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21 pages, 4277 KB  
Article
Microfluidic Interrogation of Chitin-Induced Calcium Oscillations in the Moss Physcomitrium patens
by Vanessa Kamara, James Teague, Kathryn E. Pagano, Luis Vidali and Dirk R. Albrecht
Plants 2026, 15(4), 582; https://doi.org/10.3390/plants15040582 - 12 Feb 2026
Viewed by 542
Abstract
Plants defend against pathogens such as fungi by initiating coordinated structural and chemical responses. Pathogen perception triggers rapid cytosolic calcium influx and calcium oscillations that drive defense gene expression, yet the mechanisms by which these signals encode stressor intensity and propagate systematically remain [...] Read more.
Plants defend against pathogens such as fungi by initiating coordinated structural and chemical responses. Pathogen perception triggers rapid cytosolic calcium influx and calcium oscillations that drive defense gene expression, yet the mechanisms by which these signals encode stressor intensity and propagate systematically remain unclear. Here, we present a microfluidic system to characterize intracellular calcium dynamics in protonemal colonies of the moss Physcomitrium patens (Hedw.) upon precise and reversible exposure to fungal chitin oligosaccharides. Epifluorescent imaging of cells expressing the calcium indicator GCaMP6f revealed a rapid, coordinated calcium response to chitin addition, followed by stereotyped oscillations that subsided quickly upon stimulus removal. We implemented an unbiased image segmentation algorithm using pixel-based k-means clustering to automatically locate regions with specific oscillatory signatures. Calcium dynamics were distinct across adjacent cells, distinguishable by cell type, and significantly modulated by circadian rhythm, adaptation time within the device, and stimulus timing. Cytosolic calcium oscillations, which rose and fell symmetrically within about 60 s, occurred spontaneously during the subjective night and following short adaptation periods. Chitin elicited strong oscillations with increased frequency, amplitude, and duration, and repeated pulses entrained regular, colony-wide oscillations at the stimulation interval. This study complements prior investigations of whole plant and growth tip dynamics and provides a quantitative framework to study calcium signaling in plants, including mechanisms of signal propagation and the role of oscillation frequency on gene expression. Full article
(This article belongs to the Special Issue Microscopy Techniques in Plant Studies—2nd Edition)
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13 pages, 10056 KB  
Article
An Electrical Equivalent Model of an Electromembrane Stack with Fouling Under Pulsed Operation
by Pablo Yáñez, Hector Ramirez and Alvaro Gonzalez-Vogel
Membranes 2026, 16(1), 42; https://doi.org/10.3390/membranes16010042 - 16 Jan 2026
Viewed by 530
Abstract
This study introduces a novel hybrid model for an electromembrane stack, unifying an equivalent electrical circuit model incorporating specific resistance (RM,Rs) and capacitance (Cgs,Cdl) parameters with an empirical fouling [...] Read more.
This study introduces a novel hybrid model for an electromembrane stack, unifying an equivalent electrical circuit model incorporating specific resistance (RM,Rs) and capacitance (Cgs,Cdl) parameters with an empirical fouling model in a single framework. The model simplifies the traditional approach by serially connecting N (N=10) ion exchange membranes (anionic PC-SA and cationic PC-SK) and is validated using NaCl and Na2SO4 solutions in comparison with laboratory tests using various voltage signals, including direct current and electrically pulsed reversal operations at frequencies of 2000 and 4000 Hz. The model specifically accounts for the chemical stratification of the cell unit into bulk solution, diffusion, and Stern layers. We also included a calibration method using correction factors (αi) to fine-tune the electrical current signals induced by voltage stimulation. The empirical component of the model uses experimental data to simulate membrane fouling, ensuring consistency with laboratory-scale desalination processes performed under pulsed reversal operations and achieving a prediction error of less than 10%. In addition, a comparative analysis was used to assess the increase in electrical resistance due to fouling. By integrating electronic and empirical electrochemical data, this hybrid model opens the way to the construction of simple, practical, and reliable models that complement theoretical approaches, signifying an advance for a variety of electromembrane-based technologies. Full article
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10 pages, 1516 KB  
Article
Polymer Electrolyte-Gated Organic Electrochemical Transistors for Bioinspired Neuromorphic Computing
by Banghua Wu, Lin Gao, Yujie Peng, Changjian Liu, Canghao Xu, Haihong Guo, Yong Huang and Junsheng Yu
Chemosensors 2025, 13(12), 428; https://doi.org/10.3390/chemosensors13120428 - 9 Dec 2025
Viewed by 1028
Abstract
Organic electrochemical transistors (OECTs) are compelling artificial synapses because mixed ionic–electronic coupling and transport enables low-voltage, analog weight updates that mirror biological plasticity. Here, we engineered solid-state, polymer electrolyte-gated vertical OECTs (vOECTs) and elucidate how electrolyte molecular weight influences synaptic dynamics. Using Pg2T-T [...] Read more.
