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Journal: NanomaterialsVolume: 13Number: 2410
Article: Low-Temperature Solution-Processed HfZrO Gate Insulator for High-Performance of Flexible LaZnO Thin-Film Transistor
- Authors:
- Yeoungjin Chang 1,2,
- Ravindra Naik Bukke 3,* and
- Jin Jang 1,*
- et al.
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