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Journal: Materials, 2020
Volume: 13
Number: 4740
4740
Article: Use of Bilayer Gate Insulator in GaN-on-Si Vertical Trench MOSFETs: Impact on Performance and Reliability
Authors: by Kalparupa Mukherjee, Carlo De Santi, Matteo Borga, Shuzhen You, Karen Geens, Benoit Bakeroot, Stefaan Decoutere, Gaudenzio Meneghesso, Enrico Zanoni and Matteo Meneghini
Link: https://www.mdpi.com/1996-1944/13/21/4740

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