Organic electrochemical transistors (OECTs) are compelling artificial synapses because mixed ionic–electronic coupling and transport enables low-voltage, analog weight updates that mirror biological plasticity. Here, we engineered solid-state, polymer electrolyte-gated vertical OECTs (vOECTs) and elucidate how electrolyte molecular weight influences synaptic dynamics. Using Pg2T-T as the redox-active channel and pDADMAC polymer electrolytes spanning low- (~100 k), medium- (~300 k), and high- (~500 k) molecular weights, cyclic voltammetry reveals reversible Pg2T-T redox, while peak separation and current density systematically track ion transport kinetics. Increasing electrolyte molecular weight enlarges the transfer curve hysteresis (memory window ΔV_mem from ~0.15 V to ~0.50 V) but suppresses on-current, consistent with slower, more confining ion motion and stabilized partially doped states. Devices exhibit rich short- and long-term plasticity: paired-pulse facilitation (A2/A1 ≈ 1.75 at Δt = 50 ms), frequency-dependent EPSCs (low-pass accumulation), cumulative potentiation, and reversible LTP/LTD. A device-aware CrossSim framework built from continuous write/erase cycles (probabilistic LUT) supports Fashion-MNIST inference with high accuracy and bounded update errors (mean −0.02; asymmetry 0.198), validating that measured nonidealities remain algorithm-compatible. These results provide a materials-level handle on polymer–ion coupling to deterministically tailor temporal learning in compact, robust neuromorphic hardware. Full article
(This article belongs to the Section Electrochemical Devices and Sensors)
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13 pages, 4242 KB  
Article
Phase Transition Behavior and Threshold Characteristics of GeTe Thin Films Under Single-Pulse Nanosecond Laser Irradiation
by Yajing Li, Xinyu Ma, Qiang Chen, Sixian Qian, Yixuan Jiang, Yuejun Zheng and Yunqi Fu
Materials 2025, 18(23), 5466; https://doi.org/10.3390/ma18235466 - 4 Dec 2025
Viewed by 469
Abstract
Realizing the full potential of optical actuation for high-speed phase-change radio-frequency (RF) switches requires a shift to single-pulse operation. This work presents a systematic investigation of reversible phase transitions in GeTe thin films induced by single 10 ns laser pulses, utilizing spatially resolved [...] Read more.
Realizing the full potential of optical actuation for high-speed phase-change radio-frequency (RF) switches requires a shift to single-pulse operation. This work presents a systematic investigation of reversible phase transitions in GeTe thin films induced by single 10 ns laser pulses, utilizing spatially resolved characterization techniques, including atomic force microscopy (AFM) and micro-spectroscopy. Precise laser fluence windows for crystallization (12.7–16 mJ/cm2) and amorphization (25.44–41.28 mJ/cm2) are established. A critical finding is that the amorphization process is governed by rapid thermal accumulation, which creates a direct trade-off between achieving the phase transition and avoiding detrimental surface morphology. Specifically, we observe that excessive energy leads to the formation of laser-induced ridges and ablation craters, which are identified as primary causes of device performance degradation. This study elucidates the underlying mechanism of single-pulse-induced phase transitions and provides a practical processing window and design guidelines for developing high-performance, optically actuated GeTe-based RF switches. Full article
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12 pages, 1488 KB  
Article
Gate Metal Defect Screening at Wafer-Level for Improvement of HTGB in Power GaN HEMT
by Yu-Ting Chuang and Niall Tumilty
Micromachines 2025, 16(11), 1260; https://doi.org/10.3390/mi16111260 - 6 Nov 2025
Viewed by 781
Abstract
The increasing market demand for high-power and high-frequency applications necessitates the development of highly reliable Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs). While GaN offers superior performance and efficiency over traditional silicon, gate-related defects pose a significant reliability challenge, often leading to premature device [...] Read more.
