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Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7%
 
 

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Journal: Materials, 2022
Volume: 15
Number: 989

Article: Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density
Authors: by Chiao Chang, Hung-Hsiang Cheng, Gary A. Sevison, Joshua R. Hendrickson, Zairui Li, Imad Agha, Jay Mathews, Richard A. Soref and Greg Sun
Link: https://www.mdpi.com/1996-1944/15/3/989

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