Search Results (829)

This study demonstrates drift-assisted positron annihilation lifetime spectroscopy on a p-type (100) silicon substrate in a MOS capacitor, using an applied electric field to control the spatial positron distribution prior to annihilation. The device was operated under accumulation, depletion, and inversion conditions, revealing that the internal electric field can drift-transport positrons either toward or away from the SiO₂/Si interface, acting as a diffusion barrier or support, respectively. Key positron drift-transport parameters were derived from lifetime data, and the influence of the non-linear electric field on positron trapping was analyzed. The comparison of the presented results to our previous oxide-side drift experiment on the same metal-oxide–silicon capacitor indicates that the interface exhibits two distinct sides, with different types of defects: void-like and vacancy-like ($P_{\mathrm{b}}$ centers). The positron data also suggest that the charge state of the $P_{\mathrm{b}}$ centers likely varies with the operation mode of the MOS, which affects their positron trapping behavior. Full article

The current–voltage characteristics (IVCs) of anodic TiO₂ films in a thin-film structure (Carbon paste/TiO₂/Ti/Al) were investigated in the temperature range of T = 80–300 K with bias voltages from −0.5 V to +0.5 V. Anodic oxide film, with a thickness of 14 nm, was obtained by electrochemical oxidation of Ti at a voltage of 10 V. The obtained data for various temperatures showed that the IVCs in the forward (negative on the Ti electrode) and reverse (positive on the Ti electrode) bias of the thin film structure are not symmetrical. Based on the analysis, three temperature ranges (sections) were identified in which the IVCs differ in their behavior. Examination of the IVCs revealed that the conductivity mechanism in Section I (temperature range from 298 to 263 K) is determined by the Space Charge Limited Current (SCLC). Section II, in the temperature range from 243 to 203 K, is characterized by the onset of conductivity involving donor centers, in the case where the concentration of electrons on traps is significantly higher than the concentration of electrons in the conduction band. In Section III, within the temperature range from 183 to 90 K, the conduction mechanism is the Poole–Frenkel process involving donor centers. These donor centers are located below the level of traps in the forbidden band. The results obtained indicate that anodic TiO₂ is an n-type semiconductor, in the bandgap of which there are both electron traps and donor centers formed by anionic (oxygen) vacancies. The different behavior of the characteristic energy with different sample biasing in the case of the Poole–Frenkel mechanism indicates a two-layer structure of anodic TiO₂. Full article

A new family of highly uniform, cubic-shaped Cu₃VS_xSe_4−x (CVSSe; 0 ≤ x ≤ 4) nanocrystals based on earth-abundant materials with intermediate bandgaps (IB) in the visible range is reported, synthesized via a hot-injection method. The IB transitions and optical band gap of the novel CVSSe nanocrystals are investigated using ultraviolet-visible spectroscopy, revealing tunable band gaps that span the visible and near-infrared regimes. The composition-dependent relationships among the crystal phase, optical band gap, and photoluminescence properties of the novel IB semiconductors with progressive substitution of Se by S are examined in detail. High-resolution transmission electron microscopy and scanning electron microscopy characterization confirm the high crystallinity and uniform size (~19.7 nm × 17.2 nm for Cu₃VS₄) of the cubic-shaped nanocrystals. Density functional theory (DFT) calculations based on virtual crystal approximation support the experimental findings, showing good agreement in lattice parameters and band gaps across the CVSSe series and lending confidence that the targeted phases and compositions have been successfully realized. A current conversion efficiency, i.e., incident photon-to-current efficiency, of 14.7% was achieved with the p-type IB semiconductor Cu₃VS₄. These novel p-type IB semiconductor nanocrystals hold promise for enabling thin film solar cells with efficiencies beyond the Shockley–Queisser limit by allowing sub-band-gap photon absorption through intermediate-band transitions, in addition to the conventional direct-band-gap transition. Full article