The increasing market demand for high-power and high-frequency applications necessitates the development of highly reliable Gallium Nitride (GaN) High-Electron-Mobility Transistors (HEMTs). While GaN offers superior performance and efficiency over traditional silicon, gate-related defects pose a significant reliability challenge, often leading to premature device failure under stress. Traditional High-Temperature Gate Bias (HTGB) testing is effective but time-consuming and costly, particularly when defects are only identified post-packaging. This study focuses on developing an effective wafer-level screening methodology to mitigate the financial burden and reputational risk associated with late-stage defect discovery. Failure analysis of an HTGB premature failure revealed a gate metal deposition defect characterized by identical elemental composition to the bulk metal, suggesting a small-volume structural anomaly. Crucially, a comparative analysis showed that Forward Gate Current (IGON) is an insensitive screening metric due to high inherent gate leakage through the passivation layer. In contrast, the Reverse Gate Current (IGOFF) exhibited sensitivity, particularly under the tensile stress induced by package molding, which is attributed to the piezoelectric effect altering the depletion region width beneath the p-GaN gate. Based on this observation, a multi-pulse IDSS test was developed as a wafer-level screen. This method successfully amplified the subtle electrical field perturbations caused by the gate defect. After screening 231 dies using the new methodology, zero failures were recorded after 1000 h of HTGB stress, a significant improvement over the initial failure rate of 0.43% (1 out of 231). This work demonstrates that early, sensitive wafer-level screening of gate defects is indispensable for optimizing manufacturing yield and enhancing long-term device reliability. Full article
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14 pages, 47654 KB  
Article
Time Reversal Technique Experiments with a Software-Defined Radio
by Marcelo B. Perotoni and Julien Huillery
Telecom 2025, 6(4), 83; https://doi.org/10.3390/telecom6040083 - 3 Nov 2025
Viewed by 1020
Abstract
Time reversal techniques have been investigated for ultrasound and electromagnetic waves. They offer some advantages, particularly in cluttered and inhomogeneous environments, for point-to-point applications. The instrumentation usually employed for electromagnetic time reversal involves costly vector network analyzers, different interconnected generators and receivers, or [...] Read more.
Time reversal techniques have been investigated for ultrasound and electromagnetic waves. They offer some advantages, particularly in cluttered and inhomogeneous environments, for point-to-point applications. The instrumentation usually employed for electromagnetic time reversal involves costly vector network analyzers, different interconnected generators and receivers, or a base station for mobile phones. This article explores the use of a low-cost commercial software-defined radio, in frequencies between 700 MHz and 2100 MHz, with indoor tests showing its performance and observed voltage gains for the received pulse. Full article
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19 pages, 3502 KB  
Article
An All-Solid-State PFN Generator Based on SPT and Fast Recovery Diode
by Longyu Zhuang, Jie Zhuang and Junfeng Rao
Electronics 2025, 14(21), 4274; https://doi.org/10.3390/electronics14214274 - 31 Oct 2025
Cited by 1 | Viewed by 743
Abstract
This study presents a pulse generator employing a saturable pulse transformer (SPT) in conjunction with a fast recovery diode, integrated within an all-solid-state pulse-forming network (PFN). The saturation inductance of the SPT serves as a component of the initial LC section of the [...] Read more.
