Search Results (486)

The growing demand for electric vehicles, renewable energy systems, and portable electronics has led to the widespread adoption of power conversion systems. Although advanced structures like the superjunction MOSFET have prolonged the viability of silicon in power applications, maintaining its dominance through cost efficiency, Si-based technology is ultimately constrained by its intrinsic limitations in critical electric fields. To address these constraints, research into wide bandgap semiconductors aims to minimize system footprint while maximizing efficiency. This study reviews the semiconductor landscape, demonstrating why Gallium Nitride (GaN) has emerged as the most promising technology for next-generation power applications. With a critical electric field of $3.75\mathrm{MV}/\mathrm{cm}$ ($12.5\times$ higher than Si), GaN facilitates power devices with lower conduction loss and higher frequency capability when compared to their Si counterpart. Furthermore, this paper surveys the GaN ecosystem, ranging from device modeling and packaging to monolithic ICs and switching converter implementations based on discrete transistors. While existing literature primarily focuses on discrete devices, this work addresses the critical gap regarding GaN monolithic integration. It synthesizes key challenges and achievements in the design of GaN integrated circuits, providing a comprehensive review that spans semiconductor technology, monolithic circuit architectures, and system-level applications. Reported data demonstrate monolithic stages reaching $30\mathrm{m}\Omega$ and $25\mathrm{MHz}$, exceeding Si performance limits. Additionally, the study reports on high-density hybrid implementations, such as a space-grade POL converter achieving $123.3\mathrm{kW}/\mathrm{L}$ with $90.9\%$ efficiency. Full article

This paper proposes a dynamic voltage restorer (DVR) based on a new three-phase multilevel inverter (MLI). An integral component of DVRs is the power electronic converter. At medium-to-high voltage levels, MLIs are the ideal converters for DVR applications because lower voltage-rated switches are used to generate high voltages, thus minimizing power losses. The proposed three-phase MLI generates 15 levels of load voltage per phase, using a reduced component count: eight lower-rated semiconductor power switches, four primary DC voltage sources, two auxiliary DC sources, and eight driver circuits per phase. Additionally, each phase features a low-frequency transformer with voltage-boosting and galvanic isolation capabilities. The switching sequence of the proposed MLI is simpler to execute using fundamental frequency control; this methodology provides reduced switching stress and reduced switching losses as merits. Structurally, the proposed MLI is less complex and thus scalable. The proposed DVR, based on three-phase MLI, efficiently offsets power quality problems such as voltage swell, voltage sags, and harmonics for balanced and unbalanced loads. The operational performance of the proposed DVR-MLI is verified by a simulation, using PSCAD software and an experimental prototype. Full article

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN) are key enablers of power-electronics converters for aerospace platforms, where high efficiency, weight reduction, and thermal robustness are critical requirements. This paper presents the main challenges associated with the use of these technologies, including protection requirements, electromagnetic compatibility, and thermal management, as well as the material advantages that enable higher switching frequencies and lower losses compared to conventional Si technologies. A comparative analysis of semiconductor technologies and suitable power-conversion topologies for the aerospace context is provided. Representative laboratory-scale experimental validation is presented, including the development of a DC–DC boost converter and a DC–AC full-bridge inverter, which are linked through the common DC-link and are used for interfacing batteries and an electrical motor, both based on GaN and SiC diodes. The results demonstrated the correct operation, with stable high-frequency performance under controlled laboratory conditions, supporting aerospace-oriented development, although evaluated in a laboratory environment, confirming the potential of WBG technologies for future power-conversion architectures. Full article

Bond wire degradation represents the predominant failure mechanism in IGBT modules, accounting for approximately 70% of power converter failures and posing significant reliability challenges in modern power electronic systems. Existing monitoring techniques face inherent trade-offs between measurement accuracy, implementation complexity, and electromagnetic compatibility. This paper proposes a physics-constrained ensemble learning framework for non-intrusive bond wire health assessment via V_ce-on prediction. The methodological innovation lies in the synergistic integration of multidimensional feature engineering, adaptive ensemble fusion, and domain-informed regularization. A comprehensive 16-dimensional feature vector is constructed from multi-physical measurements, including electrical, thermal, and aging parameters, with novel interaction terms explicitly modeling electro-thermal stress coupling. A dynamic weighting mechanism then adaptively fuses three specialized gradient boosting models (CatBoost for high-current, LightGBM for thermal-stress, and XGBoost for late-life conditions) based on context-aware performance assessment. Finally, the meta-learner incorporates a physics-based regularization term that enforces fundamental semiconductor properties, ensuring thermodynamic consistency. Experimental validation demonstrates that the proposed framework achieves a mean absolute error of 0.0066 V and R² of 0.9998 in predicting V_ce-on, representing a 48.4% improvement over individual base models while maintaining 99.1% physical constraint compliance. These results establish a paradigm-shifting approach that harmonizes data-driven learning with physical principles, enabling accurate, robust, and practical health monitoring for next-generation power electronic systems. Full article

