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Journal: Materials, 2022
Volume: 15
Number: 6895
Article:
Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics
Authors:
by
Cheng-Yu Huang, Soumen Mazumder, Pu-Chou Lin, Kuan-Wei Lee and Yeong-Her Wang
Link:
https://www.mdpi.com/1996-1944/15/19/6895
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