This study presents a pulse generator employing a saturable pulse transformer (SPT) in conjunction with a fast recovery diode, integrated within an all-solid-state pulse-forming network (PFN). The saturation inductance of the SPT serves as a component of the initial LC section of the PFN, thereby contributing to the preservation of output waveform integrity. The secondary energy storage capacitor is charged through the primary circuit and the SPT, subsequently discharging into the load under the regulation of the SPT. An increase in the SPT’s transformation ratio corresponds to a rise in its saturated inductance, which in turn prolongs the pulse rise time. To mitigate this effect, a fast recovery diode is incorporated to sharpen the pulse front. Specifically, upon saturation of the SPT, current reverses through the fast recovery diode, effectively short-circuiting the load. When the inductor current attains a predetermined threshold, the diode reverts to reverse cut-off and rapidly switches off, enabling the PFN to discharge swiftly into the load and generate a high-voltage pulse characterized by a rapid rising edge. Furthermore, augmenting the number of secondary windings on the SPT—each connected to a PFN module—and arranging multiple PFNs in series facilitates an increase in output voltage. Experimental evaluations demonstrated that a three-stage PFN pulse generator attained a peak voltage of −16.9 kV on an 80 Ω matched load, with pulse currents exceeding 200 A while maintaining a 19 ns front edge. These results indicate that the proposed approach is effective for producing high-voltage, narrow pulses with rapid rise times. Additionally, the pulse power generator is capable of delivering repetitive pulses of −16.9 kV at a frequency of 20 kHz in burst mode. Full article
(This article belongs to the Topic Power Electronics Converters, 2nd Edition)
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9 pages, 5251 KB  
Communication
High Energy Storage Performance in Bi0.46Sr0.06Na0.5TiO3/CaTiO3 Relaxor Ferroelectric Ceramics
by Yangyang Zhang, Haizhou Guo, Shuyao Zhai, Liqin Yue, Juqin Zhang, Suxia He, Ruiling Fu, Chiyu Yin and Ling Zhang
Materials 2025, 18(21), 4932; https://doi.org/10.3390/ma18214932 - 28 Oct 2025
Viewed by 494
Abstract
(Bi0.5Na0.5)TiO3-based lead-free ferroelectric ceramics are among the most extensively researched energy storage materials today. In this paper, (1 − x)Bi0.46Sr0.06Na0.5TiO3−xCaTiO3 ceramics were synthesized through a solid-phase sintering method [...] Read more.
(Bi0.5Na0.5)TiO3-based lead-free ferroelectric ceramics are among the most extensively researched energy storage materials today. In this paper, (1 − x)Bi0.46Sr0.06Na0.5TiO3−xCaTiO3 ceramics were synthesized through a solid-phase sintering method by synergistically adjusting CaTiO3 components after introducing Sr2+ at the A-site. The XRD patterns revealed that all samples formed a single perovskite solid solution, with the 111 and 200 peaks shifting to higher levels as the CaTiO3 increased, indicating a gradual decrease in cell volume. The SEM images exhibited dense crystals without any apparent porosity, which were formed by the different components of the ceramics. Through energy storage, dielectric, and charge–discharge performance tests, it was found that with a 10%mol CaTiO3 addition, the samples obtained a maximum breakdown field strength of 260 kV/cm and corresponding saturation polarization strength of 32.80 μC/cm2 and thereby exhibited a reversible energy storage density valued 3.52 J/cm3. In addition, the dielectric constant varied by less than 10% within the temperature range of 63.7 °C to 132.7 °C and presented good frequency (10–250 Hz) stability at 180 kV/cm. Moreover, the ceramics demonstrated a maximum current density reaching 349.58 A/cm2 and a maximum power density of 18.90 MW/cm3 for their charge–discharge performance, all of which makes them suitable for pulse system applications. Full article
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12 pages, 1311 KB  
Review
Modulation of Voltage-Gated Na+ Channel Currents by Small Molecules: Effects on Amplitude and Gating During High-Frequency Stimulation
by Cheng-Yuan Lin, Zi-Han Gao, Chi-Wai Cheung, Edmund Cheung So and Sheng-Nan Wu
Sci. Pharm. 2025, 93(3), 33; https://doi.org/10.3390/scipharm93030033 - 24 Jul 2025
Viewed by 2009
Abstract
Cumulative inhibition of voltage-gated Na+ channel current (INa) caused by high-frequency depolarization plays a critical role in regulating electrical activity in excitable cells. As discussed in this review paper, exposure to certain small-molecule modulators can perturb INa during [...] Read more.
