Search Results (30)

CdTe nanocrystals (NCs) have emerged as a promising active layer for efficient thin-film solar cells due to their outstanding optical properties and simple processing techniques. However, the low hole concentration and high resistance in the CdTe NC active layer lead to high carrier recombination in the back contact. Herein, we developed a novel 2-iodothiophene as a wet etching solution to treat the surface of CdTe NC. We found that surface treatment using 2-iodothiophene leads to reduced interface defects and improves carrier mobility simultaneously. The surface properties of CdTe NC thin films after iodide salt treatment are revealed through surface element analysis, space charge limited current (SCLC) studies, and energy level investigations. The CdTe NC solar cells with 2-iodothiophene treatment achieved power conversion efficiency (PCE) of 4.31% coupled with a higher voltage than in controlled devices (with NH₄I-treated ones, 3.08% PCE). Full article

Memristors with resistive switching capabilities are vital for information storage and brain-inspired computing, making them a key focus in current research. This study demonstrates non-volatile analog resistive switching behavior in Al/TiO_x/TiN/Si(n⁺⁺)/Al memristive devices. Analog resistive switching offers gradual, controllable conductance changes, which are essential for mimicking brain-like synaptic behavior, unlike digital/abrupt switching. The amorphous titanium oxide (TiO_x) active layer was deposited using the pulsed-DC reactive magnetron sputtering technique. The impact of increasing the oxide thickness on the electrical performance of the memristors was investigated. Electrical characterizations revealed stable, forming-free analog resistive switching, achieving endurance beyond 300 DC cycles. The charge conduction mechanisms underlying the current–voltage (I–V) characteristics are analyzed in detail, revealing the presence of ohmic behavior, Schottky emission, and space-charge-limited conduction (SCLC). Experimental results indicate that increasing the TiO_x film thickness from 31 to 44 nm leads to a notable change in the current conduction mechanism. The results confirm that the memristors have good stability (>1500 s) and are capable of exhibiting excellent long-term potentiation (LTP) and long-term depression (LTD) properties. The analog switching driven by oxygen vacancy-induced barrier modulation in the TiO_x/TiN interface is explained in detail, supported by a proposed model. The remarkable switching characteristics exhibited by the TiO_x-based memristive devices make them highly suitable for artificial synapse applications in neuromorphic computing systems. Full article

Aluminum nitride (AlN) thin films were deposited on SiO₂ substrates by RF-magnetron sputtering at varying powers (110–140 W) and subsequently subjected to thermal annealing at 450 °C under nitrogen atmosphere. A comprehensive multi-technique investigation—including X-ray reflectometry (XRR), X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), optical profilometry, spectroscopic ellipsometry (SE), and electrical measurements—was performed to explore the physical structure, morphology, and optical and electrical properties of the films. The analysis of the film structure by XRR revealed that increasing sputtering power resulted in thicker, denser AlN layers, while thermal treatment promoted densification by reducing density gradients but also induced surface roughening and the formation of island-like morphologies. Optical studies confirmed excellent transparency (>80% transmittance in the near-infrared region) and demonstrated the tunability of the refractive index with sputtering power, critical for optoelectronic applications. The electrical characterization of Au/AlN/Al sandwich structures revealed a transition from Ohmic to trap-controlled space charge limited current (SCLC) behavior under forward bias—a transport mechanism frequently present in a material with very low mobility, such as AlN—while Schottky conduction dominated under reverse bias. The systematic correlation between deposition parameters, thermal treatment, and the resulting physical properties offers valuable pathways to engineer AlN thin films for next-generation optoelectronic and high-frequency device applications. Full article

Highly (0002)-oriented Al_1−xSc_xN thin films with different Sc doping concentrations (x = 0, 0.2, 0.25, 0.3, and 0.43) were prepared via a magnetron sputtering system. The effects of Sc doping on the crystal structure and electrical property of the as-prepared thin films were investigated experimentally. The results of synchrotron radiation grazing-incidence wide-angle X-ray scattering (GIWAXS) and X-ray diffraction (XRD) demonstrated that the Sc³⁺ substitution for Al³⁺ induced asymmetric lattice distortion: the a-axis exhibited monotonic expansion (reaching 3.46 Å at x = 0.43) due to the larger atomic radius of Sc (~0.87 Å), while the c-axis attained a maximum value of 5.14 Å at x = 0.2 and subsequently contracted as the bond angle reduction became dominant. The dielectric constant increased to 34.67 (225% enhancement) at x = 0.43, attributed to the enhanced polarization of Sc-N bonds and interfacial charge accumulation effects. Simultaneously, the dielectric loss increased from 0.15% (x = 0) to 6.7% (x = 0.43). Leakage current studies revealed that high Sc doping (x = 0.43) elevated the leakage current density to 10⁻⁶ A/cm² under an electric field of 0.2 MV/cm, accompanied by a transition from Ohmic conduction to space-charge-limited current (SCLC) at a low electric field strength (<0.072 MV/cm). Full article

