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Journal: Energies, 2017
Volume: 10
Number: 153

Article: Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate
Authors: by Matteo Meneghini, Oliver Hilt, Joachim Wuerfl and Gaudenzio Meneghesso
Link: https://www.mdpi.com/1996-1073/10/2/153

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