Search Results (107)

Zinc oxide (ZnO) is currently one of the most significant wide-bandgap semiconductor materials, attracting extensive research across diverse fields including materials science, chemistry, physics, medicine, electronics, and power engineering. Its exceptional properties, such as high optical transparency, high electron mobility, chemical stability, and compatibility with low-cost fabrication techniques, have established ZnO as a versatile material with immense application potential. A critical application for ZnO is its role as a transparent conducting oxide (TCO) in modern optoelectronic and photovoltaic devices, as well as in sensors, transparent electronics, and spintronics. To meet the requirements of these advanced applications, precise control over the structural, optical, and electrical properties of ZnO thin films is essential. This is effectively achieved through the selection of specific synthesis methods and intentional modification techniques, such as doping. This review provides a comprehensive overview of the synthesis and modification of ZnO thin films, with a particular focus on how various dopants influence their fundamental characteristics. The work discusses a range of deposition techniques, including physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD), sol–gel methods, spray pyrolysis, and other solution-based approaches. The novelty of this review lies in its comparative analysis of different doping strategies combined with various thin-film deposition techniques, highlighting how specific synthesis routes influence dopant incorporation and ultimately determine functional properties. Furthermore, recent advances in tailoring ZnO thin films are summarized, alongside the identification of key challenges and future research directions. Ultimately, this work aims to provide researchers with a systematic perspective on the synthesis–structure–property relationships in doped ZnO thin films to support the development of optimized materials for next-generation electronic and optoelectronic devices. This review, thus, serves as a comprehensive reference for researchers and engineers seeking to optimize the functionality of ZnO-based thin films for emerging technological applications. Full article

Indium Tin Oxide (ITO) is one of the most widely used ohmic materials for fabricating ohmic layers in thin-film solar cells. ITO thin layers have reached almost the maximum theoretical conductivity and the lowest practical resistivity. Along with indium’s toxic environmental impact and the high cost of materials, these are the reasons why new materials for efficient, cheaper thin-film transparent ohmic layers are being examined. One of those materials is copper-doped zinc oxide (ZnO:Cu). In this paper, we present a new approach to copper-doped zinc oxide fabrication methods, based on the modern authorial Physical Vapor Co-Deposition technique, which involves optimizing Cu concentration to fine-tune crystal structure, optical band gap, and electrical properties, creating n-type TCOs essential for efficient charge transport in next-generation thin films perovskite solar cells. Full article

The design, fabrication, and characterization of a highly transparent and flexible monopole antenna optimized for the 3–6 GHz frequency band are presented in this study. In traditional Transparent Conductive Oxide (TCO) designs, there is always a trade-off between RF efficiency and optical transparency. Therefore, an Aerosol Jet^® 5X system was used to directly print a silver nanoparticle mesh onto a 50 μm colorless polyimide (PI) substrate. Using this fabrication method, a durable structure was obtained that exhibits reliable electrical and mechanical performance, achieving 85% optical transmittance in the visible spectrum and a gain of −2.5 dBi. To evaluate the flexibility and compatibility of the antenna, it was bent over a cylindrical surface and integrated with a commercial solar panel in both simulation and experimental environments. The results demonstrate that the impedance matching and radiation characteristics remain stable under bending conditions, with no critical decrease observed in solar energy harvesting. Consequently, this design has strong potential as a solution for energy-autonomous Internet of Things systems, smart windows, and CubeSat applications. Full article