This paper proposes an analog retuning strategy that strengthens the functional longevity of photovoltaic (PV) systems operating within circular-economy environments. Although PV modules can be relocated from large generation sites to low-demand rural or remote settings, their electrical behavior offers no adjustable quantities capable of extending service duration. In many cases, even after formal disposal or decommissioning, these solar panels still retain a considerable portion of their energy-generation capability and can operate for many additional years before their output becomes negligible, making second-life deployment both technically viable and economically attractive. In contrast, the associated power-electronic converters contain modifiable gate-driver parameters that can be reconfigured to moderate transient phenomena and lessen device stress. The method introduced here adjusts the external gate resistance in conjunction with coordinated switching-frequency adaptation, reducing overshoot, ringing, and steep $dv/dt$ slopes while preserving the original switching-loss budget. A unified analytical framework connects stress mitigation, ripple evolution, and projected lifetime enhancement, demonstrating that deliberate analog tuning can substantially increase the endurance of aged semiconductor hardware without compromising suitability for second-life PV applications. Analytical results are supported by experimental validation, including hardware measurements of switching waveforms and energy dissipation under multiple gate-resistance configurations. Full article

This work reports the design and realization of a silicon-based micro photovoltaic generator (MPG) fabricated using a standard 0.18 μm complementary metal oxide semiconductor (CMOS) technology. The device harvests optical energy and converts it into electrical power through the photovoltaic effect, leveraging a network of engineered p–n junctions formed within the semiconductor. A grid-structured architecture is adopted, in which patterned p-type regions are embedded inside an n-well platform. This configuration expands the effective junction area, increases carrier-collection paths, and strengthens the internal electric field, thereby enhancing photocurrent generation. To further improve optical coupling, a specialized post-CMOS treatment is introduced. A wet etching is used to selectively remove the silicon dioxide layer that normally covers the junction regions in CMOS processes. Eliminating this dielectric layer enables direct photon penetration into the depletion region minimizes reflection-related losses, resulting in a significant improvement in device performance. Under an illumination intensity of 1000 W/m², the fabricated microgenerator delivers an open-circuit voltage of 0.49 V, a short-circuit current of 239 µA, and a maximum output power of 90 µW. The device exhibits an overall energy conversion efficiency of 12.9%, confirming the effectiveness of the grid-like junction design and the post-processing oxide removal. Full article

Electric propulsion (EP) has become a pivotal technology in modern space exploration, enabling prolonged mission durations, increased payload capacity, and precise deep-space navigation through its superior thrust efficiency and low propellant consumption. However, the performance of EP systems is fundamentally limited by the power processing unit (PPU), with the DC-DC power converter serving as the core of the PPU. Existing research on DC-DC converters often focuses on generic topologies, failing to address the divergent power demands of distinct EP types and the harsh space-specific constraints. This review aims to fill this gap by systematically analyzing DC-DC power converters tailored for EP systems. First, the core requirements of converters across major EP categories are classified. Then, converter topologies are compared by evaluating the suitability for EP operational and space constraints. Moreover, high step-up conversion techniques are explored that bridge the gap between low-voltage spacecraft buses and thruster power needs. Furthermore, this review highlights emerging technologies driving EP converter advancement, such as wide-bandgap semiconductors for improved power density and efficiency, planar magnetics for miniaturization, and direct-drive architecture for simplified Hall-effect thruster integration. It also identifies unresolved challenges, including balancing power density with thermal robustness, mitigating radiation-induced degradation, and suppressing electromagnetic interference (EMI). Finally, it outlines future research directions, such as optimizing WBG-compatible converter topologies, developing advanced thermal management solutions, and standardizing EP-specific design guidelines. This work provides a practical reference for PPU engineers, linking converter design to EP unique demands and space constraints while guiding innovations to advance EP technology for next-generation space missions, from low-Earth orbit satellites to interplanetary exploration. Full article

