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Journal: Materials, 2024
Volume: 17
Number: 4008
Article:
High Electron Mobility in Si-Doped Two-Dimensional β-Ga2O3 Tuned Using Biaxial Strain
Authors:
by
Hui Zeng, Chao Ma and Meng Wu
Link:
https://www.mdpi.com/1996-1944/17/16/4008
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