This study investigates pristine and doped ZnO thin films fabricated via the sol-gel technique, aiming to address efficiency challenges when used as transparent conductive oxide (TCO) layers in thin-film solar cells. ZnO was first doped with aluminum (Al), and subsequently with both Al and reduced graphene oxide (rGO), to evaluate the individual and combined effects of these dopants. The optimal pH value for the ZnO structure was initially determined, with the film produced at pH 9 exhibiting the most favorable characteristics. Al doping was then optimized at a ratio of Al/(Al + Zn) = 0.2, followed by optimization of the graphene content at 1.5 wt%. In this context, the structural, optical, and electrical properties of pristine ZnO, Al-doped ZnO (AZO), and Al and graphene co-doped ZnO (Gr:AZO) thin films were systematically investigated. These films were integrated as TCO layers into Cu₂SnS₃ (CTS)-based thin-film solar cells fabricated via physical vapor deposition (PVD). The cell architecture employed an 80 nm pristine ZnO window layer, while the doped ZnO films (300 nm) served as TCO layers. To assess the influence of the chemically deposited top layers, device performance was compared against a reference cell in which all layers were fabricated entirely using PVD. As expected, the reference cell exhibited superior performance compared to the cell whose AZO layer deposited chemically; however, the incorporation of both Al and graphene significantly enhanced the efficiency of the chemically modified cell, outperforming devices using only pristine or singly doped ZnO films. These results demonstrate the promising potential of co-doped solution-processed ZnO films as an alternative TCO layer in improving the performance of thin-film solar cell technologies. Full article

Transparent conductive oxides (TCOs), such as indium tin oxide (ITO), are essential for flexible electronics; however, conventional vacuum-based deposition is costly and thermally aggressive for polymers. This study investigated the surface functionalization of PET substrates with ITO thin film-based forced hydrolysis as a low-cost, reproducible alternative. $\mathrm{S}\mathrm{n}{\mathrm{O}}_2$ nanoparticles were synthesized by forced hydrolysis at 180 °C for 3 h and 6 h, yielding crystalline nanoparticles with a cassiterite phase and an average crystallite size of 20.34 nm. The process showed high reproducibility, enabling consistent structural properties without complex equipment or high-temperature treatments. The $\mathrm{S}\mathrm{n}{\mathrm{O}}_2$ sample obtained at 3 h was incorporated into commercial ${\mathrm{I}\mathrm{n}}_2{\mathrm{O}}_3$ to form a mixed In–Sn–O oxide, which was subsequently deposited onto PET substrates by spin coating onto UV-activated PET. The resulting 1.1 µm ITO films demonstrated good adhesion (4B according to ASTM D3359), a low resistivity of 1.27 × 10⁻⁶ Ω·m, and an average optical transmittance of 80% in the visible range. Although their resistivity is higher than vacuum-processed films, this route provides a superior balance of mechanical robustness, featuring a hardness of (H) of 3.8 GPa and an elastic modulus (E) of 110 GPa. These results highlight forced hydrolysis as a reproducible route for producing ITO/PET thin films. The thickness was strategically optimized to act as a structural buffer, preventing crack propagation during bending. Forced hydrolysis-driven PET sheet functionalization is an effective route for producing durable ITO/PET electrodes that are suitable for flexible sensors and solar cells. Full article

Lead-free chalcogenide perovskites are emerging as promising alternatives to hybrid halide perovskites due to their superior thermal stability, non-toxicity, and strong optical absorption. In this study, the photovoltaic performance of single-junction BaHfSe₃-based perovskite solar cells (PSCs) with the TCO/TiO₂/BaHfSe₃/Cu₂O/Au configuration is systematically investigated using SCAPS-1D simulations. Device optimization identifies TiO₂ and Cu₂O as suitable ETL and HTL materials, respectively. The optimized structure—TCO/TiO₂ (50 nm)/BaHfSe₃ (500 nm)/Cu₂O (100 nm)/Au—achieves a power conversion efficiency (PCE) of 24.47% under standard conditions. Simulation results reveal that device efficiency is influenced by absorber thickness and trap density. A detailed temperature-dependent study highlights that photovoltaic parameter efficiency is governed by the barrier alignment at the TCO/ETL interface. For lower TCO (Transparent Conducting Oxide) work functions (3.97–4.07 eV), PCE decreases monotonically with temperature, attributed to the increase in reverse saturation current resulting from a higher intrinsic carrier concentration. By contrast, higher TCO work functions (4.47–4.8 eV) yield an initial increase in efficiency with temperature, driven by reduced barrier height and favorable Fermi level shifts before efficiency declines at further elevated temperatures. These insights underscore the promise of BaHfSe₃ as a lead-free, environmentally robust perovskite absorber for next-generation PSCs, and highlight the critical importance of interface engineering for achieving optimal thermal and operational performance. Full article