Cumulative inhibition of voltage-gated Na+ channel current (INa) caused by high-frequency depolarization plays a critical role in regulating electrical activity in excitable cells. As discussed in this review paper, exposure to certain small-molecule modulators can perturb INa during high-frequency stimulation, influencing the extent of cumulative inhibition and electrical excitability in excitable cells. Carbamazepine differentially suppressed transient or peak (INa(T)) and late (INa(L)) components of INa. Moreover, the cumulative inhibition of INa(T) during pulse-train stimulation at 40 Hz was enhanced by lacosamide. GV-58 was noted to exert stimulatory effect on INa(T) and INa(L). This stimulated INa was not countered by ω-conotoxin MVIID but was effectively reversed by ranolazine. GV-58′s exposure can slow down INa inactivation elicited during pulse-train stimulation. Lacosamide directly inhibited INa magnitude as well as promoted this cumulative inhibition of INa during pulse-train stimuli. Mirogabalin depressed INa magnitude as well as modulated frequency dependence of the current. Phenobarbital can directly modulate both the magnitude and frequency dependence of ionic currents, including INa. Previous investigations have shown that exposure to small-molecule modulators can perturb INa under conditions of high-frequency stimulation. This ionic mechanism plays a crucial role in modulating membrane excitability, hereby supporting the validity of these findings. Full article
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20 pages, 2217 KB  
Article
Cannabinoid Modulation of Excitability and Short-Term Neuronal Dynamics in the Dorsal and Ventral Hippocampus
by Giota Tsotsokou, Ioanna-Maria Sotiropoulou, Klearchos Stampolitis, George D. Oikonomou, Aikaterini-Paraskevi Avdi and Costas Papatheodoropoulos
Biology 2025, 14(6), 642; https://doi.org/10.3390/biology14060642 - 31 May 2025
Cited by 2 | Viewed by 3388
Abstract
Endocannabinoids, acting primarily through CB1 receptors, are critical modulators of neuronal activity, influencing cognitive functions and emotional processing. CB1 receptors are highly expressed in the hippocampus, primarily on GABAergic interneurons, modulating the excitation/inhibition balance. Previous evidence suggests the functional heterogeneity of CB1 receptors [...] Read more.
Endocannabinoids, acting primarily through CB1 receptors, are critical modulators of neuronal activity, influencing cognitive functions and emotional processing. CB1 receptors are highly expressed in the hippocampus, primarily on GABAergic interneurons, modulating the excitation/inhibition balance. Previous evidence suggests the functional heterogeneity of CB1 receptors along the dorsoventral axis of the hippocampus. However, it is not known whether CB1 receptors differentially modulate basic aspects of the local neuronal network along the hippocampus. This study investigated how CB1 receptor activation modulates excitability, paired-pulse inhibition (PPI), and short-term neuronal dynamics (STND) in the dorsal and ventral CA1 hippocampus under physiologically relevant conditions. Using extracellular recordings from hippocampal slices of male Wistar rats, we compared the effects of two CB1 receptor agonists, ACEA and WIN55,212-2, on network activity in the dorsal and ventral hippocampus. We found that both agonists significantly increased excitability and reduced PPI in the dorsal, but not the ventral, hippocampus. Similarly, CB1 receptor activation modulated STND more prominently in the dorsal hippocampus, reducing facilitation at low frequencies and reversing depression at high frequencies, whereas effects on the ventral region were minimal. These dorsoventral differences in the actions of cannabinoid receptor agonists occurred despite similar CB1 receptor expression levels in both regions, suggesting that functional differences arise from downstream mechanisms rather than receptor density. Pre-application of the GIRK channel blocker Tertiapin-Q occluded the effects of WIN55,212-2 on STND, indicating a significant role of GIRK channel-mediated signaling in CB1 receptor actions. These findings demonstrate that CB1 receptors modulate hippocampal circuitry in a region-specific manner, with the dorsal hippocampus being more sensitive to cannabinoid signaling, likely through differential engagement of intracellular signaling pathways such as GIRK channel activation. These results provide novel insights into how endocannabinoid signaling differentially regulates neuronal dynamics along the dorsoventral axis of the hippocampus. They also have important implications for understanding the role of cannabinoids in hippocampus-dependent behaviors. Full article
(This article belongs to the Section Neuroscience)
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21 pages, 8262 KB  
Article
The Multi-Resolution Migration Imaging Method for Grounded Electrical Source Transient Electromagnetic Virtual Wavefield
by Kailiang Lu, Xiu Li, Jianhua Yue, Ya’nan Fan, Qinrun Yang and Xiaozhen Teng
Appl. Sci. 2025, 15(3), 1107; https://doi.org/10.3390/app15031107 - 23 Jan 2025
Cited by 1 | Viewed by 1297
Abstract
The traditional source uses a square wave with a fixed fundamental frequency to excite transient electromagnetic (TEM) fields, with harmonic energy primarily concentrated in the low-frequency range, limiting the detection resolution of the TEM. The differential pulse, composed of two square waves with [...] Read more.