Space charge injection in polypropylene (PP) significantly weakens the stability of HVDC cables. Impact polypropylene copolymer (IPC) is often used as insulation material for AC cables, but in the DC field, IPC has the problem of space charge accumulation. This is because there is a multi-phase structure inside the IPC to which ethylene monomer was added in the production process, and the difference in physicochemical properties of each phase is an important reason for the accumulation of space charge inside the material. In this work, the vinyl phases and propenyl phases of two types of IPC were separated. The film samples were prepared and tested at 30 °C and 50 °C for DC electrical conductivity, and at 30 °C, 50 °C, and 80 °C for space charge. The experimental results show that the DC conductivity of vinyl phases is significantly higher than that of propenyl phases in both types of IPC. The degrees of mismatch between the DC conductivity of vinyl phase and that of propenyl phase are different in the two types of IPC, and the mismatch degree of DC conductivity is from several times to hundreds of times. The conductivity of the two vinyl samples is ohmic. The conductivity of the two propenyl phases shows nonlinearity under different electric field intensity, and the mismatch degree of the two phases increases with temperature. Compared to untreated IPC, at all test temperatures, the maximum space charge density of the propenyl samples is much lower, which can be reduced by about 1/3 at 50 °C and by about 50% at 80 °C. The density of heteropolar charge produced by impurity ionization in the samples and the depth of electrode injection both decreased. At each temperature, the distortion rate of the electric field in propenyl samples is lower than that in IPC, the distortion rate can be reduced by more than 15%, and the distortion rate can be reduced by nearly half at 80 °C. The charge dissipation characteristic of propenyl samples during depolarization is also optimized compared with IPC samples, the time required for charge dissipation to reach stability is shortened, and the residual charge density in the sample is reduced at the end of depolarization. In addition, the relevance between the variation of DC conductivity of phases and space charge characteristics was discussed according to SCLC (space charge limited current) theory. This work provides a feasible reference for the manufacture of high-reliability polypropylene-based cable material with excellent insulation performance. Full article

Interfacial engineering is of great concern in photovoltaic devices. Metal halide perovskite solar cells (PSCs) have garnered much attention due to their impressive development in power conversion efficiencies (PCEs). Benefiting from high electron mobility and good energy-level alignment with perovskite, aqueous SnO₂ as an electron transport layer has been widely used in n-i-p perovskite solar cells. However, the interfacial engineering of an aqueous SnO₂ layer on PSCs is still an obscure and confusing process. Herein, we proposed the preparation of n-i-p perovskite solar cells with different concentrations of SnO₂ as electron transport layers and achieved optimized PCE with an efficiency of 20.27%. I Interfacial engineering with regard to the SnO₂ layer is investigated by observing the surface morphology, space charge-limited current (SCLC) with the use of an electron-only device, and time-resolved photoluminescence (TRPL) of perovskite films. Full article

Ternary organic solar cells contain a single three-component photoactive layer with a wide absorption window, achieved without the need for multiple stacking. However, adding a third component into a well-known binary blend can influence the energetics, optical window, charge carrier transport, crystalline order and conversion efficiency. In the form of binary blends, the low-bandgap regioregular polymer donor poly(3-hexylthiophene-2,5-diyl), known as P3HT, is combined with the acceptor PC₆₁BM, an inexpensive fullerene derivative. Two different non-fullerene acceptors (ITIC and eh-IDTBR) are added to this binary blend to form ternary blends. A systematic comparison between binary and ternary systems was carried out as a function of the thermal annealing temperature of organic layers (100 °C and 140 °C). The power conversion efficiency (PCE) is improved due to increased fill factor (FF) and open-circuit voltage (V_oc) for thermal-annealed ternary blends at 140 °C. The transport properties of electrons and holes were investigated in binary and ternary blends following a Space-Charge-Limited Current (SCLC) protocol. A favorable balanced hole–electron mobility is obtained through the incorporation of either ITIC or eh-IDTBR. The charge transport behavior is correlated with the bulk heterojunction (BHJ) morphology deduced from atomic force microscopy (AFM), contact water angle (CWA) measurement and 2D grazing-incidence X-ray diffractometry (2D-GIXRD). Full article