Electric field-assisted local functionalization of materials is a resist-free technique generally applied at the nanoscale, which has been understood within the paradigm of the water meniscus. Using a home-made prototype the authors applied this technique at scales compatible with the biosensor industry (tens of microns). However, interpreting these results requires a different paradigm. The expansion of the oxidized region over time in two-dimensional materials under a localized electric field is modeled from first physical principles. Boltzmann statistics is applied to the oxyanion incorporation at the perimeter of the oxidized zone, and a new general relation between oxide radius and time is formulated. It includes the reduction in the energy barrier due to the field effect and its dependence on the oxide radius. To gain insight into this dependence whatever the layers structure, 2D material involved, or electrical operating conditions, simple structures based on multilayer stacks representing the main constituents are proposed, where the Poisson equation is solved using finite element calculations. This enables to derive energy barriers for oxyanion incorporation at varying spot radii which are consistent with those resulting from fitting experimental data. The reasonable agreement obtained provides researchers with a new tool to predict the evolution of local functionalization of 2D layers as a function of the following fabrication parameters: time, applied voltage, and relative humidity, solely based on materials properties. Full article

Tin selenide (SnSe) is a sustainable, lead-free IV–VI semiconductor whose layered orthorhombic crystal structure induces pronounced electronic and phononic anisotropy, enabling diverse energy-related functionalities. This review systematically summarizes recent progress in understanding the structure–property–processing relationships that govern SnSe performance in thermoelectric and optoelectronic applications. Key crystallographic characteristics are first discussed, including the temperature-driven Pnma–Cmcm phase transition, anisotropic band and valley structures, and phonon transport mechanisms that lead to intrinsically low lattice thermal conductivity below 0.5 W m⁻¹ K⁻¹ and tunable carrier transport. Subsequently, major synthesis strategies are critically compared, spanning Bridgman and vertical-gradient single-crystal growth, spark plasma sintering and hot pressing of polycrystals, as well as vapor- and solution-based thin-film fabrication, with emphasis on process windows, stoichiometry control, defect chemistry, and microstructure engineering. For thermoelectric applications, directional and temperature-dependent transport behaviors are analyzed, highlighting record thermoelectric performance in single-crystal SnSe at hi. We analyze directional and temperature-dependent transport, highlighting record thermoelectric figure of merit values exceeding 2.6 along the b-axis in single-crystal SnSe at ~900 K, as well as recent progress in polycrystalline and thin-film systems through alkali/coinage-metal doping (Ag, Na, Cu), isovalent and heterovalent substitution (Zn, S), and hierarchical microstructural design. For optoelectronic applications, optical properties, carrier dynamics, and photoresponse characteristics are summarized, underscoring high absorption coefficients exceeding 10⁴ cm⁻¹ and bandgap tunability across the visible to near-infrared range, together with interface engineering strategies for thin-film photovoltaics and broadband photodetectors. Emerging applications beyond energy conversion, including phase-change memory and electrochemical energy storage, are also reviewed. Finally, key challenges related to selenium volatility, performance reproducibility, long-term stability, and scalable manufacturing are identified. Overall, this review provides a process-oriented and application-driven framework to guide the rational design, synthesis optimization, and device integration of SnSe-based materials. Full article

Wafer-level thin-film stress measurement is essential for reliable semiconductor fabrication. However, existing techniques present limitations in practice. Interferometry achieves high precision but at a cost that becomes prohibitive for large wafers. Meanwhile laser-scanning systems are more affordable but can only provide sparse data points. This work develops a phase-measuring deflectometry (PMD) system to bridge this gap and deliver a full-field solution for wafer stress mapping. The implementation addresses three key challenges in adapting PMD. First, screen positioning and orientation are refined using an inverse bundle-adjustment approach, which performs multi-parameter optimization without re-optimizing the camera model and simultaneously uses residuals to quantify screen deformation. Second, a backward-propagation ray-tracing framework benchmarks two iterative strategies to resolve the slope-height ambiguity which is a fundamental challenge in PMD caused by the absence of a fixed optical center on the source side. The reprojection constraint strategy is selected for its superior convergence precision. Third, this strategy is integrated with regional wavefront reconstruction based on Hermite interpolation to effectively eliminate edge artifacts. Experimental results demonstrate a peak-to-valley error in the reconstructed topography of 0.48 µm for a spherical mirror with a radius of 500 mm. The practical utility of the system is confirmed through curvature mapping of a 12-inch patterned wafer and further validated by stress measurements on an 8-inch bare wafer, which show less than 5% deviation from industry-standard instrumentation. These results validate the proposed PMD method as an accurate and cost-effective approach for production-scale thin-film stress inspection. Full article

