Majeed, L.; Amin, S.I.; Rasool, Z.; Bashir, I.; Kumar, N.; Anand, S.
TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit. Electronics 2023, 12, 536.
https://doi.org/10.3390/electronics12030536
AMA Style
Majeed L, Amin SI, Rasool Z, Bashir I, Kumar N, Anand S.
TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit. Electronics. 2023; 12(3):536.
https://doi.org/10.3390/electronics12030536
Chicago/Turabian Style
Majeed, Lubna, Syed Intekhab Amin, Zuber Rasool, Ishrat Bashir, Naveen Kumar, and Sunny Anand.
2023. "TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit" Electronics 12, no. 3: 536.
https://doi.org/10.3390/electronics12030536
APA Style
Majeed, L., Amin, S. I., Rasool, Z., Bashir, I., Kumar, N., & Anand, S.
(2023). TCAD Device Modeling and Simulation Study of Organic Field Effect Transistor-Based pH Sensor with Tunable Sensitivity for Surpassing Nernst Limit. Electronics, 12(3), 536.
https://doi.org/10.3390/electronics12030536
