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Journal: Crystals, 2023
Volume: 13
Number: 416
Article:
ZnO and ZnO-Based Materials as Active Layer in Resistive Random-Access Memory (RRAM)
Authors:
by
Ewelina Nowak, Edyta Chłopocka and Mirosław Szybowicz
Link:
https://www.mdpi.com/2073-4352/13/3/416
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