Power semiconductor devices are fundamental components in modern electronic power conversion. In applications demanding high power density and efficiency, the choice between silicon (Si) IGBTs and Silicon Carbide (SiC) MOSFETs is critical. SiC MOSFETs, owing to their high critical electric field, superior thermal conductivity, wide band gap, and low power loss, realize significant performance improvements and compact design. This work presents a comprehensive, simulation-driven comparative investigation under identical setups, evaluating both technologies across various parameters. The effects of temperature variations on gate-source threshold voltage drift, current slew rate, device stress, and energy dissipation during switching transitions are evaluated. Furthermore, the characteristic switching behavior when the DC-bus voltage, gate resistance, and load current are varied is investigated. This study addresses a current scarcity of systematic investigation by presenting a comprehensive comparative evaluation of switching losses and efficiency across varied operating conditions, providing validated conclusions for the design of advanced WBG converters. The results demonstrate that SiC exhibits lower losses and faster switching speeds than Si IGBTs, with minimal temperature-dependent loss variations, unlike Si devices, whose losses rise significantly with temperature. Si shows distinct tail currents during turn-off, absent in SiC devices. A conclusive comparative evaluation of switching energy losses under varied operating conditions demonstrates that SiC devices can effectively retrofit Si counterparts for fast, low-loss, high-efficiency applications. Full article

This study investigates the use of Si and CdTe-based Timepix3 detectors for photovoltaic energy conversion using solar X-rays and other high-energy electromagnetic radiation in space. As space missions increasingly rely on miniaturized platforms like CubeSats, power generation in compact and radiation-prone environments remains a critical challenge. Conventional solar panels are limited by size and spectral sensitivity, prompting the need for alternative energy harvesting solutions—particularly in the high-energy X-ray domain. A novel CubeSat-compatible payload design incorporates a UV-visible filter to isolate incoming X-rays, which are then absorbed by semiconductor detectors to generate electric current through ionization. Laboratory calibration was performed using Fe-55, Ba-133, and Am-241 sources to compare spectral response and clustering behaviour. CdTe consistently outperformed Si in detection efficiency, spectral resolution, and cluster density due to its higher atomic number and material density. Equalization techniques further improved pixel threshold uniformity, enhancing spectroscopic reliability. In addition to experimental validation, simulations were conducted to quantify the expected energy conversion performance under orbital conditions. Under quiet-Sun conditions at 500 km LEO, CdTe absorbed up to 1.59 µW/cm² compared to 0.69 µW/cm² for Si, with spectral power density peaking between 10 and 20 keV. The photon absorption efficiency curves confirmed CdTe’s superior stopping power across the 1–100 keV range. Under solar flare conditions, absorbed power increased dramatically, up to 159 µW/cm² for X-class and 15.9 µW/cm² for C-class flares with CdTe sensors. A time-based energy model showed that a 10 min X-class flare could yield nearly 1 mJ/cm² of harvested energy. These results validate the concept of a compact photovoltaic payload capable of converting high-energy solar radiation into electrical power, with dual-use potential for both energy harvesting and radiation monitoring aboard small satellite platforms. Full article

The exponential growth of artificial intelligence (AI), electrified transport, and renewable generation is accelerating a structural shift in how societies produce, deliver, and consume electricity. We argue that the next frontier is not incremental efficiency but Energy Intelligence (EI): the embedding of predictive analytics, adaptive control, and material-aware design directly into power-conversion hardware. In this view, power electronics functions as the cognitive layer that links digital intelligence to the physical flow of energy. Wide-bandgap (WBG) semiconductors—gallium nitride (GaN) and silicon carbide (SiC)—provide the material foundation for higher switching frequencies, superior power density, and real-time controllability, enabling compact and efficient converters for data-centers, EV charging, and grid-interactive resources. We formalize an EI reference architecture (predictive, adaptive, material-efficient, data-driven), review the convergence of AI methods with converter design and operation, and outline a GaN/SiC-enabled data-center power path as an illustrative case. Finally, we examine sustainability and sovereignty, highlighting exposure to critical materials (Ga, Si, In, rare earths) and proposing a roadmap that integrates technology, policy, and education. By reframing power electronics as an intelligent, learning infrastructure, this work sets an agenda for systems that are not only efficient but also self-optimizing, explainable, and resilient. Full article

Wide bandgap (WBG) power semiconductors such as silicon carbide (SiC) can significantly improve the performance of multilevel converters. However, there are three challenges for large-scale application: high cost, limited power ratings, and reliability issues. In this paper, we propose a Si and SiC hybrid arms active neutral-point-clamped (ANPC) converter, using smaller current rating SiC devices compared to other Si devices in this topology. By employing the hybrid-frequency modulation scheme, the Si devices switch at fundamental frequency (FF) or low frequency (LF), while the SiC devices switch at high frequency (HF). The equivalent circuit of the proposed converter is derived to analyze the principle of LF current ripple compensation. The closed-loop cooperative current control strategy is proposed to realize unequal current sharing in two arms and complete LF current ripple compensation. The Si arm processes major power, while the SiC arm compensates the LF current ripple generated by the Si arm and processes minor power. The proposed topology and control strategy are validated by simulation and experimental results. Compared with the existing typical topologies, the comprehensive optimization of power quality, efficiency, and cost is realized. Full article