With the discovery of amorphous oxide semiconductors, a new era of electronics opened. Indium gallium zinc oxide (IGZO) overcame the problems of amorphous and poly-silicon by reaching mobilities of ~10 cm²/Vs and demonstrating thin-film transistors (TFTs) are easy to manufacture on transparent and flexible substrates. However, mobilities over 30 cm²/Vs have been difficult to reach and other materials have been introduced. Recently, polycrystalline In₂O₃ has demonstrated breakthroughs in the field. In₂O₃ TFTs have attracted attention because of their high mobility of over 100 cm²/Vs, which has been achieved multiple times, and because of their use in scaled devices with channel lengths down to 10 nm for high integration in back-end-of-the-line (BEOL) applications and others. The present review focuses first on the material properties with the understanding of the bandgap value, the importance of the position of the charge neutrality level (CNL), the doping effect of various atoms (Zr, Ge, Mo, Ti, Sn, or H) on the carrier concentration, the optical properties, the effective mass, and the mobility. We introduce the effects of the non-parabolicity of the conduction band and how to assess them. We also introduce ways to evaluate the CNL position (usually at ~E_C + 0.4 eV). Then, we describe TFTs’ general properties and parameters, like the field effect mobility, the subthreshold swing, the measurements necessary to assess the TFT stability through positive and negative bias temperature stress, and the negative bias illumination stress (NBIS), to finally introduce In₂O₃ TFTs. Then, we will introduce vacuum and non-vacuum processes like spin-coating and liquid metal printing. We will introduce the various dopants and their applications, from mobility and crystal size improvements with H to NBIS improvements with lanthanides. We will also discuss the importance of device engineering, introducing how to choose the passivation layer, the source and drain, the gate insulator, the substrate, but also the possibility of advanced engineering by introducing the use of dual gate and 2 DEG devices on the mobility improvement. Finally, we will introduce the recent breakthroughs where In₂O₃ TFTs are integrated in neuromorphic applications and 3D integration. Full article

As one of the polymorphs of the gallium oxide family, ε gallium oxide (ε-Ga₂O₃) demonstrates promising potential in high-power electronic devices and solar-blind photodetection applications. However, the synthesis of pure-phase ε-Ga₂O₃ remains challenging through low-energy consumption methods, due to its metastable phase of gallium oxide. In this study, we have fabricated pure-phase and highly oriented ε-Ga₂O₃ thin films on c-plane sapphire substrates via thermal atomic layer deposition (ALD) at a low temperature of 400 °C, utilizing low-reactive trimethylgallium (TMG) as the gallium precursor and ozone (O₃) as the oxygen source. X-ray diffraction (XRD) results revealed that the in situ-grown ε-Ga₂O₃ films exhibit a preferred orientation parallel to the (002) crystallographic plane, and the pure ε phase remains stable following a post-annealing up to 800 °C, but it completely transforms into β-Ga₂O₃ once the thermal treatment temperature reaches 900 °C. Notably, post-annealing at 800 °C significantly enhanced the crystalline quality of ε-Ga₂O₃. To evaluate the optoelectronic characteristics, metal–semiconductor–metal (MSM)-structured solar-blind photodetectors were fabricated using the ε-Ga₂O₃ films. The devices have an extremely low dark current (<1 pA), a high photo-to-dark current ratio (>10⁶), a maximum responsivity (>1 A/W), and the optoelectronic properties maintained stability under varying illumination intensities. This work provides valuable insights into the low-temperature synthesis of high-quality ε-Ga₂O₃ films and the development of ε-Ga₂O₃-based solar-blind photodetectors for practical applications. Full article

