Amplifier for Wireless Communication)
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10 pages, 3473 KiB  
Article
Advances in Ku-Band GaN Single Chip Front End for Space SARs: From System Specifications to Technology Selection
by Francesco Scappaviva, Gianni Bosi, Andrea Biondi, Sara D’Angelo, Luca Cariani, Valeria Vadalà, Antonio Raffo, Davide Resca, Elisa Cipriani and Giorgio Vannini
Electronics 2022, 11(19), 2998; https://doi.org/10.3390/electronics11192998 - 21 Sep 2022
Cited by 4 | Viewed by 1963
Abstract
In this paper, a single-chip front-end (SCFE) operating in Ku-band (12–17 GHz) is presented. It is designed exploiting a GaN on SiC technology featured by 150 nm gate length provided by UMS foundry. This MMIC integrates high power and low noise amplification functions [...] Read more.
In this paper, a single-chip front-end (SCFE) operating in Ku-band (12–17 GHz) is presented. It is designed exploiting a GaN on SiC technology featured by 150 nm gate length provided by UMS foundry. This MMIC integrates high power and low noise amplification functions enabled by a single-pole double-throw (SPDT) switch, occupying a total area of 20 mm2. The transmitting chain (Tx) presents a 39 dBm output power, a power added efficiency (PAE) higher than 30% and a 22 dB power gain. The receive path (Rx) offers a low noise figure (NF) lower than 2.8 dB with 25 dB of linear gain. The Rx port output power leakage is limited on chip to be below 15 dBm even at high compression levels. Finally, a complete characterization of the SCFE in the Rx and Tx modes is presented, also showing the measurement of the recovery time in the presence of large-signal interferences. Full article
(This article belongs to the Special Issue Power Amplifier for Wireless Communication)
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20 pages, 11862 KiB  
Article
Broadband Millimeter-Wave 5G Power Amplifier Design in 22 nm CMOS FD-SOI and 40 nm GaN HEMT
by Jill Mayeda, Donald Y. C. Lie and Jerry Lopez
Electronics 2022, 11(5), 683; https://doi.org/10.3390/electronics11050683 - 23 Feb 2022
Cited by 7 | Viewed by 3465
Abstract
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of 24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are presented in this work. First, a single-ended broadband PA that employs a third-order input matching [...] Read more.
Three millimeter-wave (mm-Wave) power amplifiers (PAs) that cover the key 5G FR2 band of 24.25 to 43.5 GHz are designed in two different state-of-the-art device technologies and are presented in this work. First, a single-ended broadband PA that employs a third-order input matching network is designed in a 40 nm GaN/SiC HEMT (High Electron Mobility Transistor) technology. Good agreement between the measurement and post-layout parasitic extracted (PEX) electromagnetic (EM) simulation data is observed, and it achieves a measured 3-dB BW (bandwidth) of 18.0–40.3 GHz and >20% maximum PAE (power-added-efficiency) across the entire 20–44 GHz band. Expanding upon this measured design, a differential broadband GaN PA that utilizes neutralization capacitors is designed, laid out, and EM simulated. Simulation results indicate that this PA achieves 3-dB BW 20.1–44.3 GHz and maximum PAE > 23% across this range. Finally, a broadband mm-Wave differential CMOS PA using a cascode topology with RC feedback and neutralization capacitors is designed in a 22 nm FD-SOI (fully depleted silicon-on-insulator) CMOS technology. This PA achieves an outstanding measured 3-dB BW of 19.1–46.5 GHz and >12.5% maximum PAE across the entire frequency band. This CMOS PA as well as the single-ended GaN PA are tested with 256-QAM-modulated 5G NR signals with an instantaneous signal BW of 50/100/400/9 × 100 MHz at a PAPR (peak-to-average-power ratio) of 8 dB. The data exhibit impressive linearity vs. POUT trade-off and useful insights on CMOS vs. GaN PA linearity degradation against an increasing BW for potential mm-Wave 5G applications. Full article
(This article belongs to the Special Issue Power Amplifier for Wireless Communication)
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15 pages, 4661 KiB  
Article
Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets
by Maryam Sajedin, Issa Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, Monica Fernandez-Barciela and Manuel Violas
Electronics 2021, 10(17), 2131; https://doi.org/10.3390/electronics10172131 - 2 Sep 2021
Cited by 2 | Viewed by 2191
Abstract
This work develops a novel dynamic load modulation Power Amplifier (PA) circuity that can provide an optimum compromise between linearity and efficiency while covering multiple cellular frequency bands. Exploiting monolithic microwave integrated circuits (MMIC) technology, a fully integrated 1W Doherty PA architecture is [...] Read more.
