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Journal: Micromachines, 2024
Volume: 15
Number: 147
Article:
Breakdown Characteristics of GaN DMISFETs Fabricated via Mg, Si and N Triple Ion Implantation
Authors:
by
Tohru Nakamura, Michitaka Yoshino, Toru Toyabe and Akira Yasuda
Link:
https://www.mdpi.com/2072-666X/15/1/147
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