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Crystals 2017, 7(9), 262;

LPE Growth of Single Crystalline Film Scintillators Based on Ce3+ Doped Tb3−xGdxAl5−yGayO12 Mixed Garnets

Institute of Physics, Kazimierz Wielki University in Bydgoszcz, 85090 Bydgoszcz, Poland
Institute for Scintillation Materials, National Academy of Sciences of Ukraine, 61001 Kharkiv, Ukraine
SSI Institute for Single Crystals, National Academy of Sciences of Ukraine, 61178 Kharkiv, Ukraine
Institute of Nuclear Physics, Polish Academy of Sciences, 31342 Krakow, Poland
Authors to whom correspondence should be addressed.
Received: 24 July 2017 / Revised: 24 August 2017 / Accepted: 25 August 2017 / Published: 30 August 2017
(This article belongs to the Special Issue Luminescent Properties of Lanthanoid Doped Crystals)
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The growth of single crystalline films (SCFs) with excellent scintillation properties based on the Tb1.5Gd1.5Al5−yGayO12:Ce mixed garnet at y = 2–3.85 by Liquid Phase Epitaxy (LPE) method onto Gd3Al2.5Ga2.5O12 (GAGG) substrates from BaO based flux is reported in this work. We have found that the best scintillation properties are shown by Tb1.5Gd1.5Al3Ga2O12:Ce SCFs. These SCFs possess the highest light yield (LY) ever obtained in our group for LPE grown garnet SCF scintillators exceeding by at least 10% the LY of previously reported Lu1.5Gd1.5Al2.75Ga2.25O12:Ce and Gd3Al2–2.75 Ga3–2.25O12:Ce SCF scintillators, grown from BaO based flux. Under α-particles excitation, the Tb1.5Gd1.5 Al3Ga2O12:Ce SCF show LY comparable with that of high-quality Gd3Al2.5Ga2.5O12:Ce single crystal (SC) scintillator with the LY above 10,000 photons/MeV but faster (at least by 2 times) scintillation decay times t1/e and t1/20 of 230 and 730 ns, respectively. The LY of Tb1.5Gd1.5Al2.5Ga2.5O12:Ce SCFs, grown from PbO flux, is comparable with the LY of their counterparts grown from BaO flux, but these SCFs possess slightly slower scintillation response with decay times t1/e and t1/20 of 330 and 990 ns, respectively. Taking into account that the SCFs of the Tb1.5Gd1.5Al3–2.25Ga2–2.75O12:Ce garnet can also be grown onto Ce3+ doped GAGG substrates, the LPE method can also be used for the creation of the hybrid film-substrate scintillators for simultaneous registration of the different components of ionization fluxes. View Full-Text
Keywords: liquid phase epitaxy; single crystalline films; scintillators; mixed garnets; Tb3+ cations liquid phase epitaxy; single crystalline films; scintillators; mixed garnets; Tb3+ cations

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Gorbenko, V.; Zorenko, T.; Witkiewicz, S.; Paprocki, K.; Sidletskiy, O.; Fedorov, A.; Bilski, P.; Twardak, A.; Zorenko, Y. LPE Growth of Single Crystalline Film Scintillators Based on Ce3+ Doped Tb3−xGdxAl5−yGayO12 Mixed Garnets. Crystals 2017, 7, 262.

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