- Article
Manipulation of Si Doping Concentration for Modification of the Electric Field and Carrier Injection for AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
- Mengqian Fang,
- Kangkai Tian,
- Chunshuang Chu,
- Yonghui Zhang,
- Zi-Hui Zhang and
- Wengang Bi
Electron overflow is one of the key factors that limit the quantum efficiency for AlGaN-based deep-ultraviolet light-emitting diodes. In this work, we report a numerical study to improve the electron injection efficiency by manipulating the electric...