Advancements in flexible, low-cost, and recyclable alternatives to transparent conductive oxides (TCOs) are critical challenges in the sustainability of third-generation solar cells. This work introduces a copper mesh-based transparent electrode for dye-sensitized solar cells, replacing conventional fluorine doped-tin oxide (FTO)-coated glass to simultaneously reduce spectral reflection losses, enhance mechanical flexibility, and enable material recyclability. Titanium dioxide (TiO₂) photoanodes were synthesized and directly deposited onto the mesh via a single-step, low-energy ball milling process, which eliminates TiO₂ paste preparation and high-temperature annealing while reducing fabrication time from over three hours to 30 min. Structural and surface analyses confirmed the deposition of high-purity anatase-phase TiO₂ with strong adhesion to the mesh branches, enabling improved dye loading and electron injection pathways. Optical studies revealed higher visible light absorption for the copper mesh compared to FTO in the visible range, further enhanced upon TiO₂ and Ru-based dye deposition. Electrochemical measurements showed that TiO₂/Cu mesh electrodes exhibited significantly higher photocurrent densities and faster photo response rates than bare Cu mesh, with dye-sensitized Cu mesh achieving the lowest charge transfer resistance in impedance analysis. Techno–economic and sustainability assessments revealed a decrease of 7.8% in cost and 82% in CO₂ emissions associated with the fabrication of electrodes as compared to conventional TCO electrodes. The synergy between high conductivity, transparency, mechanical durability, and a scalable, recyclable fabrication route positions this architecture as a strong candidate for next-generation dye-sensitized solar modules that are both flexible and sustainable. Full article

This study introduces a real-time acoustic emission (AE) monitoring system for the micro-milling of fluorine-doped tin oxide (FTO) thin films, a critical transparent conductive oxide (TCO) material. The system uses AE sensors to capture high-frequency elastic waves generated during the micro-milling process. We combine experimental and theoretical analyses to investigate how various milling parameters influence the AE signals. To address the crucial challenge of ensuring ductile mode cutting in brittle materials like FTO, we employed a convolutional neural network (CNN) to identify the transition between ductile and brittle machining modes. A CNN was trained on energy-based features extracted from the AE signals, achieving a classification accuracy of 97.37%. This high accuracy demonstrates the effectiveness of integrating AE sensing with deep learning for interpreting complex micro-machining data. The results confirm that this combined approach offers a powerful, non-destructive, and intelligent monitoring solution for improving process control and understanding in the micro-milling of fragile conductive thin films. Full article

Transparent conductive oxides (TCOs) have become essential components in a broad range of modern devices, including smartphones, flat-panel displays, and photovoltaic cells. Currently, indium tin oxide (ITO) is used in approximately 90% of these devices. However, ITO prices continue to rise due to the limited supply of indium (In), making the development of alternative materials for TCOs indispensable. Therefore, this study highlights the latest advances in creating new, affordable materials, with a focus on aluminum-doped zinc oxide (AZO). Over the last few decades, this material has been widely studied to improve its physical properties, particularly its low electrical resistivity, which can affect the performance of various devices. Now, it is close to replacing ITO due to several advantages including cost-effectiveness, stability under hydrogen plasma, low processing temperatures, and lack of toxicity. Besides that, in comparison to other TCOs such as IZO, IGZO, or IZrO, AZO achieved a low electrical resistivity (10⁻⁵ ohm cm) while maintaining a high transparency across the visible spectrum (over 85%). Additionally, due to the increasing development of technologies utilizing such materials, it is essential to develop more effective techniques for producing TCOs on a larger scale. Additionally, due to the increasing development of technologies utilizing such materials, it is essential to develop more effective techniques for producing TCOs on a larger scale. This review emphasizes the potential of AZO as a cost-effective and scalable alternative to ITO, highlighting key advancements in deposition techniques such as pulsed laser deposition (PLD). Full article

