Na, J.-H.; Park, J.-H.; Park, W.; Feng, J.; Eun, J.-S.; Lee, J.; Lee, S.-H.; Jang, J.; Kang, I.M.; Kim, D.-K.;
et al. Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors. Nanomaterials 2024, 14, 466.
https://doi.org/10.3390/nano14050466
AMA Style
Na J-H, Park J-H, Park W, Feng J, Eun J-S, Lee J, Lee S-H, Jang J, Kang IM, Kim D-K,
et al. Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors. Nanomaterials. 2024; 14(5):466.
https://doi.org/10.3390/nano14050466
Chicago/Turabian Style
Na, Jeong-Hyeon, Jun-Hyeong Park, Won Park, Junhao Feng, Jun-Su Eun, Jinuk Lee, Sin-Hyung Lee, Jaewon Jang, In Man Kang, Do-Kyung Kim,
and et al. 2024. "Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors" Nanomaterials 14, no. 5: 466.
https://doi.org/10.3390/nano14050466
APA Style
Na, J.-H., Park, J.-H., Park, W., Feng, J., Eun, J.-S., Lee, J., Lee, S.-H., Jang, J., Kang, I. M., Kim, D.-K., & Bae, J.-H.
(2024). Dependence of Positive Bias Stress Instability on Threshold Voltage and Its Origin in Solution-Processed Aluminum-Doped Indium Oxide Thin-Film Transistors. Nanomaterials, 14(5), 466.
https://doi.org/10.3390/nano14050466
