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Journal: Crystals, 2021
Volume: 11
Number: 1248
1248
Article:
Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment
Authors:
by
Jin Cao, Liang Chen, Xin Chen, Yu Zhu, Jianqi Dong, Baoyu Wang, Miao He and Xingfu Wang
Link:
https://www.mdpi.com/2073-4352/11/10/1248
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Cite
Cao, J.; Chen, L.; Chen, X.; Zhu, Y.; Dong, J.; Wang, B.; He, M.; Wang, X. Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment. Crystals 2021, 11, 1248. https://doi.org/10.3390/cryst11101248
Cao J, Chen L, Chen X, Zhu Y, Dong J, Wang B, He M, Wang X. Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment. Crystals. 2021; 11(10):1248. https://doi.org/10.3390/cryst11101248
Chicago/Turabian StyleCao, Jin, Liang Chen, Xin Chen, Yu Zhu, Jianqi Dong, Baoyu Wang, Miao He, and Xingfu Wang. 2021. "Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment" Crystals 11, no. 10: 1248. https://doi.org/10.3390/cryst11101248
APA StyleCao, J., Chen, L., Chen, X., Zhu, Y., Dong, J., Wang, B., He, M., & Wang, X. (2021). Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment. Crystals, 11(10), 1248. https://doi.org/10.3390/cryst11101248