Search Results (69)

Dark current represents a fundamental limiting factor in photodiode performance, establishing the noise floor and constraining detectivity in low-light applications. This comprehensive literature review examines publications covering the physical mechanisms underlying dark current generation and diverse techniques employed for its reduction. Covered mechanisms include diffusion current, Shockley–Read–Hall (SRH) generation–recombination, trap-assisted tunneling, band-to-band tunneling, and surface leakage, each examined with respect to its physical origin and characteristic signatures. Reduction strategies are categorized into thermal management approaches, surface passivation techniques including atomic-layer-deposited aluminum oxide (ALD Al₂O₃), guard ring architectures (attached, floating, and combined configurations), gettering and defect engineering methods, doping profile optimization, bias voltage management, and advanced device architectures such as pinned photodiodes and black silicon structures. A classification table organizes all the reviewed literature by material system, reduction technique, and key findings. Special emphasis is placed on silicon, germanium, III–V compounds, and emerging material photodiodes relevant to near-infrared detection, CMOS imaging, single-photon avalanche diodes (SPADs), and Time-of-Flight (ToF) applications. Full article

We develop Cs_xFA_1−xPbI₃ perovskite photodetectors with varying Cs content in the x = 0.05–0.25 range to identify the most stable cubic-lattice perovskite composition for visible-light photodetection. The perovskite layers were deposited by the spin-coating technique on a nickel oxide p-type contact and then were covered with C₆₀/Ag electron contact to obtain a vertical pin diode structure. X-ray diffraction (XRD) and scanning electron microscopy (SEM) measurements show that x = 0.1–0.2 provides the most stable lattice and pinhole-free perovskite layers. The photocurrents are linear in an extremely wide 1 nW–10 mW excitation power range, providing photoresponsivity of 0.28 A/W at 532 nm (green light), similar to that of Si photodiodes. The testing of the photodetectors using picosecond pulses provided their rise times and fall times. The x = 0.2 composition provided the shortest rise time values of 27.5 ns, leading to a detector modulation bandwidth of 12.7 MHz. This indicates that this perovskite composition is suitable for replacing silicon photodetectors in cost-efficient light detection systems for imaging and light communication applications such as Li-Fi. Full article

Front-illuminated GaN-based p-i-n photodiodes (PDs) incorporating indium-surfactant -assisted (ISA) Mg-δ-doped p-GaN were fabricated and systematically characterized. Hall-effect measurements at room temperature revealed a hole concentration of~1.5 × 10¹⁸ cm⁻³ in the ISA Mg-δ-doped p-GaN, significantly higher than that of uniformly Mg-doped p-GaN (~3.7 × 10¹⁷ cm⁻³). Devices employing ISA Mg-δ-doped p-GaN exhibited reduced leakage current, enhanced responsivity, faster response speed, improved reliability, and lower noise current compared to control PDs. These comprehensive performance enhancements, attributed to the improved crystalline quality and the optimized electric field distribution, suggest significant potential in practical UV applications. Full article

This paper investigates a novel optical method that uses a high-responsivity a-Si:H photodiode for label-free detection of luminescence from HeLa cervical cancer cells excited by a blue LED. We examine the energy distribution of the energy-gap density of states (DOS) from the photodiode’s long-time transient current, which shows exponential decay kinetics in the HeLa cell reaction. We analysed the transient response of a-Si:H p-i-n photodiode upon the illumination of the analyte with a pulsed blue LED light to better understand the HeLa cells activity and the fundamental defect kinetics processes in the a-Si:H material. Results suggest that the characteristic very low-level, time-varying light response of HeLa cells is due to chemiluminescence within cells, resulting from the reaction between nitric oxide (NO) and hydrogen peroxide (H₂O₂). Given the low signal intensity and noise, we applied a Savitzky–Golay (SG) filter to post-process the data. By reducing noise without attenuating chemiluminescent peaks, the Savitzky–Golay filter enabled accurate, reproducible quantification of the photocurrent response, reflecting the kinetics of cellular reactions. Further studies and more precise measurement instruments are needed for this real-time, label-free, non-destructive method, which applies SG-filtered signal processing to microfluidic optical biosensors. Full article