The choice of a suitable isolated and bidirectional DC/DC converter (IBDC) topology is an important step in the design of a bidirectional electric vehicle (EV) charging system. In this context, six 10 kW rated silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET)-based dual-active bridge (DAB) converter topologies, supplied by a +750/0/−750 V bipolar DC link, are analyzed and compared in this article. The evaluation criteria include the required volt-ampere semiconductor ratings, loss distribution, efficiency, and thermal considerations of the considered converter configurations. The IBDC topologies are compared based on the observations and results obtained from theoretical analysis, electro-thermal simulations, and experiments, considering the same voltage and power conditions. The advantages and disadvantages of the topologies, in terms of the considered evaluation criteria, are discussed. It is shown that the series-resonant (SR) input-series output-parallel (ISOP) full-bridge (FB) DAB converter configuration is the most suitable design choice for the considered EV charging application based on the chosen operating conditions and evaluation criteria. Full article

Agriculture 4.0 integrates smart technologies to optimize agricultural management. This work proposes the development of a low-cost remote sensing module for small producers in the north of Paraná, Brazil, using the STM32F411CEU6 (STMicroelectronics, Geneva, Switzerland) microcontroller and the nRF24L01 (Nordic Semiconductor, Trondheim, Norway) + module for mesh communication. The system measures temperature, humidity, and pressure using DS18B20, BME280, and capacitive soil moisture sensors via Inter-Integrated Circuit (I²C), Serial Peripheral Interface (SPI), and Analog-to-Digital Converter (ADC). Powered by a solar cell and Lithium Polymer (Li-Po) battery, along with a charge controller, the module acts as a transceiver, sending data to a gateway where it can be stored and analyzed, democratizing access to technology and supporting decision-making in crop management. Full article

The electrification of mobility sectors, including automotive, aerospace, and robotics, has accelerated the need for compact and high-efficiency power converters in electric motor drives. Wide-bandgap (WBG) semiconductor–based inverters offer significant advantages over conventional silicon IGBT inverters by enabling higher switching speeds, elevated switching frequencies, and improved power conversion efficiency. However, the adoption of high-frequency switching introduces several challenges, particularly increased motor neutral point voltage stress, originating from inverter common-mode (CM) voltage. The increased neutral point voltage directly elevates motor bearing voltage, the primary driver of motor bearing currents, among which electrostatic discharge machining (EDM) bearing current is the primary cause of bearing degradation in low-power motors. This paper experimentally investigates the root causes of the EDM phenomenon and identifies the key factors influencing its occurrence and severity in WBG-based drive systems. The conventional CM choke designs effectively attenuate motor CM currents and EMI; however, they are ineffective in suppressing EDM bearing currents. In this paper, an alternative CM choke design methodology is proposed to eliminate EDM bearing currents by optimizing the choke inductance to shift the motor CM antiresonance frequency below the inverter switching frequency, thereby ensuring that nearly all source CM voltage is absorbed by the choke. This design approach effectively minimizes the voltage appearing at the motor neutral point and across the bearings, thereby suppressing EDM bearing current spikes without affecting motor DM performance. The choke parameters are mathematically derived for optimal performance and validated through experimental testing on a 2.2 kW three-phase star-connected induction motor powered by a wide-bandgap two-level voltage-source inverter. Full article

In micro gas turbines, electrical power from the high-speed generator is delivered to the grid through a converter that influences overall efficiency and energy quality. This subsystem is often overlooked in efforts to improve turbine performance, which have traditionally focused on combustors and turbomachinery. This study investigates how replacing conventional silicon switching devices in the converter with silicon carbide technology can directly reduce greenhouse gas emissions from micro gas turbines. Although silicon carbide is widely used in electric vehicles and distributed energy systems, its emission reduction impact has not been assessed in micro gas turbines. A MATLAB-based model of a 100 kW Ansaldo Energia micro gas turbine was used to compare the performance of silicon and silicon carbide converters across the 20–100 kW operating range. Silicon carbide reduced total converter losses from 4.316 kW to 3.426 kW at full load, a decrease of 0.889 kW. This improvement lowered carbon dioxide emissions by 5.7 g/kWh and increased net electrical efficiency from 30.03% to 30.29%. Each turbine can therefore avoid about 1.53 tonnes of carbon dioxide annually, or 11.61 tonnes over a 50,000 h service life, without altering turbine design, combustor geometry, or fuel composition. This work establishes the first quantitative link between wide-bandgap semiconductor performance and direct greenhouse gas mitigation in micro gas turbines, demonstrating that upgrading converter technology from silicon to silicon carbide offers a deployable pathway to reduce emissions from micro gas turbines and, by extension, lower the carbon intensity of distributed generation systems. Full article