Search Results (313)

This review explores the variety of diamond-based sensing applications, emphasizing their material properties, such as high Young’s modulus, thermal conductivity, wide bandgap, chemical stability, and radiation hardness. These diamond properties give excellent performance in mechanical, pressure, thermal, magnetic, optoelectronic, radiation, biosensing, quantum, and other applications. In vibration sensing, nano/poly/single-crystal diamond resonators operate from MHz to GHz frequencies, with high quality factor via CVD growth, diamond-on-insulator techniques, and ICP etching. Pressure sensing uses boron-doped piezoresistive, as well as capacitive and Fabry–Pérot readouts. Thermal sensing merges NV nanothermometry, single-crystal resonant thermometers, and resistive/diode sensors. Magnetic detection offers FeGa/Ti/diamond heterostructures, complementing NV. Optoelectronic applications utilize DUV photodiodes and color centers. Radiation detectors benefit from diamond’s neutron conversion capability. Biosensing leverages boron-doped diamond and hydrogen-terminated SGFETs, as well as gas targets such as NO₂/NH₃/H₂ via surface transfer doping and Pd Schottky/MIS. Imaging uses AFM/NV probes and boron-doped diamond tips. Persistent challenges, such as grain boundary losses in nanocrystalline diamond, limited diamond-on-insulator bonding yield, high temperature interface degradation, humidity-dependent gas transduction, stabilization of hydrogen termination, near-surface nitrogen-vacancy noise, and the cost of high-quality single-crystal diamond, are being addressed through interface and surface chemistry control, catalytic/dielectric stack engineering, photonic integration, and scalable chemical vapor deposition routes. These advances are enabling integrated, high-reliability diamond sensors for extreme and quantum-enhanced applications. Full article

Microwave wireless power transfer (MWPT) technology has the advantages of long distance and high transmission efficiency; therefore, MWPT has many applications in aerospace, space solar power stations (SSPSs), and so on. The receiving and fixing subsystem is the core component for gathering and converting power and it is the main part of the system. If this step is both efficient and possible, the whole system will also be efficient and its success possible. This paper mainly introduces a systematic review of the key technologies, research status, and development trends of the receiving-end part in MWPT. High-performance rectifying devices are analyzed in detail, with the use of GaN Schottky barrier diodes (GaN SBDs), in addition to rectification circuits that have good rectification and impedance matching. Additionally, it compares the advantages and disadvantages of three power synthesis architectures, including RF synthesis, DC synthesis, and hybrid subarray synthesis, and proposes a strategy for optimizing power distribution through intelligent subarray partitioning. Finally, this paper looks at future development trends in receiving-end technology, including miniaturized monolithic microwave integrated circuits (MMICs) and efficient broadband reconfigurable rectification. The research presented herein offers a systematic technical reference and theoretical foundation for enhancing the performance of the receiving ends in microwave wireless power transfer systems. Full article

Due to the Von Neumann bottleneck of traditional CMOS computing, there is an urgent need to develop in-memory logic devices with low power consumption. In this work, we demonstrate ferroelectric diode devices based on the TiN/Hf_0.5Zr_0.5O₂/HfO₂/TiN structure, implementing 16 Boolean logic operations through single-step or multi-step (2–3 steps) cascade and achieving attojoule-level one-bit full-adder computation. The TiN/Hf_0.5Zr_0.5O₂/HfO₂/TiN ferroelectric diode exhibits non-destructive readout and bidirectional rectification characteristics, with the conduction mechanism following Schottky emission behavior in the on-state. Based on its bidirectional rectification characteristics, we designed and simulated the circuit scheme of 16 Boolean logic and one-bit full-adder through cascaded operations. Both the input and output logic values are represented in the form of resistance, without the need for additional form conversion circuits. The state writing is performed by pulse-controlled polarization flipping, and the state reading is non-destructive. The logic circuits in this work demonstrate superior performance with ultralow computing power consumption in simulation. This breakthrough establishes a foundation for developing energy-efficient and scalable in-memory computing systems. Full article

