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Terahertz and Photoelectron Emission from Nanoporous Gold Films on Semiconductors

1
State key laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China
2
Shanghai Key Lab of Modern Optical System, School of Optical-Electrical and Computing Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
*
Author to whom correspondence should be addressed.
Nanomaterials 2019, 9(3), 419; https://doi.org/10.3390/nano9030419
Received: 16 February 2019 / Revised: 6 March 2019 / Accepted: 7 March 2019 / Published: 12 March 2019
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Abstract

Efficient terahertz and photoelectron emission were observed from nano-porous gold (NPG) films deposited on an intrinsic gallium arsenide (GaAs) semiconductor substrate stimulated by femtosecond laser with pulse width of 60 fs. Time-domain THz emission and reflection spectroscopy confirmed that the free charges accelerated by irradiated femtosecond laser pulses transferred from the NPG films into the GaAs substrates. Accordingly, charges accumulation was reduced in the NPG films, resulting in a stronger emission of THz pulse than that from NPG films deposited on SiO2 substrate. Charges injected into the GaAs substrate enforced an observable decrease of the THz refractive index proportional to the intensity of incident light. In comparison, for NPG deposited on glass substrates, laser induced free charges were accumulated in the NPG films, and femtosecond laser pulses irradiating on the NPG films made no changes of the THz refractive index of the glass substrates. View Full-Text
Keywords: nanoporous gold; terahertz radiation; localized surface plasmons; optical rectification nanoporous gold; terahertz radiation; localized surface plasmons; optical rectification
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MDPI and ACS Style

Nan, J.; Li, M.; Zhang, L.; Yuan, S.; He, B.; Zeng, H. Terahertz and Photoelectron Emission from Nanoporous Gold Films on Semiconductors. Nanomaterials 2019, 9, 419.

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