With the advent of electric vehicles, the demand for non-destructive inspection methods for battery evaluation has increased. Among various requirements, achieving high-frame-rate performance is particularly critical for rapid inspection in end-user systems. However, image delay, which increases with frame rate, has emerged as a significant challenge due to inherent limitations in sensor design. As a result, extensive research has been conducted to improve image lag performance. In this study, we conducted an in-depth analysis of the fundamental causes of image lag in image sensors. Based on these findings, we fabricated a novel sensor with a reset transistor separate from the readout transistor used for data transfer. This approach effectively increased the reset current of the photodiode, significantly reducing image lag. The transistor material used in this study was InGaZnO, which showed a significant improvement in image lag compared to conventional methods. By introducing a dedicated reset transistor, the allowable reset current of the PIN diode was increased by a factor of 100 compared to the ROIC-limited condition, resulting in a significant reduction in image lag from 3.8% (STS) to 0.9% (DTS) under high-frame-rate operation. This research provides a theoretical basis for proposing various new X-ray digital image sensor structures. Full article

This study presents the development and validation of a high-speed optical data acquisition system for detecting and characterizing hydrodynamic cavitation downstream of a triangular nozzle. The system integrates a PIN photodiode, a transimpedance amplifier, and a high-sampling-rate microcontroller. Its performance was first evaluated using controlled sinusoidal signals, and statistical stability was assessed as a function of the number of acquired samples. Experiments were subsequently conducted in a converging–diverging conduit under biphasic flow conditions, where mean irradiance, standard deviation, and frequency spectra were analyzed downstream of the nozzle. The optical signal distributions revealed transitions in flow behavior associated with cavitation development, which were quantified through statistical metrics and spectral features. The Strouhal number was estimated from dominant frequencies extracted from the spectra, exhibiting a non-monotonic dependence on the Reynolds number, consistent with changes in flow structure and turbulence intensity. Spectral analysis further indicated frequency bands associated with energy transfer across turbulent scales and bubble dynamics. Overall, the results demonstrate that the proposed optical system constitutes a viable and non-intrusive methodology for detecting and characterizing cavitation intensity in a way that complements other optical and acoustic methods. Full article

Long-range, high-resolution distance measurement with high ambient-light tolerance has been achieved using a 720 × 488-resolution short-pulse indirect time-of-flight (SP-iToF) image sensor featuring six-tap, one-drain pixels fabricated by a front-side illumination (FSI) process. The sensor performs 30-phase demodulation through six-tap pixels in each subframe, combined with five range-shifted subframe (SF) readouts. The six-tap demodulation pixel, designed with a lateral drift-field pinned photodiode, demonstrates over 90% demodulation contrast for a 20 ns light-pulse width. High-speed column-parallel 12-bit cyclic ADCs enable all six-tap subframe signals to be read within 4.38 ms. This high-speed subframe readout, together with efficient exposure-time allocation across the five subframes, enables a depth-image frame rate of 10 fps. The multi-phase demodulation in SP-iToF measurements, operating with an extremely small duty ratio of 0.2%, effectively suppresses ambient-light charge accumulation and the associated shot noise in the pixel. As a result, distance measurements up to 100 m under 100 klux illumination are achieved, with depth noise maintained below 1%. Full article

Laser ranging technology holds a key position in the military, aerospace, and industrial fields due to its high precision and non-contact measurement characteristics. As a core component, the performance of the photon detector directly determines the ranging accuracy and range. This paper systematically reviews the technological development of photonic detectors for laser ranging, with a focus on analyzing the working principles and performance differences of traditional photodiodes [PN (P-N junction photodiode), PIN (P-intrinsic-N photodiode), and APD (avalanche photodiode)] (such as the high-frequency response characteristics of PIN and the internal gain mechanism of APD), as well as their applications in short- and medium-range scenarios. Additionally, this paper discusses the unique advantages of special structures such as transmitting junction-type and Schottky-type detectors in applications like ultraviolet light detection. This article focuses on photon counting technology, reviewing the technological evolution of photomultiplier tubes (PMTs), single-photon avalanche diodes (SPADs), and superconducting nanowire single-photon detectors (SNSPDs). PMT achieves single-photon detection based on the external photoelectric effect but is limited by volume and anti-interference capability. SPAD achieves sub-decimeter accuracy in 100 km lidars through Geiger mode avalanche doubling, but it faces challenges in dark counting and temperature control. SNSPD, relying on the characteristics of superconducting materials, achieves a detection efficiency of 95% and a dark count rate of less than 1 cps in the 1550 nm band. It has been successfully applied in cutting-edge fields such as 3000 km satellite ranging (with an accuracy of 8 mm) and has broken through the near-infrared bottleneck. This study compares the differences among various detectors in core indicators such as ranging error and spectral response, and looks forward to the future technical paths aimed at improving the resolution of photon numbers and expanding the full-spectrum detection capabilities. It points out that the new generation of detectors represented by SNSPD, through material and process innovations, is promoting laser ranging to leap towards longer distances, higher precision, and wider spectral bands. It has significant application potential in fields such as space debris monitoring. Full article