A vertical Ni/β-Ga₂O₃ Schottky barrier diode was fabricated on an unintentionally doped bulk (−201)-oriented β-Ga₂O₃ single crystal and investigated with a focus on the underlying photoresponse mechanisms. The device exhibits well-defined rectifying behavior, characterized by a Schottky barrier height of 1.63 eV, an ideality factor of 1.39, and a high rectification ratio of ~9.7 × 10⁶ arb. un. at an applied bias of ±2 V. The structures demonstrate pronounced sensitivity to deep-ultraviolet radiation (λ ≤ 280 nm), with maximum responsivity observed at 255 nm, consistent with the wide bandgap of β-Ga₂O₃. Under 254 nm illumination at a power density of 620 μW/cm², the device operates in a self-powered mode, generating an open-circuit voltage of 50 mV and a short-circuit current of 47 pA, confirming efficient separation of photogenerated carriers by the built-in electric field of the Schottky junction. The responsivity and detectivity of the structures increase from 0.18 to 3.87 A/W and from 9.8 × 10⁸ to 4.3 × 10¹¹ Hz^0.5cmW⁻¹, respectively, as the reverse bias rises from 0 to −45 V. The detectors exhibit high-speed performance, with rise and decay times not exceeding 29 ms and 59 ms, respectively, at an applied voltage of 10 V. The studied structures demonstrate internal gain, with the external quantum efficiency reaching 1.8 × 10³%. Full article

Wireless power transfer via RF/microwave rectifiers has emerged as a sustainable solution to the energy requirements of low-power devices. In this study, a novel four-parallel-shunt-diode ultra-wideband rectifier is proposed to enable wireless power transfer in the sub-6-GHz 5G bands. The proposed circuit maintains a power conversion efficiency (PCE) above 50% across the 1.6–5.1 GHz frequency range at 10 dBm input power and also achieves an efficiency above 50% at 3 GHz for input powers between 1 dBm and 16 dBm. Designed and fabricated on a low-cost FR4 substrate, the rectifier achieves a maximum power conversion efficiency of 76% at 2.9 GHz with a 10 dBm input power. Furthermore, a wideband impedance analysis is performed, taking into account the packaging parasitics of the HSMS-2860 diodes used in the study. Despite the use of a lossy substrate such as FR4, the proposed four-parallel-shunt-diode topology improves impedance stability and provides impedance matching over both a wide input-power range and a wide frequency band when compared with single- and double-diode structures reported in the literature. Full article

This study demonstrates the fabrication of high-performance p-Cu₂O/n-β-Ga₂O₃ heterojunction barrier Schottky (JBS) diodes using copper as a low-work-function anode metal. By optimizing the Cu₂O spacing to 4 μm, the device achieves a turn-on voltage of 0.78 V, a breakdown voltage of 1700 V, and a specific on-resistance of 5.91 mΩ·cm², yielding a power figure of merit of 0.49 GW/cm². The JBS diode also exhibits stable electrical characteristics across the temperature range of 300–425 K. Under a 200 V reverse stress for 5000 s, the JBS diode shows only a 4.16% degradation in turn-on voltage and a 1.15-fold increase in dynamic specific on-resistance variation, highlighting its excellent resistance to stress-induced degradation. These results indicate that Cu₂O/Ga₂O₃ JBS diodes are promising candidates for next-generation high-efficiency and high-voltage power electronic applications. Full article

A Si/SiC heterojunction double-trench MOSFET with improved conduction characteristics is proposed. By replacing the N+ source and P-ch regions with silicon, the device forms a Si/SiC heterojunction that exhibits Schottky-like characteristics, effectively deactivating the parasitic PiN body diode and improving third-quadrant performance. A high-k gate dielectric is incorporated to induce a strong electron accumulation layer at the heterointerface, thinning the energy barrier and enabling tunneling-dominated current transport, thereby significantly enhancing the first-quadrant performance. TCAD simulation results demonstrate that the proposed device achieves a specific on-resistance (R_on,sp) of 1.78 mΩ·cm², representing a 20.5% reduction compared to the conventional SiC DTMOS, while maintaining a comparable breakdown voltage (BV) of approximately 1380 V. A significant reduction in the third-quadrant turn-on voltage (V_on) is achieved with the proposed structure, from 2.74 V to 1.53 V. Meanwhile, the unipolar conduction mechanism similar to that of Schottky effectively suppresses bipolar degradation. To enhance device reliability, the design incorporates a trenched source and heavily doped P-well, which collectively mitigate high electric field concentrations at the trench corners. The proposed device offers an integration strategy enhancing both forward conduction and reverse conduction in high-voltage power electronics. Full article

