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Article

Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets

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Instituto de Telecomunicações, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal
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Departamento de Electrónica, Telecomunicações e Informática, Universidade de Aveiro, 3810-193 Aveiro, Portugal
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Faculty of Engineering and Informatics, Bradford University, Bradford BD7 1DP, UK
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Faculty of Computing, Engineering and Science, University of South Wales, Pontypridd CF37 1DL, UK
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Information and Communication Department, Basrah University College of Science and Technology, Basrah 24001, Iraq
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AtlanTTic Research Center, Universidade de Vigo, 36310 Vigo, Spain
*
Authors to whom correspondence should be addressed.
Academic Editor: Soo Young Shin
Electronics 2021, 10(17), 2131; https://doi.org/10.3390/electronics10172131
Received: 30 June 2021 / Revised: 20 August 2021 / Accepted: 26 August 2021 / Published: 2 September 2021
(This article belongs to the Special Issue Power Amplifier for Wireless Communication)
This work develops a novel dynamic load modulation Power Amplifier (PA) circuity that can provide an optimum compromise between linearity and efficiency while covering multiple cellular frequency bands. Exploiting monolithic microwave integrated circuits (MMIC) technology, a fully integrated 1W Doherty PA architecture is proposed based on 0.1 μm AlGaAs/InGaAs Depletion-Mode (D-Mode) technology provided by the WIN Semiconductors foundry. The proposed wideband DPA incorporates the harmonic tuning Class-J mode of operation, which aims to engineer the voltage waveform via second harmonic capacitive load termination. Moreover, the applied post-matching technique not only reduces the impedance transformation ratio of the conventional DPA, but also restores its proper load modulation. The simulation results indicate that the monolithic drive load modulation PA at 4 V operation voltage delivers 44% PAE at the maximum output power of 30 dBm at the 1 dB compression point, and 34% power-added efficiency (PAE) at 6 dB power back-off (PBO). A power gain flatness of around 14 ± 0.5 dB was achieved over the frequency band of 23 GHz to 27 GHz. The compact MMIC load modulation technique developed for the 5G mobile handset occupies the die area of 3.2 mm2. View Full-Text
Keywords: MMIC; 5G; Doherty Power Amplifier; GaAs pHEMT; mobile handset MMIC; 5G; Doherty Power Amplifier; GaAs pHEMT; mobile handset
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MDPI and ACS Style

Sajedin, M.; Elfergani, I.; Rodriguez, J.; Abd-Alhameed, R.; Fernandez-Barciela, M.; Violas, M. Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets. Electronics 2021, 10, 2131. https://doi.org/10.3390/electronics10172131

AMA Style

Sajedin M, Elfergani I, Rodriguez J, Abd-Alhameed R, Fernandez-Barciela M, Violas M. Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets. Electronics. 2021; 10(17):2131. https://doi.org/10.3390/electronics10172131

Chicago/Turabian Style

Sajedin, Maryam, Issa Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, Monica Fernandez-Barciela, and Manuel Violas. 2021. "Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets" Electronics 10, no. 17: 2131. https://doi.org/10.3390/electronics10172131

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