This work presents the evaluation of the electrical behavior of a flexible photoconductor with a planar heterojunction architecture made up of organic semiconductor films deposited by high vacuum evaporation. The heterojunction was characterized in its morphology and mechanical properties by scanning electron microscopy and atomic force microscopy. The electrical characterization was carried out through the approximations of ohmic and SCLC (Space-Charge Limited Current) behaviors using experimental J–V (current density–voltage) curves at different voltages and under different light conditions. The optimization of the photoconductor was carried out through annealing and accelerated lighting processes. With these treatments, the Knoop Hardness of the flexible photoconductor has reached a value of 8 with a tensile strength of 5.7 MPa. The ohmic and SCLC approximations demonstrate that the unannealed device has an ohmic behavior, whereas the annealed device has an SCLC behavior, and after the optimization process, an ohmic behavior and a maximum current density of 0.34 mA/mm² were obtained under blue light. The approximations of the device’s electron mobility (${\mu }_n$) and free carrier density ($n_0$) were performed under different light conditions, and the electrical activation energy and electrical gap were obtained for the flexible organic device, resulting in appropriate properties for these applications. Full article

Charge injection and conduction are fundamental phenomena that occur in dielectric materials when subjected to both low and high electric fields. This paper delves into the exploration of various conduction mechanisms, including space-charge-limited current (SCLC), Schottky charge injection, Poole–Frenkel, and hopping charge conduction, to elucidate the prevailing conduction mechanism in single and multilayer polyimide (PI)/SiO₂ nanocomposite films across a range of temperatures. At elevated electric field strengths, the conduction behavior transitions from ohmic to exhibiting a non-linear current–voltage dependence. The investigation highlights that PI nanocomposite films display distinct conduction behaviors contingent on both the applied electric field and temperature conditions. The insights derived from this study provide valuable empirical groundwork and explanations for conducting current measurements in PI-based insulation systems, particularly in applications such as motor insulation for electric vehicles. Full article

The functionalization of the aromatic backbone allows the improvement of the electrical properties of acene molecules in the amorphous layered structures of organic thin films. In the present work, we discuss the electric properties of the stable, amorphous, vacuum-deposited films prepared from five highly substituted 10-RO-acenes of various electronic properties, i.e., two extreme electron-donor (1,3-dioxa-cyclopenta[b]) anthracenes with all RO substituents, two anthracene carbaldehydes and one benzo[b]carbazole carbaldehyde possessing both electron-donor and acceptor substituents. The hole mobility data were obtained using subsequent steady state space charge limited currents (SCLC) and Time of Flight (TOF) measurements, performed on the same sample and these were then compared with the results of theoretical hole mobility calculations obtained using the Density Functional Theory (DFT) quantum—chemical calculations using the Marcus–Hush theory. The study shows a good agreement between the theoretical and experimental values which allows for the quick and quantitative estimation of Einstein’s mobility values for highly substituted 10-RO anthracene and benzo[b]carbazole based on chemical calculations. This agreement also proves that the transport of holes follows the hopping mechanism. The theoretical calculations indicate that the reorganization energy plays a decisive role in the transport of holes in the amorphous layers of highly substituted hetero(acenes). Full article

The heavy ion radiation response and degradation of SiC junction barrier Schottky (JBS) diodes with different P+ implantation intervals (S) are studied in detail. The experimental results show that the larger the S, the faster the reverse leakage current increases, and the more serious the degradation after the experiment. TCAD simulation shows that the electric field of sensitive points directly affects the degradation rate of devices with different structures. The large transient energy introduced by the heavy ion impact can induce a local temperature increase in the device resulting in lattice damage and the introduction of defects. The reverse leakage current of the degraded device is the same at low voltage as before the experiment, and is gradually dominated by space-charge-limited-conduction (SCLC) as the voltage rises, finally showing ballistic transport characteristics at high voltage. Full article