Thanks to its excellent material properties, diamond-based power electronic devices have garnered widespread attention. The realization of large-sized (over 2 inches) and high-quality single-crystal diamond wafers has significantly accelerated the industrialization of diamond semiconductor materials and devices. Over years of development, diamond Schottky barrier diodes (SBDs) have evolved into three primary device structures: lateral conduction type, quasi-vertical conduction type, and vertical conduction type. However, the performance of these devices has yet to fully unlock the potential of diamond materials. Efficient edge termination structures need to be designed to synergistically optimize the forward turn-on voltage, on-resistance, and off-state breakdown voltage. This paper reviews the research progress on various existing edge termination structures of diamond SBDs, analyzes the advantages of each structure, and discusses the key challenges faced in the device fabrication processes. Full article

This work first analyzes the failure behaviors of P-GaN HEMTs with different gate structures (Schottky gate vs. Ohmic gate) under both forward and reverse ESD stresses. It reveals that the Schottky gate structure lacks effective electrostatic charge discharge paths, which leads to the accumulation of transient charges generated by ESD stress in the gate terminal, resulting in significant transient overvoltage and ultimately causing breakdown failure. Subsequently, the paper systematically reviews three existing unidirectional ESD protection technologies based on the P-GaN HEMT platform. While these technologies can discharge transient electrostatic charges generated by both forward and reverse ESD stresses, they operate in diode mode during reverse ESD events, exhibiting excessively low reverse triggering voltage. Furthermore, unidirectional ESD protection structures based on resistive voltage division and diode voltage division introduce substantial forward and reverse leakage currents. Finally, the article evaluates four bidirectional GaN ESD protection technologies. These bidirectional structures can likewise discharge transient charges from both forward and reverse ESD stresses. Compared to unidirectional approaches, the key advantage of bidirectional ESD protection lies in its ability to provide an appropriate reverse triggering voltage during reverse ESD events, thereby effectively clamping the reverse potential to the desired level. However, likewise, bidirectional ESD protection schemes based on resistive or diode voltage division also inevitably introduce relatively large forward and reverse leakage currents. Full article

Low-voltage power converters in the 25–200 V range are increasingly employed in emerging applications such as hybrid electric vehicles (HEVs), photovoltaic systems with battery storage, and electric propulsion systems for recreational boats. In these contexts, 48 V battery systems have become standard, due to safety considerations. Among various converter topologies, H-bridge configurations operating around 100 V DC are widely used in laboratory-scale prototyping. While MOSFETs are the preferred switching devices in this voltage range, due to their high efficiency and fast switching characteristics, they also introduce design challenges related to high current slew rates and associated overvoltage spikes caused by parasitic inductances in the PCB layout. These overvoltages, though modest in absolute terms, can be critical in low-voltage systems, due to the lower device ratings. This paper presents design strategies and layout best practice for a 120 V, 50 A H-bridge converter using 200 V rated MOSFETs. The effectiveness of various mitigation techniques—including the use of ceramic capacitors in parallel with film and electrolytic types, Schottky diodes across MOSFETs, and snubber circuits—is evaluated and experimentally validated on a dedicated prototype. The results highlight the critical role of PCB design in ensuring switching reliability and device protection in low-voltage converter systems. In addition, with the design solutions shown in this study, it was possible to obtain a voltage overshoot during switching of just 165 V with a 120 V DC-link voltage, which guarantees a sufficient safety margin for the MOSFET rated voltage. Full article

This paper presents an enhanced non-isolated single-switch quadratic boost DC-DC converter. The proposed topology employs a single active switch, two inductors, two capacitors, and three diodes. The proposed design improves system reliability by replacing one of the active switches in a conventional cascaded boost converter with a diode. Two key features of this converter are its single switch, which simplifies operation, and the use of a lifting capacitor for voltage step-up. The reduced switch count and the use of Schottky diodes minimize switching losses and enhance overall efficiency. Comprehensive theoretical steady-state analysis under continuous conduction mode (CCM) is carried out to characterize the converter’s performance. Notably, at a 50% duty cycle, the converter achieves a voltage gain of four, while at a 70% duty cycle, it can reach a voltage gain of approximately 11. The proposed topology is validated through extensive simulations in MATLAB/Simulink (2023). In addition, a prototype with a 5 V input and 20 V output at a switching frequency of $50\mathrm{kHz}$ was constructed and tested. The experimental unit achieved an efficiency of about 85% at a 5 V input. The results confirm that the converter achieves high voltage gain and improved efficiency, making it well-suited for IoT and energy harvesting applications. Full article

