Order Article Reprints

Kumar M, Xu L, Labau T, Biscarrat J, Torrengo S, Charles M, Lecouvey C, Olivier A, Zgheib J, Escoffier R, et al. Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics. Crystals. 2025; 15(1):56. https://doi.org/10.3390/cryst15010056

Kumar, Mohit, Laurent Xu, Timothée Labau, Jérôme Biscarrat, Simona Torrengo, Matthew Charles, Christophe Lecouvey, Aurélien Olivier, Joelle Zgheib, René Escoffier, and et al. 2025. "Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics" Crystals 15, no. 1: 56. https://doi.org/10.3390/cryst15010056

Kumar, M., Xu, L., Labau, T., Biscarrat, J., Torrengo, S., Charles, M., Lecouvey, C., Olivier, A., Zgheib, J., Escoffier, R., & Buckley, J. (2025). Effect of p-InGaN Cap Layer on Low-Resistance Contact to p-GaN: Carrier Transport Mechanism and Barrier Height Characteristics. Crystals, 15(1), 56. https://doi.org/10.3390/cryst15010056