Order Article Reprints

You S, Lei Y, Wang L, Chen X, Zhou T, Wang Y, Wang J, Liu T, Li X, Zhao S, et al. 750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers. Micromachines. 2024; 15(12):1460. https://doi.org/10.3390/mi15121460

You, Shuzhen, Yilong Lei, Liang Wang, Xing Chen, Ting Zhou, Yi Wang, Junbo Wang, Tong Liu, Xiangdong Li, Shenglei Zhao, and et al. 2024. "750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers" Micromachines 15, no. 12: 1460. https://doi.org/10.3390/mi15121460

You, S., Lei, Y., Wang, L., Chen, X., Zhou, T., Wang, Y., Wang, J., Liu, T., Li, X., Zhao, S., Zhang, J., & Hao, Y. (2024). 750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers. Micromachines, 15(12), 1460. https://doi.org/10.3390/mi15121460