The synthesis of four pentacoordinated organotin(IV) complexes prepared in a one-pot reaction from 2-hydroxy-1-naphthaldehyde, 2-amino-3-hydroxypyridine and organotin oxides is reported. The complexes were characterized by UV-Vis, IR, MS, ¹H, ¹³C and ¹¹⁹Sn NMR techniques. The compound based on 2,2-diphenyl-6-aza-1,3-dioxa-2-stannanaphtho[1,2-h]pyrido[3,2-d]cyclononene revealed the formation of a monomeric complex with a distorted five-coordinated molecular geometry intermediate between the trigonal bipyramidal and square pyramidal. In order to find possible applications in photovoltaic devices, hybrid films of organotin(IV) complexes embedded in poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) with graphene were deposited. The topographic and mechanical properties were examined. The film with the complex integrated into the cyclohexyl substituent has high plastic deformation, with a maximum stress of 1.69 × 10⁷ Pa and a Knoop hardness of 0.061. The lowest values of 1.85 eV for the onset gap and 3.53 eV for the energy gap were obtained for the heterostructure having the complex with the phenyl substituent. Bulk heterojunction devices were fabricated; these devices showed ohmic behavior at low voltages and a space-charge-limited current (SCLC) conduction mechanism at higher voltages. A value of 0.02 A was found for the maximum carried current. The SCLC mechanism suggests hole mobility values of between 2.62 × 10⁻² and 3.63 cm²/V^.s and concentrations of thermally excited holes between 2.96 × 10¹⁸ and 4.38 × 10¹⁸ m⁻³. Full article

Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be improved by optimizing the formation and rupture of conductive filaments. In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO₂/Al-ZnO/HfO₂) tri-layer structure device was prepared using the sol–gel method. The oxygen-rich vacancy Al-ZnO layer was inserted into the HfO₂ layers. The device had excellent RS properties, such as an excellent switch ratio of 10⁴, retention of 10⁴ s, and multi-level storage capability of six resistance states (one low-resistance state and five high-resistance states) and four resistance states (three low-resistance states and one high-resistance state) which were obtained by controlling stop voltage and compliance current, respectively. Mechanism analysis revealed that the device is dominated by ohmic conduction and space-charge-limited current (SCLC). We believe that the oxygen-rich vacancy concentration of the Al-ZnO insertion layer can improve the formation and rupture behaviors of conductive filaments, thereby enhancing the resistive switching (RS) performance of the device. Full article

The fluorination strategy is one of the most efficient and popular molecular modification methods to develop new materials for organic photovoltaic (OPV) cells. For OPV materials, it is a broad agreement that fluorination can reduce the energy level and change the morphology of active layers. To explore the effect of fluorination on small molecule acceptors, we selected two non-fullerene acceptors (NFA) based bulk heterojunction (BHJ) films, involving PM6:Y6 and PM6:Y5 as model systems. The electron mobilities of the PM6:Y5 and PM6:Y6 BHJ films are 5.76 × 10⁻⁷ cm²V⁻¹s⁻¹ and 5.02 × 10⁻⁵ cm²V⁻¹s⁻¹ from the space-charge-limited current (SCLC) measurements. Through molecular dynamics (MD) simulation, it is observed that halogen bonds can be formed between Y6 dimers, which can provide external channels for electron carrier transfer. Meanwhile, the “A-to-A” type J-aggregates are more likely to be generated between Y6 molecules, and the π–π stacking can be also enhanced, thus increasing the charge transfer rate and electron mobility between Y6 molecules. Full article

Novel heterostructures based on ferrocenium hexafluorophosphate (FcPF₆), 2,6-dihydroxyanthraquinone (DHAQ) or 2,6-diaminoanthraquinone (DAAQ), zinc phthalocyanine (ZnPc) and nylon 11 were deposited by the high-vacuum thermal evaporation (HVTE) technique. Morphological and mechanical characterizations of these organic heterostructures FcPF₆:DHAQ/nylon(ZnPc) and FcPF₆:DAAQ/nylon(ZnPc) were carried out. Subsequently, corresponding optical parameters were calculated. The heterostructure with FcPF₆:DHAQ presented the lowest optical band gap and fundamental band gap at 1.55 eV and 2.45 eV, respectively. The nylon(ZnPc) layer favors the optical behavior and places these heterostructures within organic low-bandgap semiconductor range. Additionally, devices were fabricated, and their electrical behavior was evaluated. The ITO/FcPF₆:DHAQ/nylon(ZnPc)/Ag device exhibits ohmic behavior, and the ITO/FcPF₆:DAAQ/nylon(ZnPc)/Ag device exhibits ohmic behavior at low voltages, but at V ≥ 5 V, its behavior changes to Space Charge Limited Current (SCLC). This device carries a maximum current of 0.02 A, three orders of magnitude higher than the current carried by the device with the DHAQ. The SCLC conduction mechanism showed a hole mobility of 9.27 × 10⁻⁸ (cm²)/Vs, the concentration of thermally excited holes of 3.01 × 10²³ m⁻³, and trap concentration of 3.93 × 10²¹ m⁻³. FcPF₆:DHAQ/nylon(ZnPc) and FcPF₆:DAAQ/nylon(ZnPc) are potential candidates for organic devices as an emitter layer and active layer, respectively. Full article