Lab-on-a-Chip Devices and Systems for Microgravity Simulation and Aerospace Applications

A special issue of Aerospace (ISSN 2226-4310).

Deadline for manuscript submissions: closed (31 July 2024) | Viewed by 2151

Special Issue Editors


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Guest Editor
Center for Microelectromechanical Systems (CMEMS-UMinho), University of Minho, Campus de Azurém, 4800-058 Guimarães, Portugal
Interests: lab-on-a-chip; optical microdevices; integrated optics; sensors and actuators; spectrophotometry
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Special Issue Information

Dear Colleagues,

Lab-on-a-chip (LOC) microfluidic platforms involve miniaturized devices that integrate several laboratory functions, attaining prominence in numerous engineering and biotechnology fields such as medical diagnostics, environmental monitoring, and biochemical analysis. Thanks to the multi-functional and automated characteristics of LOCs, numerous opportunities for biomedical, biochemical, and pharmaceutical studies can be raised. Nevertheless, extending the applicability of LOCs to space requires novel microfluidic approaches, as well as the adaptation of common microfluidic technologies and the integration of robust and accurate transducers, both for actuation and sensing. In particular, the conditions of microgravity during space missions are known to impact biological processes as well as sensing mechanisms and life safety systems. Additionally, research in microgravity environments can help us study numerous chemical effects (such as material synthesis or polymerization), as well as the physiology of the human body and microorganisms, including applications in tissue engineering and drug discovery.

Thus, lab-on-a-chip technology is an attractive solution and holds significant potential for Earth-based microgravity simulation studies and aerospace applications, benefiting from advantages such as its low cost, controlled environment, and accessibility. Novel microfluidic miniaturized systems can contribute to a range of applications, from studying the effects of microgravity on biological systems to enhancing diagnostics and monitoring in space missions. Addressing the unique challenges associated with both microgravity simulation and aerospace environments is essential for realizing the full benefits of lab-on-a-chip technology in space exploration.

In this Special Issue, the editors invite and welcome submissions (review articles, original research papers, and brief communications) contributing to the latest advances, challenges, and perspectives in lab-on-a-chip devices and microsystems, materials, and MEMSs for aerospace applications. Both experimental and numerical studies may be considered. We hope to bring together researchers who are interested in the field of microdevices for aerospace applications and provide an opportunity to the engineering community to discuss and exchange knowledge.

This Special Issue aims to report research and progress in the following fields:

  • Microfluidics actuation and control systems;
  • Lab-on-a-chip for aerospace applications;
  • Nanomaterials for aerospace applications;
  • Microgravity numerical and experimental modeling;
  • Microphysiological systems for biomedical research in space;
  • Heat and mass transfer in microsystems for aerospace applications;
  • Modeling and simulation of microsystems for aerospace applications.

Dr. Susana Catarino
Dr. Diana Pinho
Dr. Rui A. Lima
Dr. Graça Minas
Guest Editors

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Keywords

  • microfluidics actuation
  • lab-on-a-chip
  • nanomaterials
  • microgravity
  • microsystems

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Published Papers (1 paper)

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Research

14 pages, 853 KiB  
Article
Damage Effects and Mechanisms of High-Power Microwaves on Double Heterojunction GaN HEMT
by Zhenyang Ma, Dexu Liu, Shun Yuan, Zhaobin Duan and Zhijun Wu
Aerospace 2024, 11(5), 346; https://doi.org/10.3390/aerospace11050346 - 26 Apr 2024
Viewed by 1577
Abstract
In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and compared. The breakdown characteristics and damage mechanisms of the two [...] Read more.
In this paper, simulation modeling was carried out using Sentaurus Technology Computer-Aided Design. Two types of high electron mobility transistors (HEMT), an AlGaN/GaN/AlGaN double heterojunction and AlGaN/GaN single heterojunction, were designed and compared. The breakdown characteristics and damage mechanisms of the two devices under the injection of high-power microwaves (HPM) were studied. The variation in current density and peak temperature inside the device was analyzed. The effect of Al components at different layers of the device on the breakdown of HEMTs is discussed. The effect and law of the power damage threshold versus pulse width when the device was subjected to HPM signals was verified. It was shown that the GaN HEMT was prone to thermal breakdown below the gate, near the carrier channels. A moderate increase in the Al component can effectively increased the breakdown voltage of the device. Compared with the single heterojunction, the double heterojunction HEMT devices were more sensitive to Al components. The high domain-limiting characteristics effectively inhibited the overflow of channel electrons into the buffer layer, which in turn regulated the current density inside the device and improved the temperature distribution. The leakage current was reduced and the device switching characteristics and breakdown voltage were improved. Moreover, the double heterojunction device had little effect on HPM power damage and high damage resistance. Therefore, a theoretical foundation is proposed in this paper, indicating that double heterojunction devices are more stable compared to single heterojunction devices and are more suitable for applications in aviation equipment operating in high-frequency and high-voltage environments. In addition, double heterojunction GaN devices have higher radiation resistance than SiC devices of the same generation. Full article
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