He, H.; Zhou, X.; Liu, Y.; Liu, W.; Yang, J.; Zhang, H.; Xie, G.; Liu, W.
Large-Scale β-Ga2O3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage. Electronics 2023, 12, 4315.
https://doi.org/10.3390/electronics12204315
AMA Style
He H, Zhou X, Liu Y, Liu W, Yang J, Zhang H, Xie G, Liu W.
Large-Scale β-Ga2O3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage. Electronics. 2023; 12(20):4315.
https://doi.org/10.3390/electronics12204315
Chicago/Turabian Style
He, Hao, Xinlong Zhou, Yinchi Liu, Wenjing Liu, Jining Yang, Hao Zhang, Genran Xie, and Wenjun Liu.
2023. "Large-Scale β-Ga2O3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage" Electronics 12, no. 20: 4315.
https://doi.org/10.3390/electronics12204315
APA Style
He, H., Zhou, X., Liu, Y., Liu, W., Yang, J., Zhang, H., Xie, G., & Liu, W.
(2023). Large-Scale β-Ga2O3 Trench MOS-Type Schottky Barrier Diodes with 1.02 Ideality Factor and 0.72 V Turn-On Voltage. Electronics, 12(20), 4315.
https://doi.org/10.3390/electronics12204315