This investigation is centered on the analysis of frequency response characteristics of a p-i-n photodiode using InxGa_1−xAs/InP. The InGaAs/InP can be developed under three conditions: compression, tensile strain, and lattice matching. Initially, we performed calculations on strain, bandgap energy (E_g), and absorption coefficient. We then optimized the influence of indium concentration (x) on stability, critical thickness, bandgap energy, and absorption coefficient. The effects of temperature and deformation on E_g were also studied. Finally, we optimized the cutoff frequency (f_c), capacitive effects, and response frequency by considering the impact of x, active layer thickness (d), and surface area (S). For our future endeavors, we intend to explore additional parameters that may affect the p-i-n response. In future work, we can add transparent double layers in the i. InGaAs layer to reduce the transit time, leading to the development of an ultrafast photodiode. Full article

Laser space networks are an important development direction for inter-satellite communication. Detecting the angle of arrival (AOA) of multiple satellites in a wide field of view (FOV) is the key to realize inter-satellite laser communication networking. The traditional AOA detection method based on the lens system has a limited FOV. In this paper, we demonstrate a system that uses a spatially distributed sensor array to detect the AOA in a wide FOV. The basic concept is to detect AOA using the signal strength of each sensor at different spatial angles. An AOA detection model was developed, and the relationship of key structural parameters of the spatially distributed sensor array on the FOV and angular resolution was analyzed. Furthermore, a spatially distributed sensor array prototype consisting of 5 InGaAs PIN photodiodes distributed on a 3D-printed structure with an inclination angle of 30° was developed. In order to improve the angle calculation accuracy, a multi-sensor data fusion algorithm is proposed. The experimental results show that the prototype’s maximum FOV is 110°. The root mean square error (RMSE) for azimuth is 0.6° within a 60° FOV, whereas the RMSE for elevation is 0.67°. The RMSE increases to 1.1° for azimuth and 1.7° for elevation when the FOV expands to 110°. The designed spatially distributed sensor array has the advantages of a wide FOV and low size, weight, and power (SWaP), presenting great potential for multi-satellite laser communication applications. Full article

Photodetectors are indispensable in a multitude of applications, with the detection of surface defects serving as a cornerstone for their production and advancement. To meet the demands of real-time and accurate defect detection, this paper introduces an optimization algorithm based on the GLV-YOLO model tailored for photodetector defect detection in manufacturing settings. The algorithm achieves a reduction in the model complexity and parameter count by incorporating the GhostC3_MSF module. Additionally, it enhances feature extraction capabilities with the integration of the LSKNet_3 attention mechanism. Furthermore, it improves generalization performance through the utilization of the WIoU loss function, which minimizes geometric penalties. The experimental results showed that the proposed algorithm achieved 98.9% accuracy, with 2.1 million parameters and a computational cost of 7.0 GFLOPs. Compared to other methods, our approach outperforms them in both performance and efficiency, fulfilling the real-time and precise defect detection needs of photodetectors. Full article

Semiconductor radiation detectors usually use a specific signal conditioning circuit, ensuring the required detection system parameters. This paper details the noise properties of specific input stages in photoreceivers that detect various types of radiation. For this purpose, the popular silicon PIN photodiode (BPW34) and two different types of low-noise operational amplifiers (AD797A and ADA4625-1) were used. In the presented experiments, noise measurements were provided for voltage and transimpedance amplifiers operating in input stages, comparing their noise and bandwidths. This made it possible to obtain results for bipolar junction transistor (BJT)- and field-effect transistor (FET)-based input stages of circuity, cooperating directly with a photodiode. Analyzing the obtained characteristics and considering the photodiode operation mode, it is evident that the transimpedance amplifier and photoconductive mode should be considered a typical first-choice solution. In some cases, the performances, such as bandwidth and noise, may be similar to those of voltage. Nevertheless, the bias method used in TIA and feedback compensation can also affect the resulting output noise spectral characteristics due to the photodiode and other capacitances existing in the circuit. In the case of a high transimpedance, the FET-based op-amps ensure lower output noise than the BJT-based ones due to the significantly lower current noise. The simple radiation detector with two-channel differential TIA was also proposed and tested based on the results obtained. Full article