The energy deposition process for the main components of SIC Schottky diodes is simulated based on Geant4. Particle bombardment results were simulated under different angles, target materials and doping concentrations on the same target material for different light particles and heavy ions, and then the Linear Energy Transfer of SiC materials and external conditions that affect LET are obtained. The results show that the LET value of protons exhibits significant oscillations at low energy incidence, gradually decreasing exponentially after 10⁻¹ MeV. Alpha particles have a LET peak near 1 MeV, while beta particles show an exponential decrease. The LET values at low energy levels increase exponentially, while at high energy levels, the LET values show a similar linear relationship with energy. For different incident angles, the average LET value of protons in the low-level region gradually increases as the incident angle increases. The average LET value of protons in the remaining energy ranges is less affected by angle; the incident angle has no significant effect on the LET distribution of alpha particles within the full spectrum range. The results provide important references for understanding the energy deposition process and LET distribution of silicon carbide devices under single-particle interaction. Full article

A nonlinear state-space model for Schottky diode rectifiers is presented that incorporates junction dynamics, layout parasitic effects, and electromagnetic coupling effects. Unlike prior approaches, the model resolves conduction intervals under harmonic-rich excitation and integrates electromagnetic voltage–current feedback to capture field-induced perturbations at high frequencies. The framework was validated through the design of a 5.8 GHz rectifier, achieving 62% RF–DC efficiency at −10 dBm into a 500 Ω load, with close agreement between the simulation and measurement. The results confirm the model’s predictive accuracy and its utility for high-efficiency rectenna systems in microwave and terahertz applications. Full article

Raman thermometry is a powerful technique for sub-microscale thermal measurements on semiconductor-based devices, provided that the active region remains accessible and is not obscured by metallization. Since pure metals do not exhibit Raman scattering, traditional Raman thermometry becomes ineffective in such cases. To overcome this limitation, we propose the use of atomically thin Two-Dimensional materials as local temperature sensors. These materials generate Raman spectra at the nanoscale, enabling highly precise absolute surface temperature measurements. In this study, we investigate the feasibility and effectiveness of this approach by applying it to power devices, including a calibrated gold resistor and an SiC Junction Barrier Schottky (JBS) diode. We assess the processing challenges and measurement reliability of 2D materials for thermal characterization. To validate our findings, we complement Raman thermometry with thermoreflectance measurements, which are well suited for metallized surfaces. For example, on the serpentine resistor, Raman thermometry applied to the 2D material yielded a thermal resistance of 22.099 °C/W, while thermoreflectance on the metallic surface measured 21.898 °C/W. This close agreement suggests good thermal conductance at the metal/2D material interface. The results demonstrate the potential of integrating 2D materials as effective nanoscale temperature probes, offering new insights into thermal management strategies for advanced electronic components. Additionally, thermal simulations are conducted to further analyze the thermal response of these devices under operational conditions. Furthermore, we investigate two 2D material integration methods, transfer and direct growth, and evaluate them through measured thermal resistances for the SiC JBS diode, highlighting the influence of the deposition technique on thermal performance. Full article

Diamond, renowned for its exceptional electrical, physical, and chemical properties, including ultra-wide bandgap, superior hardness, high thermal conductivity, and unparalleled stability, serves as an ideal candidate for next-generation high-power and high-temperature electronic devices. Among diamond-based devices, Schottky barrier diodes (SBDs) have garnered significant attention due to their simple architecture and superior rectifying characteristics. This review systematically summarizes recent advances in diamond SBDs, focusing on both metal–semiconductor (MS) and metal–interlayer–semiconductor (MIS) configurations. For MS structures, we critically analyze the roles of single-layer metals (including noble metals, transition metals, and other metals) and multilayer metals in modulating Schottky barrier height (SBH) and enhancing thermal stability. However, the presence of interface-related issues such as high densities of surface states and Fermi level pinning often leads to poor control of the SBH, limiting device performance and reliability. To address these challenges and achieve high-quality metal/diamond interfaces, researchers have proposed various interface engineering strategies. In particular, the introduction of interfacial layers in MIS structures has emerged as a promising approach. For MIS architectures, functional interlayers—including high-k materials (Al₂O₃, HfO₂, SnO₂) and low-work-function materials (LaB₆, CeB₆)—are evaluated for their efficacy in interface passivation, barrier modulation, and electric field control. Terminal engineering strategies, such as field-plate designs and surface termination treatments, are also highlighted for their role in improving breakdown voltage. Furthermore, we emphasize the limitations in current parameter extraction from current–voltage (I–V) properties and call for a unified new method to accurately determine SBH. This comprehensive analysis provides critical insights into interface engineering strategies and evaluation protocols for high-performance diamond SBDs, paving the way for their reliable deployment in extreme conditions. Full article