Sun, C.; Ai, X.; Zhang, H.; Chou, H.; Lyu, H.; Chen, G.
Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field. Coatings 2023, 13, 1634.
https://doi.org/10.3390/coatings13091634
AMA Style
Sun C, Ai X, Zhang H, Chou H, Lyu H, Chen G.
Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field. Coatings. 2023; 13(9):1634.
https://doi.org/10.3390/coatings13091634
Chicago/Turabian Style
Sun, Chenguang, Xingtian Ai, Hui Zhang, Hungpang Chou, Huiyun Lyu, and Guifeng Chen.
2023. "Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field" Coatings 13, no. 9: 1634.
https://doi.org/10.3390/coatings13091634
APA Style
Sun, C., Ai, X., Zhang, H., Chou, H., Lyu, H., & Chen, G.
(2023). Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field. Coatings, 13(9), 1634.
https://doi.org/10.3390/coatings13091634