The rising demand for sustainable energy solutions has spurred the development of advanced materials for photovoltaic devices. Among these, transparent conductive oxides (TCOs) play a pivotal role in enhancing device efficiency, particularly in silicon-based solar cells. However, the reliance on indium-based TCOs like ITO raises concerns over cost and material scarcity, prompting the search for more abundant and scalable alternatives. This study focuses on the fabrication and characterization of aluminum-doped zinc oxide (ZnO:Al, AZO) thin films deposited via Atomic Layer Deposition (ALD), targeting their application as transparent conductive oxides in silicon solar cells. The ZnO:Al thin films were synthesized by alternating supercycles of ZnO and Al₂O₃ depositions at 225 °C, allowing precise control of composition and thickness. Structural, optical, and electrical properties were assessed using Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), Transmission Electron Microscopy (TEM), Raman spectroscopy, spectroscopic ellipsometry, and four-point probe measurements. The results confirmed the formation of uniform, crack-free ZnO:Al thin films with a spinel-type ZnAl₂O₄ crystalline structure. Optical analyses revealed high transparency (more than 80%) and tunable refractive indices (1.64 ÷ 1.74); the energy band gap was 2.6 ÷ 3.07 eV, while electrical measurements demonstrated low sheet resistance values, reaching 85 Ω/□ for thicker films. This combination of optical and electrical properties underscores the potential of ALD-grown AZO thin films to meet the stringent demands of next-generation photovoltaics. Integration of Zn:Al thin films into silicon solar cells led to an optimized photovoltaic performance, with the best cell achieving a short-circuit current density of 36.0 mA/cm² and a power conversion efficiency of 15.3%. Overall, this work highlights the technological relevance of ZnO:Al thin films as a sustainable and cost-effective alternative to conventional TCOs, offering pathways toward more accessible and efficient solar energy solutions. Full article

As the typical representative of amorphous oxide semiconductors (AOS), quaternary indium gallium zinc oxide (IGZO) has been applied as the active layer of thin-film transistors (TFTs), but their mobility is still low (usually ~10 cm²/Vs). IGTO is reported to have larger mobility owing to the addition of Tin (Sn) in IZO. So, whether Sn doping can increase the optoelectronic properties of IGZO is a new topic worth studying. In this study, four series of quinary InGaZnSnO (IGZTO) oxide thin films were deposited on glass substrates using a high-purity IGZTO (In:Ga:Zn:Sn:O = 1:0.5:1.5:0.25:x, atomic ratio) ceramic target by RF magnetron sputtering. The effects of fabrication parameters (sputtering power, argon gas flow, and target-to-substrate distance) and film thickness on the microstructure, optical, and electrical properties of IGZTO thin films were investigated. The results show that all IGZTO thin films deposited at room temperature (RT) are amorphous and have a smooth and uniform surface with a low roughness (RMS of 0.441 nm, RA of 0.332 nm). They exhibit good average visible light transmittance (89.02~90.69%) and an optical bandgap of 3.47~3.56 eV. When the sputtering power is 90 W, the argon gas flow rate is 50 sccm, and the target-to-substrate distance is 60 mm, the IGZTO films demonstrate optimal electrical properties: carrier concentration (3.66 × 10¹⁹ cm⁻³), Hall mobility (29.91 cm²/Vs), and resistivity (0.54 × 10⁻² Ω·cm). These results provide a valuable reference for the property modulation of IGZTO films and the potential application in optoelectronic devices such as TFTs. Full article

