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Micromachines, Volume 15, Issue 5
May 2024 - 110 articles
Cover Story: Researchers used a horizontal hot wall CVD reactor to grow a homoepitaxial layer on a 150 mm, 4° off-axis 4H-SiC wafer, using H2 as the carrier gas, TCS as the Si source and C3H8 or C2H4 as the carbon source, respectively. The Cl element from TCS was introduced to change the formation of intermediate products and optimize the epitaxial quality. They compared the effect of C3H8 and C2H4 as a carbon source. The C2H4 sample showed a slower growth rate and lower doping but better uniformity and surface roughness, which indicates that C2H4 is more suitable for conventional growth processes in commercial wafer production than C3H8. The study highlights that buffer layer conditions, particularly varying C/Si ratios, critically influence epitaxial quality, which is essential for in-sequence device manufacturing. View this paper
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Micromachines - ISSN 2072-666X