Silicon photodetectors are well developed, with the advantage of their low cost and easy fabrication. However, due to the semiconductor band gap limitation, their detection wavelength is limited in the visible and near-infrared ranges. To broaden the detection wavelength, we stacked a mercury telluride (HgTe) colloidal quantum dot (CQD) photodiode and a silicon PIN photodiode in series. This detector shows response spectra ranging from visible to short-wave infrared (430 nm to 2800 nm) at room temperature. At zero bias, the total photocurrents are 112.5 μA and 1.24 μA, with a tungsten lamp and a blackbody serving as light sources, respectively. The response speed can reach 1.65 μs, with the calculated detectivities of the visible wavelength D* = 1.01 × 10¹¹ Jones, and that of the short-wave infrared being D* = 2.66 × 10¹⁰ Jones at room temperature. At the same time, with a homemade trans-impedance amplifier (TIA) circuit, we demonstrate the device application for figuring out the amplified voltage of the VIS, SWIR, and the VIS-SWIR stacked layers. Full article

We present a novel photon-acid diffusion method to integrate polymer microlenses (MLs) on a four-channel, high-speed photo-receiver consisting of normal-incidence germanium (Ge) p-i-n photodiodes (PDs) fabricated on a 200 mm Si substrate. For a 29 µm diameter PD capped with a 54 µm diameter ML, its dark current, responsivity, 3 dB bandwidth (BW), and effective aperture size at −3 V bias and 850 nm wavelength are measured to be 138 nA, 0.6 A/W, 21.4 GHz, and 54 µm, respectively. The enlarged aperture size significantly decouples the tradeoff between aperture size and BW and enhances the optical fiber misalignment tolerance from ±5 µm to ±15 µm to ease the module packaging precision. The sensitivity of the photo-receiver is measured to be −9.2 dBm at 25.78 Gb/s with a bit error rate of 10⁻¹² using non-return-to-zero (NRZ) transmission. Reliability tests are performed, and the results show that the fabricated Ge PDs integrated with polymer MLs pass the GR-468 reliability assurance standard. The demonstrated photo-receiver, a first of its kind to the best of our knowledge, features decent performance, high yield, high throughput, low cost, and compatibility with complementary metal-oxide-semiconductor (CMOS) fabrication processes, and may be further applied to 400 Gb/s pulse-amplitude modulation four-level (PAM4) communication. Full article

We analyze several factors that affect the linear output range of CMOS image sensors, including charge transfer time, reset transistor supply voltage, the capacitance of integration capacitor, the n-well doping of the pinned photodiode (PPD) and the output buffer. The test chips are fabricated with 0.18 μm CMOS image sensor (CIS) process and comprise six channels. Channels B1 and B2 are 10 μm pixels and channels B3–B6 are 20 μm pixels, with corresponding pixel arrays of 1 × 2560 and 1 × 1280 respectively. The floating diffusion (FD) capacitance varies from 10 fF to 23.3 fF, and two different designs were employed for the n-well doping in PPD. The experimental results indicate that optimizing the FD capacitance and PPD design can enhance the linear output range by 37% and 32%, respectively. For larger pixel sizes, extending the transfer gate (TG) sampling time leads to an increase of over 60% in the linear output range. Furthermore, optimizing the design of the output buffer can alleviate restrictions on the linear output range. The lower reset voltage for noise reduction does not exhibit a significant impact on the linear output range. Furthermore, these methods can enhance the linear output range without significantly amplifying the readout noise. These findings indicate that the linear output range of pixels is not only influenced by pixel design but also by operational conditions. Finally, we conducted a detailed analysis of the impact of PPD n-well doping concentration and TG sampling time on the linear output range. This provides designers with a clear understanding of how nonlinearity is introduced into pixels, offering valuable insight in the design of highly linear pixels. Full article