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Article

Modeling the Dynamics of Electric Field-Assisted Local Functionalization in Two-Dimensional Materials

by
Fernando Borrás
1,
Julio Ramiro-Bargueño
1,
Óscar Casanova-Carvajal
2,3,
Alicia de Andrés
4,
Sergio J. Quesada
5 and
Ángel Luis Álvarez
1,*
1
Escuela de Ingeniería de Fuenlabrada, Universidad Rey Juan Carlos, 28942 Fuenlabrada (Madrid), Spain
2
Centro de Tecnología Biomédica, Campus de Montegancedo, Universidad Politécnica de Madrid, 28223 Madrid, Spain
3
Departamento de Ingeniería Eléctrica, Electrónica, Automática y Física Aplicada, Escuela Técnica Superior de Ingeniería y Diseño Industrial ETSIDI, Universidad Politécnica de Madrid, 28040 Madrid, Spain
4
Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, Cantoblanco, 28049 Madrid, Spain
5
Independent Researcher, 23006 Jaén, Spain
*
Author to whom correspondence should be addressed.
Materials 2026, 19(1), 204; https://doi.org/10.3390/ma19010204
Submission received: 12 November 2025 / Revised: 21 December 2025 / Accepted: 30 December 2025 / Published: 5 January 2026
(This article belongs to the Section Materials Simulation and Design)

Abstract

Electric field-assisted local functionalization of materials is a resist-free technique generally applied at the nanoscale, which has been understood within the paradigm of the water meniscus. Using a home-made prototype the authors applied this technique at scales compatible with the biosensor industry (tens of microns). However, interpreting these results requires a different paradigm. The expansion of the oxidized region over time in two-dimensional materials under a localized electric field is modeled from first physical principles. Boltzmann statistics is applied to the oxyanion incorporation at the perimeter of the oxidized zone, and a new general relation between oxide radius and time is formulated. It includes the reduction in the energy barrier due to the field effect and its dependence on the oxide radius. To gain insight into this dependence whatever the layers structure, 2D material involved, or electrical operating conditions, simple structures based on multilayer stacks representing the main constituents are proposed, where the Poisson equation is solved using finite element calculations. This enables to derive energy barriers for oxyanion incorporation at varying spot radii which are consistent with those resulting from fitting experimental data. The reasonable agreement obtained provides researchers with a new tool to predict the evolution of local functionalization of 2D layers as a function of the following fabrication parameters: time, applied voltage, and relative humidity, solely based on materials properties.
Keywords: 2D semiconductors; thin films; local anodic oxidation; numerical modeling; finite element calculation 2D semiconductors; thin films; local anodic oxidation; numerical modeling; finite element calculation
Graphical Abstract

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MDPI and ACS Style

Borrás, F.; Ramiro-Bargueño, J.; Casanova-Carvajal, Ó.; de Andrés, A.; Quesada, S.J.; Álvarez, Á.L. Modeling the Dynamics of Electric Field-Assisted Local Functionalization in Two-Dimensional Materials. Materials 2026, 19, 204. https://doi.org/10.3390/ma19010204

AMA Style

Borrás F, Ramiro-Bargueño J, Casanova-Carvajal Ó, de Andrés A, Quesada SJ, Álvarez ÁL. Modeling the Dynamics of Electric Field-Assisted Local Functionalization in Two-Dimensional Materials. Materials. 2026; 19(1):204. https://doi.org/10.3390/ma19010204

Chicago/Turabian Style

Borrás, Fernando, Julio Ramiro-Bargueño, Óscar Casanova-Carvajal, Alicia de Andrés, Sergio J. Quesada, and Ángel Luis Álvarez. 2026. "Modeling the Dynamics of Electric Field-Assisted Local Functionalization in Two-Dimensional Materials" Materials 19, no. 1: 204. https://doi.org/10.3390/ma19010204

APA Style

Borrás, F., Ramiro-Bargueño, J., Casanova-Carvajal, Ó., de Andrés, A., Quesada, S. J., & Álvarez, Á. L. (2026). Modeling the Dynamics of Electric Field-Assisted Local Functionalization in Two-Dimensional Materials. Materials, 19(1), 204. https://doi.org/10.3390/ma19010204

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