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Volume 25
Issue 22
10.3390/s25226974
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This is an early access version, the complete PDF, HTML, and XML versions will be available soon.
Review

Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes

by
Genzhuang Li
1,2,
Wang Lin
3,4,
Shishuai Liu
1,2,
Yeldos Aileplanm
1,2,
Aochen Du
1,2,* and
Liuan Li
5,*
1
Xinjiang Laboratory of Phase Transitions and Microstructures in Condensed Matter Physics, College of Physical Science and Technology, Yili Normal University, Yining 835000, China
2
Yili Engineering Research Center of Green Silicon-Based Materials, College of Physical Science and Technology, Yili Normal University, Yining 835000, China
3
Tianjin San’an Optoelectronics Co., Ltd., Tianjin 300384, China
4
Tianjin Key Laboratory of Semiconductor Light Emitting Diode Chip Enterprises, Tianjin 300384, China
5
State Key Laboratory of High Pressure and Superhard Materials, College of Physics, Jilin University, Changchun 130012, China
*
Authors to whom correspondence should be addressed.
Sensors 2025, 25(22), 6974; https://doi.org/10.3390/s25226974
Submission received: 3 October 2025 / Revised: 10 November 2025 / Accepted: 13 November 2025 / Published: 14 November 2025
(This article belongs to the Special Issue Semiconductor and Functional Materials Based Sensors for the Infrared and the Terahertz Waves: Recent Developments and Applications)
Versions Notes

Abstract

Thanks to its excellent material properties, diamond-based power electronic devices have garnered widespread attention. The realization of large-sized (over 2 inches) and high-quality single-crystal diamond wafers has significantly accelerated the industrialization of diamond semiconductor materials and devices. Over years of development, diamond Schottky barrier diodes (SBDs) have evolved into three primary device structures: lateral conduction type, quasi-vertical conduction type, and vertical conduction type. However, the performance of these devices has yet to fully unlock the potential of diamond materials. Efficient edge termination structures need to be designed to synergistically optimize the forward turn-on voltage, on-resistance, and off-state breakdown voltage. This paper reviews the research progress on various existing edge termination structures of diamond SBDs, analyzes the advantages of each structure, and discusses the key challenges faced in the device fabrication processes.
Keywords: diamond; Schottky barrier diodes; edge termination structures; power electronic devices diamond; Schottky barrier diodes; edge termination structures; power electronic devices

Share and Cite

MDPI and ACS Style

Li, G.; Lin, W.; Liu, S.; Aileplanm, Y.; Du, A.; Li, L. Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes. Sensors 2025, 25, 6974. https://doi.org/10.3390/s25226974

AMA Style

Li G, Lin W, Liu S, Aileplanm Y, Du A, Li L. Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes. Sensors. 2025; 25(22):6974. https://doi.org/10.3390/s25226974

Chicago/Turabian Style

Li, Genzhuang, Wang Lin, Shishuai Liu, Yeldos Aileplanm, Aochen Du, and Liuan Li. 2025. "Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes" Sensors 25, no. 22: 6974. https://doi.org/10.3390/s25226974

APA Style

Li, G., Lin, W., Liu, S., Aileplanm, Y., Du, A., & Li, L. (2025). Recent Developments and Challenges of Edge Termination Techniques for Vertical Diamond Schottky Barrier Diodes. Sensors, 25(22), 6974. https://doi.org/10.3390/s25226974

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