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Journal: MaterialsVolume: 17Number: 4008
Article: High Electron Mobility in Si-Doped Two-Dimensional β-Ga2O3 Tuned Using Biaxial Strain
  • Authors:
  • Hui Zeng1,2,*,
  • Chao Ma2 and
  • Meng Wu3,*
Link: https://www.mdpi.com/1996-1944/17/16/4008

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