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Journal: Electronics, 2023
Volume: 12
Number: 598

Article: Charge Transport Mechanism in the Forming-Free Memristor Based on PECVD Silicon Oxynitride
Authors: by Andrei A. Gismatulin, Gennadiy N. Kamaev, Vladimir A. Volodin and Vladimir A. Gritsenko
Link: https://www.mdpi.com/2079-9292/12/3/598

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