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Open AccessArticle

Bias-Flip Technique for Frequency Tuning of Piezo-Electric Energy Harvesting Devices

Tianjin University, School of Electronic Information Engineering, 92 Weijin Rd, Nankai Dist., Tianjin, China
Texas Instruments, Inc., 12500 TI Blvd., Dallas, TX 75243, USA
Massachusetts Institute of Technology, EECS Dept, 77 Mass Ave, Cambridge, MA 02139, USA
Author to whom correspondence should be addressed.
J. Low Power Electron. Appl. 2013, 3(2), 194-214;
Received: 13 March 2013 / Revised: 7 May 2013 / Accepted: 24 May 2013 / Published: 18 June 2013
(This article belongs to the Special Issue Selected Papers from SubVt 2012 Conference)
Devices that harvest electrical energy from mechanical vibrations have the problem that the frequency of the source vibration is often not matched to the resonant frequency of the energy harvesting device. Manufacturing tolerances make it difficult to match the Energy Harvesting Device (EHD) resonant frequency to the source vibration frequency, and the source vibration frequency may vary with time. Previous work has recognized that it is possible to tune the resonant frequency of an EHD using a tunable, reactive impedance at the output of the device. The present paper develops the theory of electrical tuning, and proposes the Bias-Flip (BF) technique, to implement this tunable, reactive impedance. View Full-Text
Keywords: energy harvesting; bias-flip; piezo-electric energy harvesting; bias-flip; piezo-electric
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Zhao, J.; Ramadass, Y.; Lang, J.; Ma, J.; Buss, D. Bias-Flip Technique for Frequency Tuning of Piezo-Electric Energy Harvesting Devices. J. Low Power Electron. Appl. 2013, 3, 194-214.

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