The crystal structure, mechanical anisotropy, elastic properties and electronic characteristics, as well as the stability, of 
P4/
m BN are predicted by means of density functional theory. In this work, BN in the 
P4/
m phase demonstrates mechanical and dynamical stability.
            
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            The crystal structure, mechanical anisotropy, elastic properties and electronic characteristics, as well as the stability, of 
P4/
m BN are predicted by means of density functional theory. In this work, BN in the 
P4/
m phase demonstrates mechanical and dynamical stability. Compared with the values of bulk 
B, 
E and 
G in the 
P4/
m phase, the 
B of BN in the 
P4/
m phase is greater than that of dz4 BN, while the 
G and 
E of 
P4/
m BN are greater than those of 
Pnc2 BN and dz4 BN. The ratio of the bulk-to-shear modulus for 
P4/
m BN is less than 1.75 and dz4 BN, dz2 BN and lzlz2 BN, indicating that 
P4/
m BN is more brittle than dz4 BN, dz2 BN and lzlz2 BN. 
P4/
m BN exhibits stronger mechanical anisotropy in 
G and 
E than 
Pbca BN, 
P4
2/
mnm BN and 
Pm-3
m BN but much weaker mechanical anisotropy than 
P4/
mbm BN, B
7N
7, B
11N
11 and B
15N
15. In addition, 
P4/
m BN is a quasi-direct bandgap semiconductor, and the difference between the direct and the indirect bandgap is 0.008 eV. In order to obtain further characteristics of 
P4/
m BN for future synthetic verification, the 
X-ray diffraction (XRD) patterns for 
P4/
m BN are also calculated. Given its properties, 
P4/
m BN is a good candidate for photoelectric devices.
            
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