The traditional source uses a square wave with a fixed fundamental frequency to excite transient electromagnetic (TEM) fields, with harmonic energy primarily concentrated in the low-frequency range, limiting the detection resolution of the TEM. The differential pulse, composed of two square waves with identical pulse widths but opposite polarities, concentrates harmonic energy more effectively. By adjusting the pulse width of the differential pulse, the concentration frequency band of harmonic energy can be changed, enabling multi-resolution detection of geological structures at different depths. In this study, TEM fields are excited using differential pulses of varying pulse widths during power supply. A preconditioned precise integration time-sweeping wavefield reverse transformation method is applied to interpret the virtual wavefield from the diffusion field, effectively improving the numerical accuracy and noise resistance of the virtual wavefield. Then, the finite-difference migration imaging method is used to obtain imaging profiles for differential pulses of different pulse widths, and stacking techniques are applied to acquire high-resolution characteristics of electrical interfaces at various depths. Finally, the feasibility of the method is verified through a complex geological model. By comparing the relative anomalies of square waves and differential pulses with different pulse widths, the results show that the electromagnetic anomalies for differential pulses are increased by 53.7%. Therefore, using differential pulses as the excitation source leads to higher-resolution electromagnetic responses, which in turn result in high-resolution imaging. Full article
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15 pages, 6575 KB  
Article
Tunable Characteristics of Optical Frequency Combs from InGaAs/GaAs Two-Section Mode-Locked Lasers
by Dengqun Weng, Yanbo Liang, Zhongliang Qiao, Xiang Li, Jia Xu Brian Sia, Zaijin Li, Lin Li, Hao Chen, Zhibin Zhao, Yi Qu, Guojun Liu, Chongyang Liu and Hong Wang
Sensors 2024, 24(24), 7905; https://doi.org/10.3390/s24247905 - 11 Dec 2024
Viewed by 1657
Abstract
We observed tunable characteristics of optical frequency combs (OFCs) generated from InGaAs/GaAs double quantum wells (DQWs) asymmetric waveguide two-section mode-locked lasers (TS-MLLs). This involves an asymmetric waveguide mode-locked semiconductor laser (AWML-SL) operating at a center wavelength of net modal gain of approximately 1.06 [...] Read more.
We observed tunable characteristics of optical frequency combs (OFCs) generated from InGaAs/GaAs double quantum wells (DQWs) asymmetric waveguide two-section mode-locked lasers (TS-MLLs). This involves an asymmetric waveguide mode-locked semiconductor laser (AWML-SL) operating at a center wavelength of net modal gain of approximately 1.06 µm, which indicates a stable pulse shape, with the power-current(P-I) characteristic curve revealing a small difference between forward and reverse drive currents in the gain region. Under different operating conditions, the laser exhibits the characteristics of OFCs. And the pulse interval in the timing and the peak interval in the frequency domain show a periodic alternating change trend with the increase in the gain current. This tunable characteristic is reported for the first time. The study demonstrates the feasibility of generating tunable optical combs using a monolithic integrated two-section mode-locked semiconductor laser (MI-TS-MLL). This has important reference value for the application of OFCs generated from MI-TS-MLLs or integrated optical chips. Full article
(This article belongs to the Section Optical Sensors)
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14 pages, 11563 KB  
Article
Analysis of Circuits Supplying Thomson Coil Actuator Operating in Vacuum Contact Units of DC and AC Ultra-Fast Circuit Breakers
by Michal Rodak and Piotr Borkowski
Energies 2024, 17(22), 5809; https://doi.org/10.3390/en17225809 - 20 Nov 2024
Viewed by 1519
Abstract
The use of vacuum-hybrid DC circuit breaking methods allows the short-circuit current to be switched off in a shorter time, resulting in a reduction in the arc burning time. This requires the use of a drive, such as the Thomson Coil Actuator TCA, [...] Read more.
