Recent Advances in New Generation Compound Semiconductor Based Photodetectors and Solar Cells

Dear Colleagues,

Inorganic compound semiconductors drive the rapid development in modern optoelectronics, where III-V groups, chalcogenides, and lead halide perovskites, either in their thin film and low dimensional form, showed superior functionalities in areas of lighting and lasing, IR sensing and imaging, renewable energy, etc. Though conventional thin film crystals such as InP, InGaAs, HgCdTe, etc., have been demonstrated with decent solar cell efficiency and photodetecting sensitivity, the issue of cost/abundancy or/and environmental and health impacts has been of great concern in scaled applications. Therefore, the needs of low-cost, RoHS (restriction of hazardous substances) compliant, high-performance optoelectronic technologies promote recent advances in new-generation compound semiconductor-based photodetectors and solar cells, which have been attracting broad and worldwide attention.

This Special Issue offers a platform for comprehensive research communications on the thermal topic of recent advances in new photodetector and solar cell technologies, in addressing the balance of material toxicity, fabrication cost, and performance, through the newly emerged compound semiconducting materials (e.g., perovskite, kesterite, quantum dots, 2D materials, etc.), device physics (e.g., defects, interfaces, heterostructures, etc.), and new (opto)electronic designs (e.g., neuromorphic, multifunctional, on-chip-integration, etc.).

In this Special Issue, original research articles and reviews are welcome. Research areas may include (but are not limited to) the following:

(1) Eco-friendly, earth-abundant compound semiconductors for optoelectronics;

(2) Perovskite solar cell and photodetectors;

(3) 2D materials and quantum dot-based optoelectronic devices;

(4) Exploring novel semiconductor-based materials and optoelectronic devices;

(5) Image sensors and integrated optoelectronic devices based on compound semiconductors.

Prof. Dr. Zhuoran Wang
Dr. Ying Li
Guest Editors

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