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Journal: Nanomaterials, 2024
Volume: 14
Number: 1471
1471
Article: Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN_x Stress-Engineering Technique
Authors: by Chenkai Deng, Peiran Wang, Chuying Tang, Qiaoyu Hu, Fangzhou Du, Yang Jiang, Yi Zhang, Mujun Li, Zilong Xiong, Xiaohui Wang, Kangyao Wen, Wenmao Li, Nick Tao, Qing Wang and Hongyu Yu
Link: https://www.mdpi.com/2079-4991/14/18/1471

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