The use of vacuum-hybrid DC circuit breaking methods allows the short-circuit current to be switched off in a shorter time, resulting in a reduction in the arc burning time. This requires the use of a drive, such as the Thomson Coil Actuator TCA, capable of providing a short response time for opening the vacuum interrupter VI, regardless of its rated current. The IDD is powered by a pre-charged capacitor, which, together with the drive coil, forms an LC oscillating circuit that, when switched on by a thyristor, generates a current pulse of several kA with a frequency above 1 kHz. The paper investigates the effect of modifying the basic IDD power supply circuit by adding semiconductor diodes to shape the current pulse and improve its performance. The authors also focused on exploring the impact of the connection quality and their length and the associated loss in drive force while proving that a circuit with a reverse diode on the IDD coil is most beneficial and that the effect of the circuit on the front of the current pulse can significantly slow down the drive. Full article
(This article belongs to the Section F: Electrical Engineering)
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28 pages, 19988 KB  
Article
Performance Improvement of Wireless Power Transfer System for Sustainable EV Charging Using Dead-Time Integrated Pulse Density Modulation Approach
by Franklin John, Pongiannan Rakkiya Goundar Komarasamy, Narayanamoorthi Rajamanickam, Lukas Vavra, Jan Petrov and Vladimir Kral
Sustainability 2024, 16(16), 7045; https://doi.org/10.3390/su16167045 - 16 Aug 2024
Cited by 8 | Viewed by 3157
Abstract
The recent developments in electric vehicle (EV) necessities the requirement of a human intervention free charging system for safe and reliable operation. Wireless power transfer (WPT) technology shows promising options to automate the charging process with user convenience. However, the operation of the [...] Read more.
The recent developments in electric vehicle (EV) necessities the requirement of a human intervention free charging system for safe and reliable operation. Wireless power transfer (WPT) technology shows promising options to automate the charging process with user convenience. However, the operation of the WPT system is designed to operate at a high-frequency (HF) range, which requires proper control and modulation technique to improve the performance of power electronic modules. This paper proposes a dead-time (DT) integrated Pulse Density Modulation (PDM) technique to provide better control with minimal voltage and current ripples at the switches. The proposed technique is investigated using a LCC-LCL compensated WPT system, which predominantly affects the high-frequency voltage and current ripples. The performance analysis is studied at different density conditions to explore the impact of the integrated PDM approach. Moreover, the PDM technique gives better control over the power transfer at different levels of load requirement. The simulation and experimental analysis was performed for a 3.7 kW WPT prototype test system under different modes of operation of the high-frequency power converters. Both the simulated and experimental results demonstrate that the proposed PDM technique effectively enhances the efficiency of the HF inverter while significantly reducing output current ripples, power dissipation and improving the overall WPT system efficiency to 92%, and leading to a reduction in the power loss in the range of 10% to 20%. This leads to improved overall system control and performance. Full article
(This article belongs to the Topic Advanced Electric Vehicle Technology, 2nd Volume)
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19 pages, 11552 KB  
Article
The Temperature Dependence of the Parameters of LED Light Source Control Devices Powered by Pulsed Voltage
by Iryna Beliakova, Liubov Kostyk, Pavlo Maruschak, Volodymyr Medvid, Vadim Piscio, Oleksandr Shovkun and Roman Mykhailyshyn
Appl. Sci. 2024, 14(13), 5678; https://doi.org/10.3390/app14135678 - 28 Jun 2024
Cited by 3 | Viewed by 3781
Abstract
Ambient temperature has a significant effect on the electrical and luminous parameters of light-emitting diodes (LEDs), which include forward and reverse current, forward voltage, and luminous flux. This paper gives insight into the influence of ambient temperature on the electrical and luminous parameters [...] Read more.
Ambient temperature has a significant effect on the electrical and luminous parameters of light-emitting diodes (LEDs), which include forward and reverse current, forward voltage, and luminous flux. This paper gives insight into the influence of ambient temperature on the electrical and luminous parameters of LEDs powered by a rectangular pulsed voltage source versus those powered by a constant voltage source. The characteristics of LEDs in LED lighting devices were studied to determine their optimal operating conditions. To this end, rectangular pulse voltages with different pulse filling factors D were considered against the DC voltage source. Characteristics were obtained for the current stabilization mode and for the LED voltage stabilization mode. In both modes, the temperature dependence of the luminous flux, current, voltage, power consumption, and luminous efficiency of the LEDs was studied in the 20 °C to 60 °C range. The optimal LED operating conditions were determined, of which their luminous flux and luminous efficiency are least dependent on ambient temperature. When powered by a rectangular pulse voltage, the LED device drivers’ optimal pulse filling factor and operating frequency were determined. Full article
(This article belongs to the Section Electrical, Electronics and Communications Engineering)
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