Terahertz (THz) waves, situated between the infrared and microwave regions, possess distinctive properties such as non-contact, high penetration, and high resolution. These properties render them highly advantageous for non-destructive thickness measurement of multilayer structural materials. In comparison with conventional ultrasound or X-ray techniques, THz thickness measurement has the capacity to acquire thickness data for multilayer structures without compromising the integrity of the specimen and is characterized by its environmental sustainability. The extant THz thickness measurement techniques principally encompass time-domain spectroscopy, frequency-domain spectroscopy, and model-based inversion and deep learning methods. A variety of methodologies have been demonstrated to possess complementary advantages in addressing subwavelength-scale thin layers, overlapping multilayer interfaces, and complex environmental interferences. These methodologies render them suitable for a range of measurement scenarios and precision requirements. A wide range of technologies related to this field have been applied in various disciplines, including aerospace thermal barrier coating inspection, semiconductor process monitoring, automotive coating quality assessment, and oil film thickness monitoring. The ongoing enhancement in system integration and continuous algorithm optimization has led to significant advancements in THz thickness measurement, propelling it towards high resolution, real-time performance, and intelligence. This development offers a wide range of engineering applications with considerable potential for future growth and innovation. Full article

Zinc oxide (ZnO) thin films were deposited by radio-frequency reactive magnetron sputtering at a cryogenic substrate temperature of −78 °C to explore a novel low-thermal-budget route for semiconductor growth. Despite the extremely low temperature, X-ray diffraction revealed spontaneous partial crystallization of wurtzite ZnO upon warming to room temperature, driven by strain relaxation and stress coupling at the ZnO/SiO₂ interface. Atomic-force and scanning-electron microscopies confirmed nanoscale hillock and ridge morphologies that correlate with in-plane compressive stress and out-of-plane tensile strain. Spectroscopic ellipsometry, modeled using a general oscillator (GO) mathematical model approach, determined a film thickness of 60.81 nm, surface roughness of 3.75 nm, and a direct optical bandgap of 3.40 eV. Photoluminescence spectra exhibited strong near-band-edge emission modulated with LO-phonon replicas at 300 K, indicating robust exciton–phonon coupling. This study demonstrates that ZnO films grown at cryogenic conditions can undergo substrate-induced self-crystallize upon warming, which eliminates the need for thermal annealing. The introduced cryogenic self-crystallization regime offers a new pathway for depositing crystalline semiconductors on thermally sensitive or flexible substrates where heating is undesirable, enabling future optoelectronic and photonic device fabrication under ultra-low thermal-budget conditions. Full article

Polymeric semiconductors have rapidly evolved from early conductive polymers, such as polyacetylene, to high-performance donor–acceptor copolymers, offering a unique combination of mechanical flexibility, solution processability, and tunable optoelectronic properties. These advancements have positioned polymeric semiconductors as versatile materials for next-generation electronics, including wearable, stretchable, and bio-integrated devices, IoT systems, and soft robotics. In this review, we systematically present the fundamental principles of polymeric semiconductors, including electronic structure, charge transport mechanisms, molecular packing, and solid-state morphology, and elucidate how these factors collectively govern device performance. We further discuss recent advances in synthesis strategies, thin-film processing techniques, molecular doping, and interface engineering, emphasizing their critical roles in improving operational stability, charge-carrier mobility, and energy efficiency. Key applications—such as organic photovoltaics, field-effect transistors, neuromorphic devices, and memristors—are analyzed, with a focus on the intricate structure–property–performance relationships that dictate functionality. Finally, we highlight emerging directions and scientific innovations, including sustainable and degradable polymers, hybrid and two-dimensional polymer systems, and novel strategies to enhance device stability and performance. By integrating fundamental polymer science with device engineering, this review provides a comprehensive, structured, and forward-looking perspective, identifying knowledge gaps and offering insights to guide future breakthroughs and the rational design of high-performance, multifunctional, and environmentally responsible polymeric electronic devices. Full article

We have fabricated amorphous tin oxide (a-SnO_x) thin-film transistors (TFTs) with Al₂O₃ gate insulator from deep eutectic solvents (DESs). DESs were formed using the chloride derivates of each precursor (SnCl₂, or AlCl₃) mixed with urea. The DESs were then used as precursors for the semiconductor and dielectric. Our target was to form extremely thin semiconductor film, and a sufficient high capacitance insulator. We characterized the physical and chemical properties of the DES-derived thin films by X-ray diffraction (XRD), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). We could evaluate that the highest content of metal–oxygen bonds was from the DES condition SnCl₂–urea = 1:3. At a low 300 °C budget temperature, we could fabricate a 3.2 nm thick a-SnO_x layer and 30 nm thick Al₂O₃, from which the TFT demonstrated a mobility of 80 ± 17 cm²/Vs, threshold voltage of −0.29 ± 0.06 V, and subthreshold swing of 88 ± 11 mV/dec. The proposed process is adequate with the back-end of the line (BEOL) process, but it is also eco-friendly because of the use of DESs. Full article

