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Journal: Materials, 2022
Volume: 15
Number: 6895

Article: Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics
Authors: by Cheng-Yu Huang, Soumen Mazumder, Pu-Chou Lin, Kuan-Wei Lee and Yeong-Her Wang
Link: https://www.mdpi.com/1996-1944/15/19/6895

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