This work develops a novel dynamic load modulation Power Amplifier (PA) circuity that can provide an optimum compromise between linearity and efficiency while covering multiple cellular frequency bands. Exploiting monolithic microwave integrated circuits (MMIC) technology, a fully integrated 1W Doherty PA architecture is proposed based on 0.1 μm AlGaAs/InGaAs Depletion-Mode (D-Mode) technology provided by the WIN Semiconductors foundry. The proposed wideband DPA incorporates the harmonic tuning Class-J mode of operation, which aims to engineer the voltage waveform via second harmonic capacitive load termination. Moreover, the applied post-matching technique not only reduces the impedance transformation ratio of the conventional DPA, but also restores its proper load modulation. The simulation results indicate that the monolithic drive load modulation PA at 4 V operation voltage delivers 44% PAE at the maximum output power of 30 dBm at the 1 dB compression point, and 34% power-added efficiency (PAE) at 6 dB power back-off (PBO). A power gain flatness of around 14 ± 0.5 dB was achieved over the frequency band of 23 GHz to 27 GHz. The compact MMIC load modulation technique developed for the 5G mobile handset occupies the die area of 3.2 mm2. Full article
(This article belongs to the Special Issue Power Amplifier for Wireless Communication)
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10 pages, 2835 KiB  
Article
A Large Signal Theory of Multiple Cascaded Bunching Cavities for High-Efficiency Triaxial Klystron Amplifier
by Fuxiang Yang, Fangchao Dang, Juntao He, Xiaoping Zhang and Jinchuan Ju
Electronics 2021, 10(11), 1284; https://doi.org/10.3390/electronics10111284 - 28 May 2021
Cited by 1 | Viewed by 1723
Abstract
This paper presents a large signal theory of multiple cascaded bunching cavities for the design of high-efficiency triaxial klystron amplifiers (TKAs). The theoretical analysis of multiple cascaded bunching cavities is presented, focusing on the relationship between gap voltage and first harmonic current and [...] Read more.
This paper presents a large signal theory of multiple cascaded bunching cavities for the design of high-efficiency triaxial klystron amplifiers (TKAs). The theoretical analysis of multiple cascaded bunching cavities is presented, focusing on the relationship between gap voltage and first harmonic current and velocity dispersion, which can exactly describe the clustering state of intense relativistic electron beams. The theoretical results of the first harmonic current and velocity dispersion are basically consistent with its simulation results, which can justify a high degree of confidence in the validity of that theory. This theory can predict the possibility of deep modulation of intense relativistic electron beams when the depth of the first harmonic current is about 150% by multiple cascaded bunching cavities. By properly accounting for this theory, we can design a Ku-band TKA with nearly 60% microwave conversion efficiency, which can provide theoretical and simulation guidance for the design of high-efficiency TKAs. More importantly, when we increase the electron beam voltage from 300 kV to 600 kV and keep the relativistic perveance constant, this device also can obtain more than 50% efficiency and 40 dB gain. As a result, we can design a Ku-band TKA with high average output power of about 1.5 GW, 52% efficiency and 46 dB gain. Full article
(This article belongs to the Special Issue Power Amplifier for Wireless Communication)
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Review

Jump to: Research

26 pages, 103977 KiB  
Review
Review of Ka-Band Power Amplifier
by Zhong Wang, Shanwen Hu, Ling Gu and Lujun Lin
Electronics 2022, 11(6), 942; https://doi.org/10.3390/electronics11060942 - 17 Mar 2022
Cited by 5 | Viewed by 5640
Abstract
With the increase in the demand for high-speed transmission communication, satellite communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is considered the mainstream frequency band of satellite communication. The performance of a power amplifier (PA) directly affects the power [...] Read more.
With the increase in the demand for high-speed transmission communication, satellite communication is developing rapidly. Because of the bandwidth capacity, the K/Ka band is considered the mainstream frequency band of satellite communication. The performance of a power amplifier (PA) directly affects the power of the transmitter, so the application of a power amplifier in Ka-band satellite communication is very important. A review of the state-of-the-art PA in the Ka band is presented in this article. The structure of the PA introduced includes common source, cascode, stacked field-effect transistor (FET), power combining, and Doherty PA, highlighting the advantages and disadvantages. The main solid-state technologies are outlined, including Si, SiGe, GaAs, and GaN, emphasizing Si complementary metal–oxide–semiconductor (CMOS) due to low price and high integration. Full article
(This article belongs to the Special Issue Power Amplifier for Wireless Communication)
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