The development of metal nanostructures on large-area Gallium Nitride (GaN) surfaces has the potential to enable new, low-cost technologies for III-N semiconductor layer nanostructuring. Self-assembled nanostructures are typically formed through the thermal activation of solid-state dewetting (SSD) in thin metal layers. However, such thermal processing can induce degradation of the metal-GaN material system. This comprehensive study investigated the thermal stability of thin metal films on GaN surfaces, focusing on their morphology and nanostructuring for high-temperature processing. The research expands and systematizes the understanding of the thin metal layers on GaN surface interactions at high temperatures by categorizing metals based on their behaviour: those that exhibit self-assembly, those that catalyze GaN decomposition, and those that remain thermally stable. Depending on the annealing temperature and metal type, varying degrees of GaN layer decomposition were observed, ranging from partial surface modification to significant volumetric degradation of the material. A wide range of metals was investigated: Au, Ag, Pt, Ni, Ru, Mo, Ti, Cr, V, Nb. These materials were selected based on criteria such as high work function and chemical resistance. In this studies metal layers with a target thickness of 10 nm deposited by vacuum evaporation on 2.2 $\mathsf{\mu }$m thick GaN layers grown by metal organic vapor phase epitaxy were applied. The surface morphology and composition were analyzed using AFM, SEM, EDS, and Raman spectroscopy measurement techniques. Full article

Nanoimprint lithography (NIL) is a high-resolution parallel patterning method based on molding. It has proven resolution down to the nanometer range and can be scaled up for large areas and high throughput. Its main characteristic is that the surface pattern of a mold is imprinted on a material that is displaced locally by using the difference in hardness of the mold and the moldable material, thus replicating its surface topography. This can be achieved by shaping a thermoplastic film by heating and cooling (T-NIL) or a photosensitive resin followed by a curing process for hardening (UV-NIL). In lithography, the local thickness contrast of the thin molded film can be used as a masking layer to transfer the pattern onto the underlying substrate. Therefore, NIL will be an alternative in fields in which electron-beam lithography and photolithography do not provide sufficient resolution at reasonable throughput. Direct imprint enables applications where a modified functional surface is needed without pattern transfer. NIL is currently used for high-volume manufacturing in different applications, like patterned sapphire substrates, wire grid polarizers, photonic devices, lightguides for AR/VR devices, metalenses, and biosensors for DNA analysis, and is being tested for semiconductor integrated circuit chips. Full article

The emission of greenhouse gases from fossil fuels creates devastating effects on Earth’s atmosphere. Therefore, a clean energy source is required to fulfill the energy demand. Hydrogen is considered an energy vector, and the production of green hydrogen is a promising approach. Photoelectrochemical (PEC) water splitting is the best approach to produced green hydrogen, but the efficiency is low. To produce hydrogen by PEC splitting water, semiconductor photocatalysts have received an enormous amount of academic research in recent years. A new class of co-catalysts based on transition metals has emerged as a powerful tool for reducing charge transfer barriers and enhancing photoelectrochemical (PEC) efficiency. In this study, copper oxide (CuO) and tin oxide ($Sn{O}_2$) multilayer thin films were prepared by thermal evaporation to create an energy gradient between $Sn{O}_2$ and CuO semiconductors for better charge transfer. To improve the crystallinity and reduce the defects, the prepared films were annealed in a tube furnace at 400 °C, 500 °C, and 600 °C in an argon inert gas environment. XRD results showed that $Sn{O}_2$/CuO-600 °C exhibited strong peaks, indicating the transformation from amorphous to polycrystalline. SEM images showed the transformation of smooth dense film to a granular structure by annealing, which is better for charge transfer from electrode to electrolyte. Optical properties showed that the bandgap was decreased by annealing, which might be diffusion of Cu and Sn atoms at the interface. PEC results showed that the $Sn{O}_2$/CuO-600 °C heterostructure exhibits the solar light-to-hydrogen (STH%) conversion efficiency of 0.25%. Full article