As wireless communication technology advances towards faster and higher transmission rates such as Fifth Generation (5G) and beyond, the need for multiple access points increases. The growing demand for access points often results in them occupying any available surface area and potentially disrupting the existing scenery. In order to address this issue, Optically Transparent Antennas (OTAs) emerge as an optimal solution for balancing the aesthetics of a specific setting with the desired communication system requirements. These antennas can be integrated into various infrastructures without interfering with the design of the objects on which they are installed. Research on the techniques and materials for OTA fabrication, which is proposed as a solution to the 5G wireless communication demand for access points, is presented. This work will highlight key antenna characteristics such as gain, bandwidth, efficiency, and transparency, and how the materials used for OTA implementation influence these parameters. Techniques like Metal Mesh (MM), Transparent Conductive Film (TCF), and Transparent Conductive Oxide (TCO) will be explained. The performance of the OTAs will be analyzed based on gain, bandwidth, transparency, and efficiency. This paper also addresses the challenges and limitations associated with OTAs. Finally, it confirms that OTAs offer a compelling solution for this scenario by balancing aesthetics with high antenna performance, making them an innovation for future wireless networks. Full article

The expansion of silicon heterojunction (SHJ) solar cell production has prompted concerns regarding the rising consumption of indium. To address the issue of indium scarcity, the use of benign hydrometallurgical conditions for the recovery of indium—a rare noble metal—from the transparent conductive oxide (TCO) layer of the cells was investigated. The results showed that due to the insufficient adhesion between the silver fingers and the TCO layer, the complete recovery of the silver fingers could be accomplished without damaging the cell by the etching process involving 10% NaOH at 90 °C for 10 min. The optimal chemical treatment conditions were adjusted to ensure the efficient dissolution of indium metal from the cell into solution. The subsequent solvent extraction stripping process yielded an indium concentration of 6232 mg/L, a 24-fold increase over the initial leach solution concentration. Finally, a 12-h replacement reaction using aluminum plates was employed to achieve higher indium purity. The final recovery of indium from SHJ cells was determined to be approximately 85%, and an approximate cost analysis was conducted to assess the potential future of SHJ cell recycling. Full article

This study offers a comprehensive summary of the current states as well as potential future directions of transparent conducting oxides (TCOs), particularly tin-doped indium oxide (ITO), the most readily accessible TCO on the market. Solar cells, flat panel displays (FPDs), liquid crystal displays (LCDs), antireflection (AR) coatings for airbus windows, photovoltaic and optoelectronic devices, transparent p–n junction diodes, etc. are a few of the best uses for this material. Other conductive metals that show a lot of promise as substitutes for traditional conductive materials include copper, zinc oxide, aluminum, silver, gold, and tin. These metals are also utilized in AR coatings. The optimal deposition techniques for creating ITO films under the current conditions have been determined to be DC (direct current) and RF (radio frequency) MS (magnetron sputtering) deposition, both with and without the introduction of Ar gas. When producing most types of AR coatings, it is necessary to obtain thicknesses of at least 100 nm and minimum resistivities on the order of 10⁻⁴ Ω cm. For AR coatings, issues related to less-conductive materials than ITO have been considered. Full article

Indium tin oxide (ITO) is a transparent conductive oxide (TCO) commonly used in the realization of optoelectronic devices needing at least a transparent electrode. In this work, ITO thin films were deposited on glass substrates by non-reactive RF magnetron sputtering, investigating the effects of power density, sputtering pressure, and substrate temperature on the electrical, optical, and structural properties of the as-grown films. High-quality films, in terms of crystallinity, transparency, and conductivity were obtained. The 120 nm thick ITO films grown at 225 °C under an argon pressure of 6.9 mbar and a sputtering power density of 2.19 W/cm² without post-annealing treatments in an oxidizing environment showed an optical transmittance near 90% at 550 nm and a resistivity of $2.10\times {10}^{-4}$ $\mathsf{\Omega }$ cm. This material was applied as the electrode of simple-structure organic light-emitting diodes (OLEDs). Full article