- Communication
Origin of the High Density of Oxygen Vacancies at the Back Channel of Back-Channel-Etched a-InGaZnO Thin-Film Transistors
- Shimin Ge,
- Juncheng Xiao,
- Shan Li,
- Dong Yuan,
- Yuhua Dong and
- Shengdong Zhang
This study reveals the pronounced density of oxygen vacancies (Vo) at the back channel of back-channel-etched (BCE) a-InGaZnO (a-IGZO) thin-film transistors (TFTs) results from the sputtered deposition rather than the wet etching process of the sourc...

