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Micromachines
Special Issues
Optoelectronic Integration Devices and Their Applications
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Optoelectronic Integration Devices and Their Applications

A special issue of Micromachines (ISSN 2072-666X). This special issue belongs to the section "A1: Optical MEMS and Photonic Microsystems".

Deadline for manuscript submissions: 31 May 2026 | Viewed by 1689

Special Issue Editor

Prof. Dr. Binfeng Yun

E-Mail Website
Guest Editor
School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China
Interests: optoelectronic integration; optical communication and sensing; microwave photonic technology; micro/nano photonic technology

Special Issue Information

Dear Colleagues,

Over the past few decades, optoelectronic integration technology has seen significant advancements and found extensive applications in areas such as optical communication, optical sensing, optical computing, and microwave photonics, amongst others. Integration platforms such as InP, SiO2, Si3N4, SOI, and Polymer have progressively matured, leading to the emergence of a wide range of integrated photonic devices. Furthermore, some novel materials—such as LNOI, two-dimensional materials, and phase-change materials—have also garnered significant attention from the community due to their outstanding properties. In addition, focus on meta-surfaces and topological structure has stimulated the functional expansion of photonic integration. Moreover, inverse design and artificial intelligence (AI) have provided new design methods for integrated photonic components. The development of heterogeneous/heterogeneous integration technologies has provided a feasible approach for high-performance optoelectronic integrated systems. Accordingly, this Special Issue seeks to showcase research papers and review articles that focus on novel integrated photonic/optoelectronic devices and their applications in various scenarios.

We look forward to receiving your submissions.

Prof. Dr. Binfeng Yun
Guest Editor

Manuscript Submission Information

Manuscripts should be submitted online at www.mdpi.com by registering and logging in to this website. Once you are registered, click here to go to the submission form. Manuscripts can be submitted until the deadline. All submissions that pass pre-check are peer-reviewed. Accepted papers will be published continuously in the journal (as soon as accepted) and will be listed together on the special issue website. Research articles, review articles as well as short communications are invited. For planned papers, a title and short abstract (about 250 words) can be sent to the Editorial Office for assessment.

Submitted manuscripts should not have been published previously, nor be under consideration for publication elsewhere (except conference proceedings papers). All manuscripts are thoroughly refereed through a single-blind peer-review process. A guide for authors and other relevant information for submission of manuscripts is available on the Instructions for Authors page. Micromachines is an international peer-reviewed open access monthly journal published by MDPI.

Please visit the Instructions for Authors page before submitting a manuscript. The Article Processing Charge (APC) for publication in this open access journal is 2100 CHF (Swiss Francs). Submitted papers should be well formatted and use good English. Authors may use MDPI's English editing service prior to publication or during author revisions.

Keywords

  • optoelectronic integration
  • integrated optical signal processing
  • integrated photonic sensing
  • integrated microwave photonics
  • integrated optical computing

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Published Papers (2 papers)

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Research

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14 pages, 3704 KB  
Article
Research on Low Numerical Aperture 808 nm Fiber-Coupled Semiconductor Laser
by Fei Lin, Qi Wu, Wei Luo, Yishui Lin, Zhaoxuan Zheng, Mingkun Yuan, Qizhi Zhang, Maodong Hu, Dongxin Xu, Guojun Liu and Yi Qu
Micromachines 2026, 17(3), 285; https://doi.org/10.3390/mi17030285 - 25 Feb 2026
Viewed by 517
Abstract
This article investigates fiber coupling techniques for low numerical aperture 808 nm semiconductor lasers. A coupling optical system combining fast-axis/slow-axis collimators (FAC/SAC) with a focusing lens was designed, achieving efficient coupling through high-precision optical integration packaging. First, a high-power GaAs-based 808 nm semiconductor [...] Read more.
This article investigates fiber coupling techniques for low numerical aperture 808 nm semiconductor lasers. A coupling optical system combining fast-axis/slow-axis collimators (FAC/SAC) with a focusing lens was designed, achieving efficient coupling through high-precision optical integration packaging. First, a high-power GaAs-based 808 nm semiconductor laser chip was designed and fabricated. Its thermal performance and operational stability were enhanced by optimizing packaging materials and structures. The coupling system employs a fast-axis collimating lens, slow-axis collimating lens, and aspheric focusing lens to shape the beam and focus it into a 200 μm/0.12 NA fiber. Experimental results show that the developed coupling module achieves the threshold current of 1.2 A at 298 K, the continuous output power of 9.59 W, with the slope efficiency of 1.1 W/A, a coupling efficiency of 95%, the maximum output numerical aperture of 0.116, the wavelength temperature drift coefficient of approximately 0.2 nm/°C, and the peak brightness of 0.72 MW/cm2·sr. This study validates the feasibility and superiority of the FAC/SAC combined with focusing lens approach for low-NA fiber coupling. It provides theoretical and practical foundations for fiber coupling in high-brightness, high-power laser systems, offering promising applications in solid-state laser pumping, enhancing system integration, and enabling long-distance, high-brightness transmission. Full article
(This article belongs to the Special Issue Optoelectronic Integration Devices and Their Applications)
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Review

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38 pages, 681 KB  
Review
Reduction in Dark Current in Photodiodes: A Review
by Alper Ülkü, Ralph Potztal, Tobias Blaettler, Cengiz Tuğsav Küpçü, Reto Besserer, Dietmar Bertsch, Tina Strüning and Samuel Huber
Micromachines 2026, 17(4), 458; https://doi.org/10.3390/mi17040458 - 8 Apr 2026
Viewed by 840
Abstract
Dark current represents a fundamental limiting factor in photodiode performance, establishing the noise floor and constraining detectivity in low-light applications. This comprehensive literature review examines publications covering the physical mechanisms underlying dark current generation and diverse techniques employed for its reduction. Covered mechanisms [...] Read more.
Dark current represents a fundamental limiting factor in photodiode performance, establishing the noise floor and constraining detectivity in low-light applications. This comprehensive literature review examines publications covering the physical mechanisms underlying dark current generation and diverse techniques employed for its reduction. Covered mechanisms include diffusion current, Shockley–Read–Hall (SRH) generation–recombination, trap-assisted tunneling, band-to-band tunneling, and surface leakage, each examined with respect to its physical origin and characteristic signatures. Reduction strategies are categorized into thermal management approaches, surface passivation techniques including atomic-layer-deposited aluminum oxide (ALD Al2O3), guard ring architectures (attached, floating, and combined configurations), gettering and defect engineering methods, doping profile optimization, bias voltage management, and advanced device architectures such as pinned photodiodes and black silicon structures. A classification table organizes all the reviewed literature by material system, reduction technique, and key findings. Special emphasis is placed on silicon, germanium, III–V compounds, and emerging material photodiodes relevant to near-infrared detection, CMOS imaging, single-photon avalanche diodes (SPADs), and Time-of-Flight (ToF) applications. Full article
(This article belongs to the Special Issue Optoelectronic Integration Devices and Their Applications)
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