The Electronics Editorial Office retracts the article “Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study” [], cited above.
Following publication, the authors contacted the Editorial Office regarding errors identified in the simulation model and analysis presented in the article [].
Adhering to our standard procedure, an investigation was conducted by the Editorial Board that confirmed that the simulation presented in this paper is incorrect due to the use of incorrect material parameters: Silicon Carbide (SiC) parameters were used, instead of Silicon (Si). Consequently, the conclusions drawn from this simulation are invalid and cannot be relied upon. As a result, the Editorial Office, Editorial Board, and the authors have concluded that this error undermines the validity and accuracy of the findings, and have decided to retract this article [] as per MDPI’s retraction policy (https://www.mdpi.com/ethics#_bookmark30).
This retraction was approved by the Editor-in-Chief of the journal Electronics.
The authors agree to this retraction.
Reference
- Zhang, J.; Luo, H.; Wu, H.; Zheng, B.; Chen, X.; Zhang, G.; French, P.; Wang, S. RETRACTED: Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study. Electronics 2024, 13, 2347. [Google Scholar] [CrossRef]
Disclaimer/Publisher’s Note: The statements, opinions and data contained in all publications are solely those of the individual author(s) and contributor(s) and not of MDPI and/or the editor(s). MDPI and/or the editor(s) disclaim responsibility for any injury to people or property resulting from any ideas, methods, instructions or products referred to in the content. |
© 2025 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).